Diodes ES1A, ES1G User Manual
Features
• Glass Passivated Die Construction
• Super-Fast Recovery Time For High Efficiency
• Surge Overload Rating to 30A Peak
• Ideally Suited for Automated Assembly
• Lead Free Finish/RoHS Compliant (Note 1)
• Green Molding Compound (No Halogen and Antimony)
(Note 2)
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Green
ES1A - ES1G
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Mechanical Data
• Case: SMA
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Lead Free Plating (Matte Tin Finish) Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band or Cathode Notch
• Weight: 0.064 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
ES1x-13-F SMA 5000/Tape & Reel
* x = Device type, e.g. ES1A-13-F
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
3. For packaging details, go to our website at http://www.diodes.com.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
Marking Information
ES1A - ES1G
Document number: DS14001 Rev. 16 - 2
YWW
ES1x
ES1x = Product type marking code, ex. ES1A
= Manufacturer’s code marking
YWW = Date code marking
Y = Last digit of year (ex: 2 for 2002)
WW = Week code (01 to 53)
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November 2011
© Diodes Incorporated
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θ
r
R
G
REC
T
F
C
U
R
R
T
N
TAN
TAN
O
US F
O
R
RD CUR
REN
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol ES1A ES1B ES1C ES1D ES1G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
V
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
V
R(RMS
Average Rectified Output Current @ TT = 110°CIO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 4)
Operating and Storage Temperature Range
RRM
RWM
V
R
FSM
T
R
JT
J, TSTG
ES1A - ES1G
50 100 150 200 400 V
35 70 105 140 280 V
1.0 A
30 A
25
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol ES1A ES1B ES1C ES1D ES1G Unit
= 0.6A
I
Maximum Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Maximum Reverse Recovery Time (Note 6)
Typical Total Capacitance (Note 7)
Notes: 4. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
5. Short duration pulse test used to minimize self-heating effect.
6. Measured with I
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
= 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
F
F
I
= 1.0A
F
T
= 25°C
A
= 125°C
T
A
V
FM
I
RM
t
r
C
T
1.5
Note 5
(A)
EN
1.0
IED
I
0.5
E
A
(A)
WA
E
10
1.0
0.1
0.90
0.92
5.0
200
⎯
1.25
V
μA
25 ns
20 pF
O
I, AVE
0
25 50 75 100 125 150 175
T , TERMINAL TEMPERATURE ( C)
T
°
Fig. 1 Forward Current Derating Curve
S
F
I, I
0.01
0 0.4 0.8 1.2 1.6
V , INSTANTANE OUS FO RWARD V OLT AGE (V )
F
Fig. 2 Typical Forward Characteristics
ES1A - ES1G
Document number: DS14001 Rev. 16 - 2
2 of 4
www.diodes.com
November 2011
© Diodes Incorporated
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