Diodes DXT2014P5 User Manual

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Features

• 43% smaller than SOT223; 60% smaller than TO252

• Maximum height just 1.1mm

• Rated up to 3.2W

• V

• I

• Low Saturation voltage

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• “Green” Device (Note 2)

= -140V

CEO

= -4A; ICM = -10A

C

Features

• SLIC DC-DC converter

Top View Bottom View Pin-out diagram

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DXT2014P5

140V PNP MEDIUM POWER TRANSISTOR

PowerDI

Mechanical Data

• Case: PowerDI®5

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.093 grams (approximate)

C

BE

Device Schematic

®

5

Ordering Information (Note 3)

Part Number Case Packaging

DXT2014P5-13 PowerDI®5 5000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

PowerDI is a registered trademark of Diodes Incorporated.

DXT2014

YYWWK

DXT2014P5

Document number: DS32009 Rev. 2 - 2

DXT2014 = Product Type Marking Code

= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 09 for 2009)
WW = Week code (01 to 53)

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θ

θ

θ

θ

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

-180 V

-140 V

-7 V

-4 A

-10 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @ TA = 25°C (Note 4) PD
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C

R

JA

Power Dissipation @ TA = 25°C (Note 5) PD
Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25°C

R

JA

Power Dissipation @ TA = 25°C (Note 6) PD
Thermal Resistance, Junction to Ambient Air (Note 6) @TA = 25°C
Thermal Resistance, Junction to Collector Terminal
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB, single sided 2 o z. coppe r, collector pad dimensions 50mm x 50mm.

5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm.

6. Device mounted on FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout.

R

JA

R

JT

, T

T

J

STG

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3.2 W
39 °C/W

1.7 W
75 °C/W

0.74 W
169 °C/W

5.6 °C/W

-55 to +150 °C

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V

10

CE(sat)

Limited

1

DC

1s

100m

Collector Current (A)

-I

Single Pulse. T

C

10m

100m 1 10 100

100ms

See note 3

amb

10ms

=25°C

1ms

100µs

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150 175

Max Power Dissipatio n (W)

Temperature (°C)

Derat in g Cu rve

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DXT2014P5

See note 3

See note 4

See note 5

40

See note 3

30

D=0.5

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (° C/ W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

180
160
140
120
100

80
60

2 oz. weight Copper

40
20

10 100 1000 10000

Thermal Resist a n ce (°C/W)

1 oz. weight Copper

Copper Area (sq mm)

T

(amb)

=25°C

Single Pulse. T

100

10

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Di ssi p ation (W)

Pulse Width ( s)

See note 3

amb

=25°C

Pulse Power Dissipation

4

T

=25°C

(amb)

3

2 oz. weight Copper

2

1

Power Rating (W)

0

10 100 1000 10000

Copper Area (sq mm)

1 oz. weight Copper

Thermal Resistance vs. Cu A rea

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Power Rating vs. Cu Area

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(BR)

(BR)

(BR)

)

)

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Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current
Emitter Cutoff Current

Collector-Emitter Saturation Voltage (Note 7)

Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)

DC Current Gain (Note 7)

Transition Frequency
Output Capacitance
Switching Times

Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.

V
V
V

I

CBO

I

CER

R≤1kΩ

I

EBO

V

CE(sat)

V

BE(sat

V

BE(on

h

FE

f

T

C

obo

t

on

t

off

-180 -200

CBO

-140 -160

CEO

-7.0 -8.0

EBO

⎯

⎯

⎯

⎯

⎯

⎯

100
100

45
⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

<1

⎯

<1

⎯

-20

-0.5

-20

-0.5

<1 -10 nA

-40

-55

-85

-275

-60

-80

-120

-360

-940 -1040 mV

-830 -930 mV
225

200
100

5

120

33
42

636

⎯

300

⎯
⎯

⎯
⎯

⎯

⎯

V

I

= -100μA

C

V

I

= -10mA

C

V

I

= -100μA

E

nA
μA

nA
μA

= -150V

V

CB

V

= -150V, T

CB

= -150V

V

CB

= -150V, T

V

CB

VEB = -6V
I

= -0.1A, IB = -5mA

C

I

= -0.5A, IB = -50mA

C

mV

= -1A, IB = -100mA

I

C

I

= -3A, IB = -300mA

C

IC = -3A, IB = -300mA
VCE = -5V, IC = -3A
V

= -5V, IC = -10mA

CE

= -5V, IC = -1A

V

CE

⎯

VCE = -5V, IC = -3A

= -5V, IC = -10A

V

CE

= -10V, IC = -100mA,

V

MHz

CE

f = 50MHz

pF

VCB = -10V, f = 1MHz
V

ns
ns

= -50V, IC = 1A,

CC

= -IB2 = -100mA

I

B1

= 100 °C

amb

= 100 °C

amb

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DXT2014P5

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Typical Characteristic

1

Tamb=25°C

(V)

100m

CE(S AT)

- V

10m

1m 10m 100m 1

- IC Collector Current (A)

V

CE(SAT)

IC/IB=50

IC/IB=20

v I

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DXT2014P5

2.0

IC/IB=10

1.5

(V)

1.0

CE(S AT)

0.5

- V

IC/IB=10

0.0
100m 1

- IC Collector Current (A)

V

C

CE(SAT)

v I

100°C

25°C

-55°C

C

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0
1m 10m 100m 1 10

100°C

25°C

-55°C

- IC Collector Current (A)

hFE v I

C

1.4

VCE=5V

1.2

1.0

(V)

BE(ON)

- V

25°C

0.8

0.6

0.4

1m 10m 100m 1

-55°C

100°C

- IC Collector Current (A)

V

v I

BE(ON)

C

VCE=5V

250
225
200
175
150
125
100
75
50
25
0

IC/IB=10

1.2

)

FE

1.0

(V)

-55°C

0.8

25°C

BE(SAT)

0.6

- V

100°C

Typical Gain (h

0.4

1m 10m 100m 1

- IC Collector Current (A)

V

BE(SAT)

v I

C

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Package Outline Dimensions

D

b2

E

e

b1

b1

A

E1

A2

A2

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D2

L

E2

W

L1

PowerDI®5

Dim Min Max

A 1.05 1.15

A2 0.33 0.43

b1 0.80 0.99
b2 1.70 1.88

D 3.90 4.05

D2 3.054 Typ

E 6.40 6.60

e 1.84 Typ
E1 5.30 5.45
E2 3.549 Typ

L 0.75 0.95
L1 0.50 0.65

W 1.10 1.41

All Dimensions in mm

Suggested Pad Layout

X2

Y2

Z

C

E1

X1

Y1

Dimensions Value (in mm)

Z 6.6
X1 1.4
X2 3.6
Y1 0.8
Y2 4.7

C 3.87
E1 0.9

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2010, Diodes Incorporated

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DXT2014P5

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