Diodes DZQA6V8AXV5 User Manual

Features
Quad TVS in Common Anode Configuration
Ultra-Small Surface Mount Package
Ideal For Transient Suppression and ESD Protection
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Capability
IEC 61000-4-2 Contact Method ±8kV
IEC 61000-4-2 Air Discharge Method ±15kV
Mechanical Data
Case: SOT553
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish: Matte Tin, Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.002 grams (approximate)
A1/A2 A3/A4
C2 C1
321
D2
D3
C3
TOP VIEW
Device Schematic
D1
D4
54
C4
DZQA6V8AXV5
QUAD SURFACE MOUNT TVS ARRAY
Ordering Information (Note 3)
Part Number Case Packaging
DZQA6V8AXV5-7 SOT553 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DZQA6V8AXV5
Document number: DS31271 Rev. 6 - 2
T62
YMYM
www.diodes.com
T62 = Product type marking code YM = Date code marking Y = Year (Ex: W = 2009) M = Month (ex: 9 = September)
1 of 4
February 2011
© Diodes Incorporated
p
θ
P
P
U
RATING
O
DZQA6V8AXV5
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Notes 4 & 5) Peak Power Dissipation, 8x20μS Waveform (Note 6) Thermal Resistance, Junction-to-Ambient (Note 4) Operating and Storage Temperature Range
P
P
R
T
J, TSTG
D
k
JA
Electrical Characteristics @T
Breakdown Voltage
Type
Number
Marking
Code
Min (V) Nom (V) Max (V)
= 25°C unless otherwise specified
A
Leakage Current
(Note 7)
V
@ IT = 1mA IRM @ VRM V
BR
(Note 7)
Max(μA)
(V)
Clamping
Voltage (Note 6)
Max @ IPP C
C
(V) IPP(A)
V
C
DZQA6V8AXV5 T62 6.47 6.8 7.14 1 4.3 13 1.6 12.5 15 7.6 9.5
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001, which can be found on our website at http://www.diodes.com.
5. Only 1 diode under power. For all 4 diodes under power, P
6. Non-repetitive current pulse per Figure 3 and derate above T
7. Short duration pulse test used to minimize self-heating effect.
8. Per element, f = 1MHz, T
= 25°C
A
will be 25% of the listed value.
D
= 25°C per Figure 1.
A
100
380 mW
20 W
327 °C/W
-55 to +150
Capacitance
@0V Bias(pF)
(Note 8)
C
T
°C
Capacitance
@3V Bias(pF)
(Note 8)
T
Typ Max Typ Max
F
100
75
IN %
50
50
LSE DE
25
PEAK POWER OR CURRENT
EAK
PppP
I , PEAK PULSE CURRENT (%I )
0
0 25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Pulse Derating Curve
0
0
20 40
t, TIME ( s)
μ
Fig. 2 Pulse Waveform
60
DZQA6V8AXV5
Document number: DS31271 Rev. 6 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
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