Page 1
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXT2907A)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
DXT2222A
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
O
R
T
L
L
C
E
C
O
3
E
2
4
C
O
P
T
Schematic and Pin Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
D
R
JA
θ
T
, T
j
STG
C
1
B
W
E
I
V
-55 to +150 °C
B
75 V
40 V
6 V
800 mA
600 mA
1 W
125 °C/W
2,4
1
E
S
A
3
E
T
I
M
T
E
R
DS31156 Rev. 3 - 2
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DXT2222A
© Diodes Incorporated
Page 2
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
NEW PRODUCT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
V
CE(SAT)
V
BE(SAT)
C
C
BL
FE
obo
ibo
f
T
t
d
t
t
s
t
75
40
6.0
⎯
⎯
⎯
⎯
35
50
75
100
40
35
50
⎯
⎯
0.6
⎯
⎯
⎯
300
⎯
⎯
r
⎯
⎯
f
⎯
⎯
⎯
⎯
10
10 nA
10 nA
20 nA
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8 pF
25 pF
⎯
4.0 dB
10 ns
25 ns
225 ns
60 ns
V
I
C
V
I
C
V
I
E
V
nA
μA
V
V
VEB = 3.0V, IC = 0
V
I
C
I
C
I
C
I
⎯
C
I
C
I
C
I
C
I
C
V
I
C
I
C
V
I
C
V
V
MHz
V
V
R
V
V
V
I
B1
= 10μA, IE = 0
= 10mA, IB = 0
= 10μA, IC = 0
= 60V, IE = 0
CB
= 60V, IE = 0, TA = 150°C
CB
= 60V, V
CE
= 60V, V
CE
EB(OFF)
EB(OFF)
= 3.0V
= 3.0V
= 100μA, VCE = 10V
= 1.0mA, VCE = 10V
= 10mA, VCE = 10V
= 150mA, VCE = 10V
= 500mA, VCE = 10V
= 10mA, VCE = 10V, TA = -55°C
= 150mA, VCE = 1.0V
= 150mA, IB = 15mA
= 500mA, IB = 50mA
= 150mA, IB = 15mA
= 500mA, IB = 50mA
= 10V, f = 1.0MHz, IE = 0
CB
= 0.5V, f = 1.0MHz, IC = 0
EB
= 20V, IC = 20mA, f = 100MHz
CE
= 10V, IC = 150μA,
CE
= 1.0kΩ, f = 1.0kHz
S
= 30V, IC = 150mA,
CC
= 0.5V, IB1 = 15mA
EB(off)
= 30V, IC = 150mA,
CC
= IB2 = 15mA
(A)
LLE
C
I,
R = 125°C/W
θ
JA
V , COLLECTOR EMITTER VOLTAGE (V)
CE
DS31156 Rev. 3 - 2
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DXT2222A
© Diodes Incorporated
Page 3
NEW PRODUCT
SATURA TION VOLTAGE (V)
CE(SAT)
V , COLLECTOR EMITTER
I , COLLECTOR CURRENT (mA)
C
BE(ON)
V , BASE EMITTER TURN-ON VOLTAGE (V)
CAPACIT ANCE (pF)
DS31156 Rev. 3 - 2
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
R
V , BASE EMITTER SATURATION VOLTAGE (V)
3 of 4
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BE(SAT)
I , COLLECTOR CURRENT (mA)
C
V = 20V
CE
f = 100MHz
Fig. 8 Typical Gain-Bandwidth Product
vs. Collecto r Cu rre nt
DXT2222A
© Diodes Incorporated
Page 4
Ordering Information (Note 5)
Device Packaging Shipping
DXT2222A-13 SOT89-3L 2500/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
K1P
YWW
= Manufacturer’s code marking
K1P = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
NEW PRODUCT
D1
E
B1
B
8
°
(
4
X
)
D
0
0
2
.
0
R
C
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
H
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
L
e
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
A
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
Suggested Pad Layout
0.4
0.9
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
1.7
3.0
1.9
2.7
1.3
Unit: mm
IMPORTANT NOTICE
LIFE SUPPORT
DS31156 Rev. 3 - 2
4 of 4
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DXT2222A
© Diodes Incorporated
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