Features and Benefits
• BV
• I
• 47% smaller than SOT223; 60% smaller than TO252 (D-PAK)
• Profile height just 1.1mm for thin application
• R
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
> -500V
CEO
= -150mA Continuous Collector Current
C
efficient giving high PD rating up to 2.8W
JA
θ
PowerDI
Top View
5
Bottom View
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DXTP560BP5
500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
POWERDI
®
5
Mechanical Data
• Case: POWERDI®5
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.093 grams (approximate)
Applications
• Gate driver
• Startup switch in offline lighting
• Motor Control
C
B
E
Device Schematic
Top View
Pin-Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DXTP560BP5-13 DXTP560B 13 16 5,000
Notes: 1. No purposefully added lead.
2. Diodes Inc‘s “Green” Policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
DXTP560B
YYWWK
POWERDI is a registered trademark of Diodes Incorporated.
DXTP560BP5
Datasheet Number: DS35054 Rev: 1 - 2
DXTP560B = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 10 for 2010)
WW = Week code (01 - 53)
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DXTP560BP5
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
-500
-500
-7
-150
-500
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
(Note 4)
Power Dissipation
Linear Derating Factor
ADVANCE INFORMATION
(Note 5)
(Note 6)
P
D
(Note 4)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Notes: 4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
5. Same as note (4), except the device is mounted on 25mm x 25mm 1oz copper.
6. Same as note (4), except the device is mounted on a minimum recommended pad layout of 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
(Note 5) 96
(Note 6) 179
R
JA
θ
R
JL
, T
T
J
STG
2.8
22.4
1.3
10.4
0.7
5.6
45
14 °C/W
-55 to +150 °C
V
mA
W
mW/°C
°C/W
POWERDI is a registered trademark of Diodes Incorporated.
DXTP560BP5
Datasheet Number: DS35054 Rev: 1 - 2
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January 2011
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Thermal Characteristics
1
V
CE(sat)
Limited
100m
10m
50mm x 50mm 2oz Cu
T
Collector Current (A)
C
I
amb
Single Pulse
1m
10m 100m 1 10 100
VCE Collector-Emitter Voltage (V)
ADVANCE INFORMATION
DC
1s
100ms
10ms
=25°C
Safe Operating Area
1ms
100µs
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DXTP560BP5
3.0
50mm x 50mm
2.5
2.0
1.5
2oz Cu
25mm x 25mm
1oz Cu
Minimum Recommended
Pad layout 1oz Cu
1.0
0.5
0.0
0 20 40 60 80 100 120 140 160
Max Po we r Dissipat ion (W)
Temperature (°C)
Derating Curve
50mm x 50mm 2oz Cu
40
T
=25°C
amb
30
D=0.5
20
D=0.2
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resista n ce (°C/W)
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
100
50mm x 50mm 2oz Cu
T
=25°C
amb
Single Pulse
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
POWERDI is a registered trademark of Diodes Incorporated.
DXTP560BP5
Datasheet Number: DS35054 Rev: 1 - 2
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January 2011
© Diodes Incorporated