Diodes DXTA42 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXTA92)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Top View
= 25°C unless otherwise specified
A
C
Device Schematic
DXTA42
NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 54.8mg (approximate)
C
3
E
2
4
O
P
T
C
1
B
W
E
I
V
V
CBO
V
CEO
V
EBO
I
C
1
S
A
B
Pin Out Configuration
300 V
300 V
6 V
500 mA
T
O
R
L
L
C
E
O
2,4
E
3
E
T
I
M
T
E
R
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 1. No purposefully added lead.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DXTA42
Document number: DS31158 Rev. 4 - 2
Characteristic Symbol Min Typ Max Unit Test Conditions
= 25°C unless otherwise specified
A
V
V
V
I
I
V
CE(SAT
V
BE(SAT
CBO
CEO
EBO
CBO
EBO
300
300
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
25
h
FE
f
T
C
obo
40
40
50
⎯ ⎯
1 of 4
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1 W
R
JA
, T
T
J
STG
⎯ ⎯
⎯ ⎯
6
⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯
125 °C/W
-55 to +150 °C
V
I
= 100μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 100μA, IC = 0
0.1
0.1
0.5 V
0.9 V
3 pF
E
μA
μA
= 200V, IE = 0
V
CB
= 6V, IC = 0
V
EB
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
= 1mA, VCE = 10V
I
C
I
= 10mA, VCE = 10V
C
= 30mA, VCE = 10V
I
C
= 10mA, VCE = 20V,
I
C
MHz
f = 100MHz
VCB = 20V, f = 1MHz
December 2009
© Diodes Incorporated
DXTA42
R = 125°C
θ
JA
0.5
0.4
0.3
0.2
SATURATION VOLTAGE (V)
0.1
CE(SAT)
V , COLLEC TOR-E M I TTER
0
0.01 0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Collector-Emitter Saturation Voltage
vs. Collector Current
DXTA42
Document number: DS31158 Rev. 4 - 2
2 of 4
www.diodes.com
December 2009
© Diodes Incorporated
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