Diodes DXT651 User Manual

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DXT651

60V NPN LOW VCE(sat) TRANSISTOR IN SOT89

Features

 BV  I  Low saturation voltage V  Complementary PNP Type: DXT751  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

> 60V

CEO

= 3A high Continuous Current

CE(sat)

SOT89

< 300mV @ 1A

Top View Device Symbol

Mechanical Data

 Case: SOT89  Case material: Molded Plastic. “Green” Molding Compound.  UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.052 grams (Approximate)

Top View

Pinout

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DXT651-13 KN2 13 12 2,500

DXT651-13R KN2 13 12 4,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DXT651

Document Number: DS31184 Rev: 5 - 2

KN2

www.diodes.com

KN2 = Product Type Marking Code

= Manufacturer’s Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53)

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DXT651

Maximum Ratings (@T

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Base Current

Thermal Characteristics (@T

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

= +25°C, unless otherwise specified.)

CBO

CEO

EBO

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

θJA

θJL

, T

STG

80 V 60 V

5 V 3 A 6 A

500 mA

1 W

125 °C/W

18.2 °C/W

-55 to +150 °C

Thermal Characteristics and Derating Information

120

25mm x 25mm 1oz Cu

= 25°C

amb

D=0.5

100

60 40

D=0.2

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Imp edance

1.0

0.8

0.6

0.4

25mm x 25mm 1oz Cu

100

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Pulse Power Dissipation

25mm x 25mm 1oz Cu

= 25°C

amb

Sin gle puls e

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

DXT651

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)

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current Emitter-Base Cutoff Current

CBO

CEO

EBO

 

CBO

 

EBO

80 60

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

CE(sat)

BE(sat

BE(on



 

DC Current Gain

100

80 40

AC CHARACTERI STICS

Transition Frequency Output Capacitance

Switching Times

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

obo

off

140 200

 

 

2.0

1.8

I = 10mA

1.6

I = 8mA

1.4

1.2

I = 6mA

1.0

0.8

I = 4mA

0.6

I , COLLECTOR CURRENT (A)

0.4

I = 2mA

0.2

0.0 012345

V , COLLECTOR EMITTER VOL TAGE (V)

Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage

 

 

 

0.1 10

0.1 µA

0.08

0.23

0.3

0.6

0.85 1.25 V

0.8 1 V

200 200 185 120



300

 



30 pF

230

 

V V V

µA

V V



MHz

ns ns

V V VEB = 4V, IC = 0

V V V V V

V V V I

350

300

250

200

T = 150°C

T = 85°C

T = 25°C

150

h , DC CURRENT GAIN

100

T = -55°C

0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)

Fig. 3 Typical DC Current Gain

vs. Collector Current

DXT651

= 100A, IE = 0 = 10mA, IB = 0 = 100A, IC = 0

= 60V, IE = 0

= 60V, IE = 0, TA = +100°C

= 1A, IB = 100mA = 3A, IB = 300mA = 1A, IB = 100mA

= 2V, IC = 1A

= 2V, IC = 50mA

= 2V, IC = 500mA

= 2V, IC = 1A

= 2V, IC = 2A

= 5V, IC = 100mA, f = 100MHz

= 10V, f = 1MHz

= 10V. IC = 500mA,

= IB2 = 50mA

V = 2V

DXT651

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DXT651

0.35

0.3

I/I = 10

0.25

0.2

0.15

T = 150°C

0.1

SATURA TION VOL TAGE (V)

CE(SAT)

V , COLLECTOR EMITTER

0.05

0.0001 0.001 0.01 0.1 1 10 Fig. 4 Typical Collector-Emitter Saturation Voltage

I , COLLECTOR CURRENT (A)

T = 85°C

T = -55°C

vs. Collector Current

1.2

I/I = 10

1.0

T = 25°C

1.2

1.0

0.8

0.6

0.4

0.2

BE(ON)

0.0

V , BASE EMITTER TURN-ON VOLTAGE (V)

0.0001

V = 2V

T = -55°C

T = 25°C

T = 85°C

T = 150°C

0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)

Fig. 5 Typical Base-E mitter Turn-On Voltage

vs. Collector Current

f = 1MHz

0.8

T = -55°C

0.6

T = 25°C

0.4

T = 85°C

0.2

T = 150°C

BE(SAT)

V , BASE EMIT TER SATURATION VOLTAGE (V)

0.0001

0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

250

200

150

100

V = 5V

f = 100MHz

obo

C , OUTPUT CAPACIT ANCE (pF)

0 5 10 15 20 25 30 35 40

Fig. 7 Typical Output C apacitance Characteristic s

V , REVERSE VOLTAGE (V)

f , GAIN-BANDWIDTH PRODUCT (MHz)

020406080100

I , COLLECTOR CURRENT (mA)

Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

8° (4X)

Dim Min Max

A 1.40 1.60 B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44 D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60 e 1.50 Typ H 3.94 4.25

H1 2.63 2.93

L 0.89 1.20 All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X (3x)

X2 (2x)

Dimensions Value (in mm)

X 0.900

X1 1.733

X2 0.416

Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125

C 1.500

DXT651

SOT89

DXT651

Document Number: DS31184 Rev: 5 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DXT651

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