Diodes DXT751 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary
• Ideally
• Ideal for Medium Pow
• Lead Free By
• "Green" Dev
Suited for Automated Assembly Processes
NPN Type Available (DXT651)
er Switching or Amplification Applications
Design/RoHS Compliant (Note 1)
ice (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL F
lammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
: Level 1 per J-STD-020C
LOW V
CE(SAT)
4
C
T
DXT751
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
T
O
R
L
L
C
E
C
O
3
E
2
C
1
B
W
E
I
V
O
P
Schematic and Pin Configuration
B
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DS31185 Rev. 3 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
www.
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
T
, T
J
1 of 4
diodes.com
-80 V
-60 V
-5 V
-3 A
-6 A
D
JA
θ
STG
1 W
125 °C/W
-55 to +150 °C
© Diodes Incorporated
DXT751
P
P
OWER
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-80
-60
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
NEW PRODUCT
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
100
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
Switching Times
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
t
on
t
off
100 145
1.0
⎯ ⎯
⎯ ⎯
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
70
-0.08
-0.2
-0.9 -1.25 V
-0.8 -1 V
200
180
80
40
160
140
⎯ ⎯
⎯
⎯
45
200
V
I
V
I
V
I
-0.1
-10
-0.1
-0.3
-0.6
μA
μA
μA
V
V
V
V
I
I
I
V
⎯
MHz
ns
ns
V
V
V
V
V
V
I
I
⎯
300
⎯
⎯
⎯
30 pF
⎯
⎯
= -100μA, IE = 0
C
= -10mA, IB = 0
C
= -100μA, IC = 0
E
= -60V, IE = 0
CB
= -60V, IE = 0, TA = 100°C
CB
= -4V, IC = 0
EB
= -1A, IB = -100mA
C
= -3A, IB = -300mA
C
= -1A, IB = -100mA
C
= -2V, IC = -1A
CE
= -2V, IC = -50mA
CE
= -2V, IC = -500mA
CE
= -2V, IC = -1A
CE
= -2V, IC = -2A
CE
= -10V, IC = -50mA, f = 100MHz
CE
= -10V, f = 1MHz
CB
= -500mA, VCC = -10V
C
= IB2 = -50mA
B1
0.8
N (W)
0.6
DISSI
0.4
,
D
0.2
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation
vs. Ambien t T empe rature (Note 3)
°
01 23 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DS31185 Rev. 3 - 2
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© Diodes Incorporated
DXT751
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