Diodes DXT651 User Manual
C
Y
DXT651
60V NPN LOW VCE(sat) TRANSISTOR IN SOT89
Features
BV
I
Low saturation voltage V
Complementary PNP Type: DXT751
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> 60V
CEO
= 3A high Continuous Current
C
CE(sat)
SOT89
< 300mV @ 1A
B
Top View Device Symbol
Mechanical Data
Case: SOT89
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
C
E
C
B
E
Top View
Pinout
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DXT651-13 KN2 13 12 2,500
DXT651-13R KN2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DXT651
Document Number: DS31184 Rev: 5 - 2
WW
KN2
www.diodes.com
KN2 = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
1 of 6
February 2013
© Diodes Incorporated
DXT651
Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Collector Current
Base Current
Thermal Characteristics (@T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
P
D
R
θJA
R
θJL
, T
T
J
STG
80 V
60 V
5 V
3 A
6 A
500 mA
1 W
125 °C/W
18.2 °C/W
-55 to +150 °C
Thermal Characteristics and Derating Information
120
25mm x 25mm 1oz Cu
= 25°C
T
80
amb
D=0.5
100
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Imp edance
1.0
0.8
0.6
0.4
25mm x 25mm 1oz Cu
100
10
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
1
Pulse Width (s)
Pulse Power Dissipation
25mm x 25mm 1oz Cu
= 25°C
T
amb
Sin gle puls e
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
DXT651
Document Number: DS31184 Rev: 5 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
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