Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZTA42)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
PNP SURFACE MOUNT TRANSISTOR
4
SOT - 223
E
3
2
C
4
O
P
T
C
B
1
W
E
I
V
Schematic and Pin Configuration
DZTA92
3
2
1
COLLECTOR
2,4
1
BASE
3
EMITTE
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
B
I
C
-300 V
-300 V
-5 V
-100 mA
-500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ T
Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3)
Operating and Storage Temperature Range
= 25°C (Note 3) P
A
d
R
JA
θ
T
, T
j
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-300
-300
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.25
-0.1
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
V
CE(SAT)
V
BE(SAT)
h
⎯ ⎯
⎯ ⎯
25
FE
40
25
⎯ ⎯ I
⎯ ⎯ I
⎯ ⎯
-0.5 V
-0.9 V
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at
4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%
f
T
C
obo
http://www.diodes.com/datasheets/ap02001.pdf.
50
⎯ ⎯
⎯ ⎯
6 pF
1 W
125
-55 to +150
V
I
= -100μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -100μA, IC = 0
μA
μA
E
VCB = -200V, IE = 0
VEB = -3V, IC = 0
IC = -20mA, IB = -2mA
IC = -20mA, IB = -2mA
= -1mA, VCE = -10V
C
V
MHz
= -10mA, VCE = -10V
C
I
= -30mA, VCE = -10V
C
I
= -10mA, VCE = -20V, f = 100MHz
C
VCB = -20V, f = 1MHz
ο
C/W
°C
DS30521 Rev. 4 - 2
1 of 4
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DZTA92