Diodes DZT3150 User Manual
R
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
NEW PRODUCT
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
•
Weight: 0.115 grams (approximate)
DZT3150
NPN SURFACE MOUNT TRANSISTOR
3
2
1
4
SOT-223
3
E
2
4
C
O
P
T
C
1
B
W
E
I
V
Schematic and Pin Configuration
BASE
COLLECTOR
2,4
1
3
EMITTE
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Note: 1. No purposefully added lead.
4. Device mounted on Polyimide PCB with a copper area of 1.8cm
DS30785 Rev. 4 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
R
θJA
T
, T
j
STG
V
(BR)CEO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
f
T
C
obo
2.
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25
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
250
150
50
⎯
⎯ ⎯
⎯ ⎯
0.35
0.50 V V
1.10
1.40 V V
⎯
150
50 V
25 V
7.0 V
5.0 A
1.0 A
1 (Note 3)
2 (Note 4)
125 (Note 3)
62.5 (Note 4)
-55 to +150 °C
V
IC = 10mA, IB = 0
1.0
1.0
500
⎯
⎯
⎯
50 pF
μA
VCB = 50V, IE = 0
μA
VEB = 7.0V, IC = 0
I
= 3.0A, IB = 150mA
C
= 4.0A, IB = 200mA
I
C
= 3.0A, IB = 150mA
I
C
I
= 4.0A, IB = 200mA
C
IC = 500mA, VCE = 2.0V
⎯
IC = 2.0A, VCE = 2.0V
IC = 5.0A, VCE = 2.0V
= 50mA, V
I
C
MHz
f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
W
°C/W
= 6.0V,
CE
DZT3150
© Diodes Incorporated
Typical Characteristics @T
NEW PRODUCT
R = 125°C
θ
JA
= 25°C unless otherwise specified
amb
I/I = 10
CB
DS30785 Rev. 4 - 2
I/I = 10
CB
2 of 4
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© Diodes Incorporated
DZT3150
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