Diodes DZT5551 User Manual

Features

• BV

• BV

• I

• Low Saturation Voltage (150mV max @10mA)

• h

• Complementary PNP Type: DZT5401

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 160V

CEO

> 6V

EBO

= 600mA Continuous Collector Current

C

specified up to 50mA for a high gain hold up

FE

Applications

• High Voltage Amplification Applications

• High Voltage Switching

SOT223

Top View

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

• Weight: 0.112 grams (approximate)

Device Schematic

DZT5551

160V NPN VOLTAGE TRANSISTOR IN SOT223

MIL-STD-202, Method 208

Pin-Out Top View

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DZT5551-13 K4N 13 12 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.

Marking Information

DZT5551

Document number: DS31219 Rev. 3 - 2

(Top View)

K4N = Product type marking code

Y

W

W

www.diodes.com

= Manufacturer’s code marking
YWW = Date code marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52

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November 2012

© Diodes Incorporated

θ

θ

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

180 V
160 V

6 V

600 mA

1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range

Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

P

D

R

JA

R

JL

, T

T

J

STG

2 W

62.5 °C/W

34.05 °C/W

-55 to +150 °C

DZT5551

DZT5551

Document number: DS31219 Rev. 3 - 2

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© Diodes Incorporated

Thermal Characteristics and Derating Information

DZT5551

1

V

CE(sat)

Limited

100m

10m

Collect o r Cu rr e nt (A)

C

I

Single Pulse

T

50mmx50mmx1.6mm
1oz Copper

1m

DC

1s

100ms

amb

=25°C

10ms

1ms

100µs

1 10 100

VCE Collector-Emitter Voltage (V)

Safe Operating Area

70

T

=25°C

60
50
40
30
20
10

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (° C /W)

amb

50mmx50mmx1.6mm

1oz Copper

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

0

Pulse Width (s)

2.00

1.75

1.50

1.25

50mmx50mmx1.6mm
1oz Copper

1.00

0.75

0.50

0.25

0.00

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Dera ting C urv e

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse
T

=25°C

amb

50mmx50mmx1.6mm

1oz Copper

Transient Thermal Impedance

DZT5551

Document number: DS31219 Rev. 3 - 2

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www.diodes.com

Pulse Power Dissipation

November 2012

© Diodes Incorporated