Diodes DZT2222A User Manual

R

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DZT2907A)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Finish - Matte Tin annealed over Copper Leadframe

NEW PRODUCT

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.115 grams (approximate)

NPN SURFACE MOUNT TRANSISTOR

4

SOT-223

3

E

2

C

4

TOP VIEW

Schematic and Pin Configuration

C
B

1

DZT2222A

3

2

1

COLLECTOR

2,4

1

BASE

3

EMITTE

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

I

C

75 V
40 V

6 V

600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @ TA = 25°C (Note 3) P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

R

T

, T

j

θ

d
JA
STG

1 W

125

-55 to +150

°C/W

°C

DS30481 Rev. 5 - 2 1 of 4

www.diodes.com

DZT2222A

© Diodes Incorporated

C

O

C

T

O

R

C

U

R

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cut-Off Current
Emitter Cut-Off Current

Collector-Emitter Cut-Off Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CEX

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

V

BE(SAT)

NEW PRODUCT

DC Current Gain

SMALL SIGNAL CHARACTERISTICS

Transition Frequency
Output Capacitance
Input Capacitance

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Notes: 4. Measured under pulsed conditions. Pulse width = 300 μS. Duty Cycle, d< = 2%.

h

FE

f

T

C

obo

C

ibo

t

d

t

r

t

s

t

f

75
40

6

⎯
⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯

10 nA
10
10 nA
10 nA

0.3 V

1.0 V

V
V
V

μA

0.6 1.2 V

2.0 V

⎯
35
50
75
35

⎯
⎯
⎯
⎯

V

100 300

50
40

300

⎯
⎯

⎯
⎯
⎯
⎯

⎯
⎯

MHz

⎯

8 pF

25 pF

10 ns
25 ns

225 ns

60 ns

I

= 10μA, IE = 0

C

I

= 10mA, IB = 0

C

I

= 10μA, IC = 0

E

V

= 50V, IE = 0

CB

V

= 50V, IE = 0, TA = 150°C

CB

V

= 3V, IC = 0

EB

V

= 60V, V

CE

I

= 150mA, IB = 15mA

C

I

= 500mA, IB = 50mA

C

I

= 150mA, IB = 15mA

C

I

= 500mA, IB = 50mA

C

I

= 0.1mA, VCE = 10V

C

I

= 1mA, VCE = 10V

C

I

= 10mA, VCE = 10V

C

I

= 10mA, VCE = 10V, TA = -55°C

C

I

= 150mA, VCE = 10V

C

I

= 150mA, VCE = 1V

C

I

= 500mA, VCE = 10V

C

I

= 20mA, VCE = 20V, f = 100MHz

C

V

= 10V, IE = 0, f = 1MHz

CB

V

= 0.5V, IC = 0, f = 1MHz

EB

= 30V, V

V

CE

= 30V, IC = 150mA, IB1 = I

V

CE

= 3V

EB(off)

= 0.5V, IC = 150mA, IB1= 15mA

EB(off)

= 15mA

B2

(A)

LLE

C

I,

R = 125°C/W

θ

JA

V , COLLECTOR EMITTER VOLTAGE (V)

CE

DS30481 Rev. 5 - 2 2 of 4

www.diodes.com

DZT2222A

© Diodes Incorporated