Diodes DT1240-04LP User Manual
Features & Applications
Clamping Voltage: 9V at 10A 100ns, TLP
9.4V at 5.5A 8μs/20μs
IEC 61000-4-2 (ESD): Air — ±16kV, Contact — ±14kV
IEC 61000-4-5 (Lightning): ±5.5A (8/20µs)
4 Channels of ESD protection
Low Channel Input Capacitance of 0.55pF Typical
TLP Dynamic Resistance: 0.25Ω
Typically Used for High Speed Ports such as USB 2.0, USB 3.0
DVI, HDMI, Ethernet Port, IEEE, MDDI, PCI Express, SATA/
eSATA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCE INFORMATIO ADVANCED INFORMATION
Pin # Description
1, 2, 4, 5 I/O
6, 7, 9, 10 No Connection
3, 8 Vss
10 9 8 7 6
12345
Pin Description (Top View) Device Schematic
DT1240-04LP
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Mechanical Data
Case: U-DFN2510-10
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe (Lead Free Plating).
Solderable per MIL-STD-202, Method 208
Weight: 0.038 grams (approximate)
Pin 1 Pin 2
3,8
Pin 4
e4
Pin 5
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DT1240-04LP-7 Standard BC7 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018
Code A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TF2 YM
BC7
DT1240-04LP
Document number: DS36312 Rev. 2 - 2
BC7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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September 2013
© Diodes Incorporated
yp
X
X
P
P
U
R
G
O
R
O
O
G
R
G
G
R VO
G
Maximum Ratings (@T
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC 61000-4-5
Peak Pulse Power, per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection – Contact Discharge, per IEC 61000-4-2
ESD Protection – Air Discharge, per IEC 61000-4-2
Operating Temperature
Storage Temperature
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
Electrical Characteristics (@T
ADVANCE INFORMATIO ADVANCED INFORMATION
Reverse Working Voltage
Reverse Current
Reverse Breakdown Voltage
Forward Clamping Voltage
Holding Voltage
Reverse Clamping Voltage (Note 6)
Trigger Voltage
ESD Clamping Voltage
Dynamic Reverse Resistance
Dynamic Forward Resistance
Channel Input Capacitance (Note7)
Delta C
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
DT1240-04LP
Document number: DS36312 Rev. 2 - 2
Characteristic Symbol Min T
C
I/O
http://www.diodes.com.
6. Clamping voltage value is based on an 8x20µs peak pulse current (I
7. C
I/O1=CPIN1+CPIN10
, C
I/O2=CPIN2+CPIN9
100
F
75
IN %
ATIN
50
LSE DE
25
PEAK POWER OR CURRENT
EAK
0
0 25 50 75 100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
Figure 1 Pulse Derating Curve
= +25°C, unless otherwise specified.)
A
I
PP
P
PP
V
DC
ESD_Air
T
OP
T
STG
9.4
— 9.5 V —
0.25
0.04 — pF
) waveform.
pp
V
ESD_Contact
V
= +25°C, unless otherwise specified.)
A
V
RWM
I
R
V
BR
V
F
V
H
V
C
—
V
TRIG
V
ESD
R
DIF-R
R
DIF-F
C
I/O
-C
I/OMA
I/OMIN
, C
I/O3=CPIN4+CPIN7
— — 5.5 V
— — 0.5 μA
6 —
-1.0 -0.85 — V
5.5 —
—
— 9 — V
—
— 0.25 — Ω
— 0.55 0.65 pF
—
, C
I/O4=CPIN5+CPIN6
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5.5 A
60 W
6 V
±14 kV
±16 kV
I/O to VSS, 8/20µs
I/O to VSS, 8/20µs
I/O to VSS
I/O to VSS
I/O to VSS
-55 to +85 °C —
-55 to +150 °C —
P
D
R
JA
350 mW
360 °C/W
Max Unit Test Conditions
IR=1mA, , I/O to VSS
VR = 5V, I/O to VSS
—
—
11
V
IR = 1mA, I/O to VSS
I
= -15mA, I/O to VSS
F
V —
V
I
= 5.5A, I/O to VSS, 8/20µs
PP
TLP, 10A, tp = 100 ns, I/O to V
—
Ω
TLP, 10A, tp = 100 ns, I/O to V
TLP, 10A, tp = 100 ns, V
V
= 2.5V, VSS = 0V, f = 1MHz
I/O
C
-C
I/OMA
9.5
E,
V
LTA
9.0
E
8.5
TRIG
I
8.0
E, T
7.5
LTA
HOLDING VOLTAGE (V)
7.0
WN V
6.5
EAKD
B
6.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
BV
V
H
AMBIENT TEMPERATURE (
T, °C)
A
Figure 2 BV, Trigger Voltage, Holding Voltage
vs. Ambien t T empe rature
DT1240-04LP
SS
I/OMIN
September 2013
© Diodes Incorporated
SS
SS
to I/O
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