Diodes DXT5551 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementar
• Ideally
y PNP Type Available (DXT5401)
Suited for Automated Assembly Processes
• Ideal for Medium
• Lead Free
• "Gree
By Design/RoHS Compliant (Note 1)
n" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material:
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish - Matte Tin a
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Informat
• Orde
ring Information: See Page 3
• Weight: 0.072 gr
Power Switching or Amplification Applications
Molded Plastic, "Green" Molding Compound.
: Level 1 per J-STD-020C
nnealed over Copper Leadframe
ion: See Page 3
ams (approximate)
C
4
TOP VIEW
DXT5551
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
3
E
2
C
B
1
Schematic and Pin Configuration
COLLECTOR
1
BASE
2,4
3
EMITTER
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) P
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4
website at http://www.diodes.com/data
4. Measured under pulsed conditions. Pulse width = 300μs. D
DS31225 Rev. 2 – 2
Characteristic Symbol Min Max Unit Test Condition
= 25°C unless otherwise specified
A
sheets/ap02001.pdf.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
h
fe
f
T
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V
CBO
V
CEO
V
EBO
I
C
D
R
JA
θ
T
, T
j
STG
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
⎯
⎯
⎯
⎯
50
50 nA
⎯
250
⎯
0.15
0.20
1.0 V
6.0 pF
50 200
V
V
V
nA
μA
⎯
V
⎯ V
100 300 MHz
⎯
or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
uty cycle ≤ 2%.
8.0 dB
1 of 4
180 V
160 V
6.0 V
600 mA
1 W
125
-55 to +150
I
= 100μA, IE = 0
C
I
= 1.0mA, IB = 0
C
I
= 10μA, IC = 0
E
= 120V, IE = 0
V
CB
= 120V, IE = 0, TA = 100°C
V
CB
V
= 4.0V, IC = 0
EB
= 5.0V, IC = 1.0mA
V
CE
V
= 5.0V, IC = 10mA
CE
= 5.0V, IC = 50mA
V
CE
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
°C/W
°C
VCB = 10V, f = 1.0MHz, IE = 0
= 10V, IC = 1.0mA, f = 1.0kHz
CE
V
= 10V, IC = 10mA, f = 100MHz
CE
V
= 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz
CE
DXT5551
© Diodes Incorporated
P, P
OWER
P
TIO
C
O
C
T
O
R CUR
RENT
1.0
NEW PRODUCT
0.8
N (mW)
A
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipation vs. Ambient Temperature
150
I = 10mA
(mA)
B
I = 8mA
B
I = 6mA
B
I = 4mA
B
I = 2mA
B
LLE
C
I,
012345678910
V , COLLECTOR-EMITTER VO LTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter V oltage
CE
SATURATIO N VOLTAGE (V)
CE(SAT)
V , COLLEC TOR-EMITTER
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001 0.001 0.01 0.1 1
BE(SAT)
V , BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
BE(ON)
0
V , BASE-EMITTER TURN-ON VOLTAGE (V)
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
vs. Collector Current
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DS31225 Rev. 2 – 2
2 of 4
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DXT5551
© Diodes Incorporated
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