Diodes DXT3906 User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXT3904)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
NEW PRODUCT
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
DXT3906
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
O
R
T
L
L
C
E
C
E
3
C
C
4
O
T
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
T
-40 V
-40 V
-5.0 V
C
D
R
JA
θ
, T
j
STG
-200 mA
1 W
125 °C/W
-55 to +150 °C
DS31140 Rev. 4 - 2
1 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
P, P
O
R
P
T
O
C
O
CTO
R CUR
R
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
I
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed condition. Pulse width = 300μs. Duty cycle ≤2%.
1.2
V
CE(SAT)
V
BE(SAT)
C
C
CEX
CBO
I
BL
h
FE
obo
ibo
h
h
h
h
oe
f
t
t
t
t
-40
-40
-5.0
⎯
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
ie
re
fe
2.0 12
0.1 10 x 10
100 400
⎯
⎯
⎯
-50 nA
-50 nA
-50 nA
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5 pF
10 pF
3.0 60
T
250
⎯
d
r
s
f
⎯
⎯
⎯
⎯
⎯
4.0 dB
35 ns
35 ns
225 ns
75 ns
V
I
= -10μA, IE = 0
C
V
I
= -1.0mA, IB = 0
C
V
I
= -10μA, IC = 0
E
V
= -30V, V
CE
V
= -30V, IE = 0
CB
V
= -30V, V
CE
= -100μA, VCE = -1.0V
I
C
= -1.0mA, VCE = -1.0V
I
C
⎯
I
= -10mA, VCE = -1.0V
C
= -50mA, VCE = -1.0V
I
C
I
= -100mA, VCE = -1.0V
C
IC = -10mA, IB = -1.0mA
V
= -50mA, IB = -5.0mA
I
C
= -10mA, IB = -1.0mA
I
C
V
I
= -50mA, IB = -5.0mA
C
V
= -5.0V, f = 1.0MHz, IE = 0
CB
EB(OFF)
EB(OFF)
VEB = -0.5V, f = 1.0MHz, IC = 0
kΩ
-4
= -10V, IC = -1.0mA, f = 1.0kHz
V
CE
⎯
μS
MHz
V
= -20V, IC = -10mA, f = 100MHz
CE
V
= -5.0V, IC = -100μA,
CE
R
= 1.0kΩ, f = 1.0kHz
S
= -3.0V, IC = -10mA,
V
CC
= 0.5V, IB1 = -1.0mA
V
BE(off)
= -3.0V, IC = -10mA,
V
CC
I
= IB2 = -1.0mA
B1
= -3.0V
= -3.0V
0.35
I = -10mA
1.0
0.30
(A)
N (W)
0.8
I
A
EN
0.25
0.20
B
I = -8mA
B
I = -6mA
B
I = -4mA
B
0.6
DISSI
WE
0.4
0.15
LLE
I = -2mA
B
0.10
D
0.2
0
25 50 75 100 125 150 175
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Dissipation vs. Ambient T emperature (Note 3)
C
-I ,
0.05
0.00
-V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
CE
DS31140 Rev. 4 - 2
2 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
Loading...