Diodes DZT2907A User Manual
R
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT2222A)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Amplification and Switching
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-223
NEW PRODUCT
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
4
C
TOP VIEW
DZT2907A
PNP SURFACE MOUNT TRANSISTOR
3
2
1
4
SOT-223
3
E
C
2
B
1
Schematic and Pin Configuration
COLLECTOR
1
BASE
2,4
3
EMITTE
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
-60 V
-60 V
-5 V
-600 mA
-800 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ TA = 25°C P
Power Derating Factor above 25°C (Note 4)
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 4)
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 2” x 2” FR-4 PC board, 2 oz. copper, single sided, pad layout as shown on page 4, or on Diodes Inc. suggested pad
layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on FR-4 PCB, 7cm
2
of copper pad area.
Tj, T
R
d
P
der
STG
JA
θ
1000 (Note 3)
1500 (Note 4)
12
-55 to +150
83.3
mW
mW/°C
°C
ο
C/W
DS30921 Rev. 5 - 2
1 of 4
www.diodes.com
DZT2907A
© Diodes Incorporated
P, P
OWE
R
S
SIP
A
O
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Cutoff Current
Collector Cutoff Current
Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
NEW PRODUCT
DC Current Gain
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< =0.02
I
CBO
I
CEX
I
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(SAT)
h
V
BE(SAT)
C
C
t
t
BL
FE
f
T
obo
ibo
on
t
d
t
off
t
s
t
⎯
⎯
⎯
⎯
-60
-60
-5
⎯
⎯
75
100
100
100 300
50
⎯
⎯
200
⎯
⎯
⎯
⎯
r
⎯
⎯
⎯
f
⎯
-0.01
-10
-50 nA
-50 nA
⎯
⎯
⎯
-0.4 V
-1.6 V
VCB = -50V, IE = 0
μA
VCB = -50V, IE = 0, TA = 150°C
VCE = -30V, V
VCE = -30V, V
V
IC = -10 μA, IE = 0
V
I
C
V
I
E
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯ V
⎯ V
⎯ ⎯ V
-1.3 V
-2.6 V
⎯
MHz
8 pF
30 pF
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
V
VCB = -10V, IE = 0A, f =1MHz
VEB = -2V, IC = 0A, f =1MHz
45 ns
10 ns
VCC = -30V, IC = -150mA, IB1 = -15mA
40 ns
100 ns
80 ns
VCC = -6V, IC = -150mA, IB1 = IB2 = -15mA
30 ns
= -0.5V
EB(OFF)
= -0.5V
EB(OFF)
= -10 mA, IB = 0
= -10 μA, IC = 0
= -10V, IC = -100μA
CE
= -10V, IC = -1mA
CE
= -10V, IC = -10mA
CE
= -10V, IC = -150mA
CE
= -10V, IC = -500mA
CE
= -20V, IC = -50mA, f = 100MHz
CE
Typical Characteristics @T
= 25°C unless otherwise specified
A
1.0
0.8
N (mW)
TI
0.6
DI
0.4
C
D
0.2
0
25
0
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
50
Fig. 1 Power Dissipation vs. Ambient T emperature (Note 3)
150
-I , COLLECTOR CURRENT (A)
0
-V , COLLECTOR EMITTER VOLT A GE (V)
CE
Fig. 2 Typical Collecto r Cu r r ent as a
Function of Collector Emitter Voltage
DS30921 Rev. 5 - 2
2 of 4
www.diodes.com
DZT2907A
© Diodes Incorporated
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