Diodes DXT3150 User Manual
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
NEW PRODUCT
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
DXT3150
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
T
O
R
L
L
C
E
C
O
3
E
2
4
C
O
P
T
C
1
B
W
E
V
I
B
Schematic and Pin Configuration
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V
(BR)CEO
I
CBO
I
EBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
V
CE(SAT)
V
BE(SAT)
h
FE
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
T
25
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
250
150
50
⎯
⎯ ⎯
C
D
R
JA
θ
, T
j
STG
⎯ ⎯
0.35
0.50
1.10
1.40
⎯
220
50 V
25 V
7 V
5 A
1 W
125 °C/W
-55 to +150 °C
V
I
= 10mA, IB = 0
1.0
1.0
550
⎯
⎯
⎯
50 pF
C
μA
V
CB
μA
VEB = 7.0V, IC = 0
I
= 3.0A, IB = 150mA
C
V
= 4.0A, IB = 200mA
I
C
= 3.0A, IB = 150mA
I
C
V
I
= 4.0A, IB = 200mA
C
= 500mA, VCE = 2.0V
I
C
⎯
= 2.0A, VCE = 2.0V
I
C
I
= 5.0A, VCE = 2.0V
C
= 50mA, VCE = 6.0V,
I
C
MHz
f = 100MHz
V
CB
= 50V, IE = 0
= 10V, IE = 0, f = 1MHz
DS31157 Rev. 3 - 2
1 of 3
www.diodes.com
DXT3150
© Diodes Incorporated
NEW PRODUCT
R = 125°C
θ
JA
I/I = 10
CB
DS31157 Rev. 3 - 2
2 of 3
www.diodes.com
I/I = 10
CB
DXT3150
© Diodes Incorporated
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