Diodes DUP412VP5 User Manual
V
Features
• Quad TVS in Common Anode Configuration
• Ultra-Small Surface Mount Package
• Ideal For Transient Suppression and ESD Protection
• Low Capacitance, <10pF @ V
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
= 0V
R
ESD Capability
• IEC 61000-4-2 Contact Method ±8kV
• IEC 61000-4-2 Air Discharge Method ±15kV
Top View
DUP412VP5
QUAD SURFACE MOUNT TVS ARRAY
Mechanical Data
• Case: SOT-953
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Finish: Matte Tin, Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.002 grams (approximate)
K4
D4
D1
1
K1 K2
Device Schematic
K3
45
D3
D2
23
A1/A2
A3/A4
Ordering Information (Note 3)
Part Number Case Packaging
DUP412VP5-7 SOT-953 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DUP412VP5
Document number: DS31642 Rev. 8 - 2
1
www.diodes.com
V1 = Product type marking code
1 of 4
January 2011
© Diodes Incorporated
p
θ
μ
P
P
U
RATING
O
T
T
O
U
O
RWAR
C
URR
T
T
T
O
U
R
R
C
URRENT
DUP412VP5
Thermal Characteristics
Characteristic Symbol Value Unit
Peak Power Dissipation, 8x20μS Waveform (Note 5)
Thermal Resistance, Junction-to-Ambient (Note 5)
Operating and Storage Temperature Range
P
R
T
J, TSTG
k
JA
Electrical Characteristics @T
Breakdown Voltage
Type
Number
Marking
Code
V
BR
Min (V) Nom (V) Max (V)
= 25°C unless otherwise specified
A
(Note 6)
Leakage Current
(Note 6)
Capacitance @0V Bias(pF)
(Note 7)
@ IT = 5mA IRM @ VRM C
Max(
A)
(V) Typ Max Typ Max
DUP412VP5 V1 11.4 12 12.7 0.5 9.0 6.5 10 3.5 5
Notes: 4. Non-repetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 1.
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Per element, f = 1MHz, T
= 25°C
A
100
18 W
417 °C/W
-55 to +150
°C
Capacitance @3V Bias(pF)
(Note 7)
C
T
T
F
75
IN %
50
LSE DE
25
PEAK POWER OR CURRENT
EAK
0
0 25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Pulse Derating Curve
1
(A)
EN
0.1
D
0.01
S F
PppP
I , PEAK PULSE CURRENT (%I )
(nA )
SE
EVE
S
100
50
10
0
0
20 40
t, TIME ( s)
μ
Fig. 2 Pulse Waveform
V = 9V
R
60
8
6
4
ANE
0.001
AN
F
I , INS
0.0001
0.4 0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 3 Typical Forward Characteristics
DUP412VP5
Document number: DS31642 Rev. 8 - 2
2 of 4
www.diodes.com
ANE
2
AN
R
I, INS
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 4 Instantaneous Reverse Current
vs. Ambien t T empe rature
© Diodes Incorporated
January 2011
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