Diodes DXTA92 User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXTA42)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
DXTA92
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
O
R
T
L
L
C
E
C
O
3
E
C
4
C
O
T
2
B
1
W
E
I
V
P
B
Schematic and Pin Configuration
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
V
CE(SAT)
V
BE(SAT)
h
FE
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
T
-300
-300
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
25
40
25
50
⎯ ⎯
C
D
R
JA
θ
, T
j
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.25
-0.1
-0.5 V
-0.9 V
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
-300 V
-300 V
-5 V
-500 mA
1 W
125 °C/W
-55 to +150 °C
V
I
= -100μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -100μA, IC = 0
E
μA
V
= -200V, IE = 0
CB
μA
VEB = -3V, IC = 0A
I
= -20mA, IB = -2mA
C
I
= -20mA, IB = -2mA
C
= -1mA, VCE = -10V
I
C
V
I
= -10mA, VCE = -10V
C
= -30mA, VCE = -10V
I
C
= -10mA, VCE = -20V,
I
C
MHz
f = 100MHz
6 pF
V
= -20V, f = 1MHz
CB
DS31159 Rev. 4 - 2
1 of 4
www.diodes.com
DXTA92
© Diodes Incorporated
NEW PRODUCT
R = 125°C
θ
JA
DS31159 Rev. 4 - 2
2 of 4
www.diodes.com
© Diodes Incorporated
DXTA92
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