Diodes DXT2012P5 User Manual

A
f
Features
43% smaller than SOT223; 60% smaller than TO252
Maximum height just 1.1mm
Rated up to 3.2W
V
I
Low Saturation voltage
Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1)
“Green” Device (Note 2)
= 60V
CEO
= -5.5A; ICM = 15A
C
Applications
Motor driver
Regulator circuit
ADVANCE INFORMATION
Top View Bottom View Pin-out diagram
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DXT2012P5
60V PNP MEDIUM POWER TRANSISTOR
PowerDI
Mechanical Data
Case: PowerDI®5
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.093 grams (approximate)
C
BE
Device Schematic
®
5
Ordering Information (Note 3)
Part Number Case Packaging
DXT2012P5-13 PowerDI®5 5000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DXT2012
YYWWK
DXT2012P5
Document number: DS32070 Rev. 2 - 2
DXT2012 = Product Type Marking Code
= Manufacturers’ Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 09 for 2009) WW = Week code 01 to 53
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Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
-100 V
-60 V
-7 V
-5.5 A
-15 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ TA = 25°C (Note 4) PD Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25°C
R
JA
Power Dissipation @ TA = 25°C (Note 5) PD Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25°C
ADVANCE INFORMATION
Power Dissipation @ TA = 25°C (Note 6) PD Thermal Resistance, Junction to Ambient Air (Note 6) @TA = 25°C Thermal Resistance, Junction to Collector Terminal Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, single sided 2 o z. coppe r, collector pad dimensions 50mm x 50mm.
5. Device mounted on FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm.
6. Device mounted on FR-4 PCB, 2 single sided 1oz. copper, minimum recommended pad layout.
R
JA
R
JA
R
JT
, T
T
J
STG
DXT2012P5
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3.2 W 39 °C/W
1.7 W 75 °C/W
0.74 W 169 °C/W
5.6 °C/W
-55 to +150 °C
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V
CE(sat)
Limited
10
1
DC
1s
100ms
amb
10ms
=25°C
1ms
100µs
100m
Collector Curre nt (A)
-I
Single Pulse. T
C
10m
100m 1 10 100
See note 3
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
40
See note 3
ADVANCE INFORMATION
30
D=0.5
20
D=0.2
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Re si st an ce (° C/ W )
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 25 50 75 100 125 150 175
Max Power Dissipation (W)
Temperature (°C)
See note 3
See note 4
See note 5
Derating Curve
Single Pulse. T
100
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Di ssi p ation (W)
Puls e Width (s )
amb
See note 3
Puls e P ower D issipa tion
=25°C
180 160 140 120 100
80 60
2 oz. weight Copper
40 20
10 100 1000 10000
Thermal Resistance (°C/W)
1 oz. weight Copper
T
=25°C
(amb)
Copper Area (sq mm)
Thermal Resistance vs. Cu Area
DXT2012P5
Document number: DS32070 Rev. 2 - 2
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4
T
=25°C
(amb)
3
2 oz. weight Copper
2
1
Power Rating (W)
0
10 100 1000 10000
1 oz. weight Copper
Copper Area (sq mm)
Power Rating vs. Cu Area
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(BR)
(BR)
(BR)
)
)
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Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7) Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
ADVANCE INFORMATION
Transition Frequency Output Capacitance Switching Times
Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
V V V
I
CBO
I
CER
R1k
I
EBO
V
CE(sat)
V
BE(sat
V
BE(on
h
FE
f
T
C
obo
t
on
t
off
-100 -120
CBO
-60 -80
CEO EBO
-7 -8.1
100
100
45 10
V V V
nA μA
nA μA
<1
<1
-20
-0.5
-20
-0.5
<1 -10 nA
-15
-55
-90
-195
-25
-70
-120
-250
mV
-1030 -1150 mV
-920 -1020 mV 250
200
90 25
120
48 39
370
300
MHz
pF
ns
= -100μA
I
C
= -10mA
I
C
= -100μA
I
E
= -80V
V
CB
V
CB
V
CB
V
CB
= -80V, T = -80V = -80V, T
= 100 °C
amb
= 100 °C
amb
VEB = -6V I
= -0.1A, IB = -10mA
C
I
= -1A, IB = -100mA
C
= -2A, IB = -200mA
I
C
I
= -5A, IB = -500mA
C
IC = -5A, IB = -500mA VCE = -1V, IC = -5A V
= -1V, IC = -10mA
CE
V
= -1V, IC = -2A
CE
VCE = -1V, IC = -5A V
= -1V, IC = -10A
CE
V
= -10V, IC = -100mA,
CE
f = 50MHz VCB = -10V, f = 1MHz
= 10V, IC = 1A,
V
CC
I
= IB2 = -100mA
B1
DXT2012P5
Document number: DS32070 Rev. 2 - 2
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Typical Characteristic
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1
Tamb=25°C
IC/IB=50
100m
(V)
CE(S AT)
- V
10m
1m 10m 100m 1 10
IC/IB=20
IC/IB=10
- IC Collector Current (A)
V
ADVANCE INFORMATION
1.4
1.2
1.0
0.8
0.6
0.4
Normalised Gain
0.2
0.0 1m 10m 100m 1 10
100°C
25°C
-55°C
CE(SAT)
v I
C
300
VCE=1V
250
200
150
100
50
0
- IC Collector Current (A)
hFE v I
C
0.5
IC/IB=10
0.4
0.3
(V)
0.2
CE(S AT)
- V
0.1
0.0 1m 10m 100m 1 10
100°C
25°C
-55°C
- IC Collector Cu rrent (A)
V
1.4
IC/IB=10
1.2
)
FE
1.0
(V)
0.8
BE(SAT)
0.6
- V
Typical Gain (h
0.4
1m 10m 100m 1 10
25°C
CE(S AT)
v I
-55°C
C
100°C
- IC Collector Cu rrent (A)
V
BE(SAT)
v I
C
1.4
VCE=1V
1.2
1.0
(V)
0.8
BE(ON)
0.6
- V
0.4
1m 10m 100m 1 10
25°C
-55°C
100°C
- IC Collector Curren t (A)
V
v I
BE(ON)
C
DXT2012P5
Document number: DS32070 Rev. 2 - 2
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Package Outline Dimensions
ADVANCE INFORMATION
D
b2
e
b1
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DXT2012P5
A
A2
E
b1
E1
W
A2
D2
L
E2
L1
PowerDI®5
Dim Min Max
A 1.05 1.15
A2 0.33 0.43
b1 0.80 0.99 b2 1.70 1.88
D 3.90 4.05
D2 3.054 Typ
E 6.40 6.60
e 1.84 Typ E1 5.30 5.45 E2 3.549 Typ
L 0.75 0.95
L1 0.50 0.65
W 1.10 1.41
All Dimensions in mm
Suggested Pad Layout
X2
Y2
Z
C
Dimensions Value (in mm)
E1
X1
Y1
Z 6.6 X1 1.4 X2 3.6 Y1 0.8 Y2 4.7
C 3.87 E1 0.9
DXT2012P5
Document number: DS32070 Rev. 2 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
ADVANCE INFORMATION
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated
DXT2012P5
DXT2012P5
Document number: DS32070 Rev. 2 - 2
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