Diodes DXT2222A User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXT2907A)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
DXT2222A
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
O
R
T
L
L
C
E
C
O
3
E
2
4
C
O
P
T
Schematic and Pin Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
D
R
JA
θ
T
, T
j
STG
C
1
B
W
E
I
V
-55 to +150 °C
B
75 V
40 V
6 V
800 mA
600 mA
1 W
125 °C/W
2,4
1
E
S
A
3
E
T
I
M
T
E
R
DS31156 Rev. 3 - 2
1 of 4
www.diodes.com
DXT2222A
© Diodes Incorporated
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
NEW PRODUCT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
V
CE(SAT)
V
BE(SAT)
C
C
BL
FE
obo
ibo
f
T
t
d
t
t
s
t
75
40
6.0
⎯
⎯
⎯
⎯
35
50
75
100
40
35
50
⎯
⎯
0.6
⎯
⎯
⎯
300
⎯
⎯
r
⎯
⎯
f
⎯
⎯
⎯
⎯
10
10 nA
10 nA
20 nA
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8 pF
25 pF
⎯
4.0 dB
10 ns
25 ns
225 ns
60 ns
V
I
C
V
I
C
V
I
E
V
nA
μA
V
V
VEB = 3.0V, IC = 0
V
I
C
I
C
I
C
I
⎯
C
I
C
I
C
I
C
I
C
V
I
C
I
C
V
I
C
V
V
MHz
V
V
R
V
V
V
I
B1
= 10μA, IE = 0
= 10mA, IB = 0
= 10μA, IC = 0
= 60V, IE = 0
CB
= 60V, IE = 0, TA = 150°C
CB
= 60V, V
CE
= 60V, V
CE
EB(OFF)
EB(OFF)
= 3.0V
= 3.0V
= 100μA, VCE = 10V
= 1.0mA, VCE = 10V
= 10mA, VCE = 10V
= 150mA, VCE = 10V
= 500mA, VCE = 10V
= 10mA, VCE = 10V, TA = -55°C
= 150mA, VCE = 1.0V
= 150mA, IB = 15mA
= 500mA, IB = 50mA
= 150mA, IB = 15mA
= 500mA, IB = 50mA
= 10V, f = 1.0MHz, IE = 0
CB
= 0.5V, f = 1.0MHz, IC = 0
EB
= 20V, IC = 20mA, f = 100MHz
CE
= 10V, IC = 150μA,
CE
= 1.0kΩ, f = 1.0kHz
S
= 30V, IC = 150mA,
CC
= 0.5V, IB1 = 15mA
EB(off)
= 30V, IC = 150mA,
CC
= IB2 = 15mA
(A)
LLE
C
I,
R = 125°C/W
θ
JA
V , COLLECTOR EMITTER VOLTAGE (V)
CE
DS31156 Rev. 3 - 2
2 of 4
www.diodes.com
DXT2222A
© Diodes Incorporated
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