Diodes DXT2907A User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXT2222A)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free by Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams
C
4
TOP VIEW
DXT2907A
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
C
T
L
L
E
C
3
E
C
2
B
1
Schematic and Pin Configuration
O
2,4
1
E
B
S
A
3
E
T
T
I
M
E
O
R
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
= 25°C unless otherwise specified
A
V
CEO
V
CBO
V
EBO
I
C
I
CM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf
T
D
R
JA
θ
j, TSTG
-60 V
-60 V
-5 V
-600 mA
-800 mA
1 W
125
-55 to +150
°C/W
°C
DS30944 Rev. 5 - 2
1 of 4
www.diodes.com
DXT2907A
© Diodes Incorporated
P
P
OWER
PATIO
N
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
BL
-60
-60
-5.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-10
V
V
V
nA
μA
-50 nA
-50 nA
-50 nA
ON CHARACTERISTICS (Note 4)
⎯
⎯
⎯
300
⎯
-0.4
-1.6
-1.3
-2.6
⎯
V
V
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
V
CE(SAT)
V
BE(SAT)
75
100
FE
100
100
50
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
C
obo
C
ibo
f
T
⎯
⎯
200
8.0 pF
30 pF
⎯
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 4. Short duration pulse test used to minimize self-heating effect.
t
on
t
d
t
r
t
off
t
s
t
f
⎯
⎯
⎯
⎯
⎯
⎯
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
1.0
I
= -10μA, IE = 0
C
IC = -10mA, IB = 0
I
= -10μA, IC =0
E
VCB = -50V, IE = 0
V
= -50V, IE = 0, TA = 150°C
CB
VCE = -30V, V
V
= -5V, IC = 0
EB
VCE = -30V, V
= -100μA, V
I
C
I
= -1.0mA, V
C
= -10mA, V
I
C
I
= -150mA, V
C
= -500mA, V
I
C
EB(OFF)
EB(OFF)
= -10V
CE
= -10V
CE
= -10V
CE
= -10V
CE
= -10V
CE
= -0.5V
= -0.5V
IC = -150mA, IB = -15mA
I
= -500mA, IB = -50mA
C
= -150mA, IB = -15mA
I
C
I
= -500mA, IB = -50mA
C
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -2.0V, f = 1.0MHz, IC = 0
= -20V, IC = -50mA,
V
CE
f = 100MHz
= -30V, IC = -150mA,
V
CC
= -15mA
I
B1
V
= -6.0V, IC = -150mA,
CC
I
=IB2 = -15mA
B1
0.8
(mW)
0.6
DISSI
0.4
,
D
0.2
C
-I , COLLECTOR CURRENT (A)
0
25
0
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
50
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
DS30944 Rev. 5 - 2
150
2 of 4
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0
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current as a
Function of Collector Emitter Voltage
DXT2907A
© Diodes Incorporated
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