Diodes ES3A, ES3AB, ES3D, ES3DB User Manual

Features
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Surge Overload Rating to 100A Peak
Ideally Suited for Automated Assembly
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Top View
Green
ES3A/AB - ES3D/DB
3.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Mechanical Data
Case: SMB/SMC
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMB Weight: 0.093 grams (approximate)
SMC Weight: 0.21 grams (approximate)
Bottom View
Ordering Information (Note 3)
Part Number Case Packaging
ES3x-13-F SMC 3000/Tape & Reel
ES3xB-13-F SMB 3000/Tape & Reel
* x = Device type, e.g. ES3A-13-F (SMC package); ES3AB-13-F (SMB package). Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ES3A/AB - ES3D/DB
Document number: DS14003 Rev. 15 - 2
YWW
ES3x(B)
ES3x = Product type marking code, ex: ES3A (SMC package) ES3xB = Product type marking code, ex: ES3AB (SMB package)
= Manufacturers’ code marking YWW = Date code marking Y = Last digit of year (ex: 2 for 2002) WW = Week code (01 to 53)
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)
RAG
R
C
T
F
C
URRENT
NSTAN
T
N
O
US F
O
R
RD C
URREN
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol ES3A/AB ES3B/BB ES3C/CB ES3D/DB Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
V V
DC Blocking Voltage (Note 4) RMS Reverse Voltage
V
R(RMS
Average Rectified Output Current @ TT = 100°CIO Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
I
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal
Typical Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
R
R
T
J, TSTG
RRM RWM
V
R
FSM
JT
θ
JA
θ
ES3A/AB - ES3D/DB
50 100 150 200 V
35 70 105 140 V
3.0 A
100 A
10
50
-55 to +150
°C/W
°C
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Maximum Forward Voltage @ IF = 3.0A VFM Peak Reverse Current @ TA = 25°C
at Rated DC Blocking Voltage (Note 4) @ TA = 125°C Maximum Reverse Recovery Time (Note 6)
Typical Total Capacitance (Note 7)
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Unit mounted on PC board with 5.0 mm
6. Measured with I
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
= 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
F
2
(0.013 mm thick) copper pads as heat sink.
IRM
trr
CT
4
Note 3
(A)
3
IED
2
I E
E
1
(A)
WA
E A
10
1.0
0.1
0.9 V 10
500
25 ns
45 pF
μA
O
I, AVE
0
25 75
50 125 150 175
T , TERMINAL TEMPERATURE ( C)
T
Fig. 1 Forward Current Derating Curve
100
°
F
I, I
0.01 0 0.4 0.8 1.2 1.6
V , INSTANT ANEO US FORWARD VOLTAGE (V)
F
Fig. 2 Typi cal Forward C haracter istics
ES3A/AB - ES3D/DB
Document number: DS14003 Rev. 15 - 2
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www.diodes.com
November 2010
© Diodes Incorporated
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