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Features
• Epitaxial Planar Die Construction
• Complementary
• Ideally
• Ideal for Medium Pow
• Lead Free By
• "Green" Dev
Suited for Automated Assembly Processes
NPN Type Available (DXT651)
er Switching or Amplification Applications
Design/RoHS Compliant (Note 1)
ice (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL F
lammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
: Level 1 per J-STD-020C
LOW V
CE(SAT)
4
C
T
DXT751
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
T
O
R
L
L
C
E
C
O
3
E
2
C
1
B
W
E
I
V
O
P
Schematic and Pin Configuration
B
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DS31185 Rev. 3 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
www.
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
T
, T
J
1 of 4
diodes.com
-80 V
-60 V
-5 V
-3 A
-6 A
D
JA
θ
STG
1 W
125 °C/W
-55 to +150 °C
© Diodes Incorporated
DXT751
Page 2
P
P
OWER
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
-80
-60
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
NEW PRODUCT
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
100
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
Switching Times
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
t
on
t
off
100 145
1.0
⎯ ⎯
⎯ ⎯
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
70
-0.08
-0.2
-0.9 -1.25 V
-0.8 -1 V
200
180
80
40
160
140
⎯ ⎯
⎯
⎯
45
200
V
I
V
I
V
I
-0.1
-10
-0.1
-0.3
-0.6
μA
μA
μA
V
V
V
V
I
I
I
V
⎯
MHz
ns
ns
V
V
V
V
V
V
I
I
⎯
300
⎯
⎯
⎯
30 pF
⎯
⎯
= -100μA, IE = 0
C
= -10mA, IB = 0
C
= -100μA, IC = 0
E
= -60V, IE = 0
CB
= -60V, IE = 0, TA = 100°C
CB
= -4V, IC = 0
EB
= -1A, IB = -100mA
C
= -3A, IB = -300mA
C
= -1A, IB = -100mA
C
= -2V, IC = -1A
CE
= -2V, IC = -50mA
CE
= -2V, IC = -500mA
CE
= -2V, IC = -1A
CE
= -2V, IC = -2A
CE
= -10V, IC = -50mA, f = 100MHz
CE
= -10V, f = 1MHz
CB
= -500mA, VCC = -10V
C
= IB2 = -50mA
B1
0.8
N (W)
0.6
DISSI
0.4
,
D
0.2
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation
vs. Ambien t T empe rature (Note 3)
°
01 23 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DS31185 Rev. 3 - 2
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diodes.com
© Diodes Incorporated
DXT751
Page 3
400
0.3
350
300
250
200
150
100
50
0
NEW PRODUCT
-I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical DC Current Gain
vs. Collector Current
0.25
0.2
0.15
0.1
0.05
0
-I COLLECTOR CURRENT (A)
,
C
Fig. 4 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
Fig. 5 Typical Base-Emitter Turn-On Voltage
400
350
300
250
200
150
100
50
0
DS31185 Rev. 3 - 2
-I COLLECTOR CURRENT (A)
,
C
vs. Collector Current
,
V REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
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diodes.com
-I COLLECTOR CURRENT (A)
,
C
Fig. 6 Typical Base-Emitter Saturation
Voltage vs. Collector Current
200
150
100
V = -10V
50
0
T
0102030405060708090100
f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
-I , COLLECTOR CURRENT (mA)
C
CE
f = 100MHz
Fig. 8 Typic al G ain-Bandw idth Pro duct vs. Coll ector Cur r ent
© Diodes Incorporated
DXT751
Page 4
Ordering Information (Note 5)
Device Packaging Shipping
DXT751-13 SOT89-3L 2500/Tape & Reel
Notes: 5. For packaging details , go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
0
0
2
.
0
(Top View)
L
A
KP2
YWW
KP2 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
C
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
H
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
Package Outline Dimensions
NEW PRODUCT
D1
R
E
B1
8
B
°
(
4
X
)
e
D
Suggested Pad Layout
0.4
0.9
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
1.7
3.0
1.9
2.7
1.3
Unit: mm
IMPORTANT NOTICE
LIFE SUPPORT
DS31185 Rev. 3 - 2
4 of 4
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© Diodes Incorporated
DXT751
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