Diodes DXTP19020DP5 User Manual
A
f
Features
• 43% smaller than SOT223; 60% smaller than TO252
• Maximum height just 1.1mm
• Rated up to 1.3W
• V
• I
• Low Saturation voltage, high gain transistor
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
= -20V
CEO
= -8A; ICM = -15A
C
Applications
• Load disconnect switch
• Battery charging
ADVANCE INFORMATION
Top View Bottom View Pin-out diagram
Product Line o
Diodes Incorporated
DXTP19020DP5
20V PNP HIGH GAIN TRANSISTOR
PowerDI
Mechanical Data
• Case: PowerDI®5
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.093 grams (approximate)
C
BE
Device Schematic
®
5
Ordering Information (Note 3)
Part Number Case Packaging
DXTP19020DP5-13 PowerDI®5 5000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PowerDI is a registered trademark of Diodes Incorporated.
DTP1920D
YYWWK
DXTP19020DP5
Document number: DS32012 Rev. 3 - 2
DTP1920D = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 09 for 2009)
WW = Week code (01 to 53)
1 of 5
www.diodes.com
March 2010
© Diodes Incorporated
A
f
θ
θ
(BR)
(BR)
(BR)
(BR)
)
)
r
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ TA = 25°C (Note 4) PD
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C
Power Dissipation @ TA = 25°C (Note 5) PD
Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25°C
Operating and Storage Temperature Range
ADVANCE INFORMATION
Notes: 4. Device mounted on FR-4 PCB, 2 oz. copper, minimum recommended pad layout.
5. Device mounted on FR-4 PCB, 2 oz. copper, collector pad dimensions 0.42inch
Product Line o
Diodes Incorporated
DXTP19020DP5
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
B
I
CM
R
JA
R
JA
T
, T
J
STG
2
.
-25 V
-20 V
-4 V
-7 V
-8 A
-1 A
-15 A
1.3 W
96.1 °C/W
3 W
41.7 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Collector Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
DC Current Gain (Note 6)
Transition Frequency
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 6. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
V
V
V
(BR)ECX
V
V
I
CBO
I
EBO
V
CE(sat)
V
BE(sat
V
BE(on
h
C
C
f
t
t
FE
T
ibo
obo
d
t
s
t
f
-25 -55
CBO
-20 -50
CEO
-4 -8.6
ECO
EBO
-4 -8.6
-7 -8.2
⎯
⎯
⎯
⎯
⎯
300
200
45
⎯
⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
nA
μA
<1
⎯
⎯
⎯
⎯
⎯
⎯
50
0.5
<1 -50 nA
-40
-97
-115
-220
-47
-130
-145
-275
mV
-1050 -1150 mV
-930 -1000 mV
450
290
70
25
176
900
⎯
⎯
⎯
⎯
⎯
MHz
400 pF
36 45 pF
23
18.4
266
49.6
⎯
⎯
⎯
⎯
ns
I
= -100μA
C
I
= -10mA
C
= -100μA, RBC < 1kΩ or
I
E
0.25V > V
= -100μA
I
E
= -100μA
I
E
V
CB
V
CB
CB
= -25V
= -25V, T
> -0.25V
= 100 °C
amb
VEB = -5.6V
I
= -1A, IB = -100mA
C
= -1A, IB = -10mA
I
C
I
= -2A, IB = -40mA
C
= -8A, IB = -800mA
I
C
IC = -8A, IB = -800mA
IC = -8A, VCE = -2V
I
= -100mA, VCE = -2V
C
I
= -2A, VCE = -2V
C
IC = -8A, VCE = -2V
I
= -15A, VCE = -2V
C
I
= -50mA, V
C
= -10V,
CE
f = 50MHz
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
= -1A, VCC = -10V,
I
C
I
= -IB2 = -50mA
B1
PowerDI is a registered trademark of Diodes Incorporated.
DXTP19020DP5
Document number: DS32012 Rev. 3 - 2
2 of 5
www.diodes.com
March 2010
© Diodes Incorporated
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