Page 1
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Features
• Epitaxial Planar Die Construction
• Complementar
• Ideally
y PNP Type Available (DXT5401)
Suited for Automated Assembly Processes
• Ideal for Medium
• Lead Free
• "Gree
By Design/RoHS Compliant (Note 1)
n" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material:
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish - Matte Tin a
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Informat
• Orde
ring Information: See Page 3
• Weight: 0.072 gr
Power Switching or Amplification Applications
Molded Plastic, "Green" Molding Compound.
: Level 1 per J-STD-020C
nnealed over Copper Leadframe
ion: See Page 3
ams (approximate)
C
4
TOP VIEW
DXT5551
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
3
E
2
C
B
1
Schematic and Pin Configuration
COLLECTOR
1
BASE
2,4
3
EMITTER
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) P
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4
website at http://www.diodes.com/data
4. Measured under pulsed conditions. Pulse width = 300μs. D
DS31225 Rev. 2 – 2
Characteristic Symbol Min Max Unit Test Condition
= 25°C unless otherwise specified
A
sheets/ap02001.pdf.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
h
fe
f
T
www.diodes.com
V
CBO
V
CEO
V
EBO
I
C
D
R
JA
θ
T
, T
j
STG
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
⎯
⎯
⎯
⎯
50
50 nA
⎯
250
⎯
0.15
0.20
1.0 V
6.0 pF
50 200
V
V
V
nA
μA
⎯
V
⎯ V
100 300 MHz
⎯
or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
uty cycle ≤ 2%.
8.0 dB
1 of 4
180 V
160 V
6.0 V
600 mA
1 W
125
-55 to +150
I
= 100μA, IE = 0
C
I
= 1.0mA, IB = 0
C
I
= 10μA, IC = 0
E
= 120V, IE = 0
V
CB
= 120V, IE = 0, TA = 100°C
V
CB
V
= 4.0V, IC = 0
EB
= 5.0V, IC = 1.0mA
V
CE
V
= 5.0V, IC = 10mA
CE
= 5.0V, IC = 50mA
V
CE
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
I
= 50mA, IB = 5.0mA
C
°C/W
°C
VCB = 10V, f = 1.0MHz, IE = 0
= 10V, IC = 1.0mA, f = 1.0kHz
CE
V
= 10V, IC = 10mA, f = 100MHz
CE
V
= 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz
CE
DXT5551
© Diodes Incorporated
Page 2
P, P
OWER
P
TIO
C
O
C
T
O
R CUR
RENT
1.0
NEW PRODUCT
0.8
N (mW)
A
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipation vs. Ambient Temperature
150
I = 10mA
(mA)
B
I = 8mA
B
I = 6mA
B
I = 4mA
B
I = 2mA
B
LLE
C
I,
012345678910
V , COLLECTOR-EMITTER VO LTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter V oltage
CE
SATURATIO N VOLTAGE (V)
CE(SAT)
V , COLLEC TOR-EMITTER
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001 0.001 0.01 0.1 1
BE(SAT)
V , BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
BE(ON)
0
V , BASE-EMITTER TURN-ON VOLTAGE (V)
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
C
vs. Collector Current
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DS31225 Rev. 2 – 2
2 of 4
www.diodes.com
DXT5551
© Diodes Incorporated
Page 3
f = 1MHz
C
ibo
V = 10V
CE
C
obo
f = 100MHz
NEW PRODUCT
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
Fig. 8 Typical Gain-Bandw idth Pr oduct vs. Collector Curre nt
Ordering Information (Note 5)
Device
DXT5551-13
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SOT89-3L 2500/Tape & Reel
Marking Information
(Top View)
= Manufacturer’s code marking
Y
W
W
K4N = Product type marking code
YWW = Date code marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
E
B1
8
DS31225 Rev. 2 – 2
°
(
4
D1
B
e
X
)
D
0
0
2
.
0
R
L
A
C
H
3 of 4
www.diodes.com
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
DXT5551
© Diodes Incorporated
Page 4
Suggested Pad Layout
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
0.4
0.9
1.7
3.0
2.7
1.9
1.3
Unit: mm
IMPORTANT NOTICE
LIFE SUPPORT
DS31225 Rev. 2 – 2
4 of 4
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DXT5551
© Diodes Incorporated
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