Diodes DVR5V0W User Manual

Features

• Epitaxial Planar Die Construction

• Selectively Paired NPN Transistors & Zener Diodes for Series

Pass Voltage Regulator Circuits

• Ideally Suited for Automated Assembly Processes

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

SOT363

Top View

DVR5V0W

COMPLEX ARRAY FOR VOLTAGE REGULATORS

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

K

1

A

1

Top View

Pin Configuration

E

B

1

1

NC

C

1

Ordering Information (Note 3)

Device Packaging Shipping

DVR5V0W-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

VR04

VR04 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: Y = 2011

YM

M = Month ex: 9 = September

DVR5V0W

Document number: DS30578 Rev. 6 - 2

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© Diodes Incorporated

July 2011

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range

Maximum Ratings, NPN Transistor @T

= 25°C unless otherwise specified

A

R

Tj, T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

V
V
V

Collector Current - Continuous (Note 4)

Maximum Ratings, Zener Element @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Forward Voltage @ IF = 10mA VF

Electrical Characteristics, NPN Transistor @T

= 25°C unless otherwise specified

A

Pd

θ

CBO
CEO
EBO

IC

JA
STG

200 mW
625

-55 to +150

45 V
18 V

5 V

°C/W

°C

1 A

0.9 V

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

45
18

⎯
⎯

⎯
⎯

5

⎯

1
1

V

IC = 100μA, IE = 0

V

IC = 1mA, IB = 0

V

IE = 100μA, IC = 0

μA

VCB = 40V, IE = 0

μA

V

EB

= 4V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain
Collector-Emitter Saturation Voltage

hFE

V

CE(SAT)

150 800

⎯

0.5 V

⎯

IC = 100mA, V
IC = 300mA, IB = 30mA

CE

= 1V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

Electrical Characteristics, Zener Element @T

Zener Voltage Range

(Note 6)

⎯

obo

fT

100

= 25°C unless otherwise specified

A

8 pF

MHz

⎯

VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, IE = 50mA, f = 100MHz

Maximum Reverse

Leakage Current

(Note 5)

VZ @ IZT IZT IR @ VR

Nom (V) Min (V) Max (V) mA

μA

V

5.1 4.85 5.36 0.05 5 3

Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/da tashee ts/ap02001.pdf.

5. Short duration pulse test used to minimize self-heating effect.

DVR5V0W

Document number: DS30578 Rev. 6 - 2

6. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T

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= 30°C ±1°C.

T

July 2011

© Diodes Incorporated