Diodes DXT3904 User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXT3906)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
NEW PRODUCT
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
3
E
C
C
4
O
T
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
DXT3904
T
O
R
L
C
L
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
T
60 V
40 V
6.0 V
C
D
R
JA
θ
, T
j
STG
200 mA
1 W
125 °C/W
-55 to +150 °C
DS31141 Rev. 3 - 2
1 of 4
www.diodes.com
DXT3904
© Diodes Incorporated
P, P
OWER
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
C
h
h
h
h
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed condition. Pulse width = 300μs. Duty cycle ≤2%.
1.0
BL
FE
obo
ibo
oe
f
t
t
t
t
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
ie
re
fe
1.0 10
0.5 8.0 x 10
100 400
⎯
⎯
⎯
50 nA
50 nA
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0 pF
8.0 pF
1.0 40
T
300
⎯
d
r
s
f
⎯
⎯
⎯
⎯
⎯
5.0 dB
35 ns
35 ns
200 ns
50 ns
V
I
= 10μA, IE = 0
C
V
I
= 1.0mA, IB = 0
C
V
I
= 10μA, IC = 0
E
V
= 30V, V
CE
V
= 30V, V
CE
= 100μA, VCE = 1.0V
I
C
= 1.0mA, VCE = 1.0V
I
C
⎯
I
= 10mA, VCE = 1.0V
C
= 50mA, VCE = 1.0V
I
C
I
= 100mA, VCE = 1.0V
C
IC = 10mA, IB = 1.0mA
V
= 50mA, IB = 5.0mA
I
C
= 10mA, IB = 1.0mA
I
C
V
I
= 50mA, IB = 5.0mA
C
V
= 5.0V, f = 1.0MHz, IE = 0
CB
V
= 0.5V, f = 1.0MHz, IC = 0
EB
kΩ
-4
= 10V, IC = 1.0mA, f = 1.0kHz
V
CE
⎯
μS
MHz
V
= 20V, IC = 10mA, f = 100MHz
CE
V
= 5.0V, IC = 100μA,
CE
R
= 1.0kΩ, f = 1.0kHz
S
= 3.0V, IC = 10mA,
V
CC
V
BE(off)
= 3.0V, IC = 10mA,
V
CC
I
= IB2 = 1.0mA
B1
= 3.0V
EB(OFF)
= 3.0V
EB(OFF)
= -0.5V, IB1 = 1.0mA
0.8
N (W)
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temperature ( No te 3)
DS31141 Rev. 3 - 2
2 of 4
www.diodes.com
DXT3904
© Diodes Incorporated
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