Diodes DXT5401 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXT5551)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Top View Device Schematic Pin Out Configuration
BASE
COLLECTOR
2,4
1
EMITTE
DXT5401
PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.055 grams (approximate)
3
E
2
4
C
3
C
B
1
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DXT5401
Document number: DS31226 Rev. 3 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
V
CBO
V
CEO
V
EBO
I
C
R
JA
, T
T
J
STG
1 of 5
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-160 V
-150 V
-5.0 V
-600 mA
1 W
125
-55 to +150
°C/W
°C
March 2010
© Diodes Incorporated
(BR)
(BR)
(BR)
P, P
O
R
PATIO
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
CBO
I
EBO
CBO
CEO
EBO
⎯
-160
-150
-5.0
⎯
ON CHARACTERISTICS (Note 4)
50
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
FE
⎯
⎯
60
50
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
C
obo
h
fe
f
T
Noise Figure NF
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
⎯
40 200
100 300 MHz
⎯
1.0
0.8
N (mW)
0.6
⎯
⎯
⎯
-50
V
V
V
nA
μA
-50 nA
⎯
240
⎯
⎯
-0.2
-0.5
V
-1.0 V
6.0 pF
⎯
8.0 dB
250
200
(mA)
150
DXT5401
IC = -100μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
= -120V, IE = 0
V
CB
V
= -120V, IE = 0, TA = 100°C
CB
V
= -3.0V, IC = 0
EB
= -5.0V, IC = -1.0mA
V
CE
V
= -5.0V, IC = -10mA
CE
= -5.0V, IC = -50mA
V
CE
= -10mA, IB = -1.0mA
I
C
I
= -50mA, IB = -5.0mA
C
= -10mA, IB = -1.0mA
I
C
= -50mA, IB = -5.0mA
I
C
VCB = -10V, f = 1.0MHz, IE = 0
V
= -10V, IC = -1.0mA, f = 1.0kHz
CE
VCE = -10V, IC = -10mA, f = 100MHz
V
= -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz
CE
I = -10mA
B
B
I = -4mA
B
I = -2mA
B
I = -6mA
B
I = -8mA
DISSI
WE
D
0.4
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
Fig. 1 Power Dissipation
vs. Ambient Temperat ur e (Note 3)
100
LLE
50
C
I,
0
012345678910
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DXT5401
Document number: DS31226 Rev. 3 - 2
2 of 5
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March 2010
© Diodes Incorporated
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