Diodes DT1140-04LP User Manual
Features
Clamping Voltage:9V at 10A 100ns TLP; 9V at 6A 8s/20s
IEC 61000-4-2 (ESD): Air – +20/-18kV, Contact – +20/-16kV
IEC 61000-4-5 (Lightning): ±6A (8/20µs)
4 Channels of ESD protection
Low Channel Input Capacitance of 0.5pF Typical
TLP Dynamic Resistance: 0.25
Typically Used for High Speed Ports such as USB 2.0, DVI,
HDMI, Ethernet Port, IEEE,MDDI,PCI Express ,SATA/ eSATA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCE INFORMATIO
Pin # Description
1, 2, 4, 5 I/O
6, 7, 9, 10 No Connection
3, 8 Vss
10 9 8 7 6
12345
Pin Description (Top View) Device Schematic
DT1140-04LP
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Mechanical Data
Case: U-DFN2510-10
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe (Lead Free Plating)
Solderable per MIL-STD-202, Method 208
Weight: 0.038 grams (approximate)
Pin 1 Pin 2
3,8
Pin 4
e4
Pin 5
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DT1140-04LP-7 Standard BC2 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018
Code A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TF2 YM
BC2
DT1140-04LP
Document number: DS36293 Rev. 2 - 2
BC2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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September 2013
© Diodes Incorporated
yp
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC 61000-4-5
Peak Pulse Power, per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection – Contact Discharge, per IEC 61000-4-2
ESD Protection – Air Discharge, per IEC 61000-4-2
Operating Temperature
Storage Temperature
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical(Note 5)
Thermal Resistance, Junction to Ambient Typical(Note 5)
ADVANCE INFORMATIO
I
PP
P
PP
V
DC
V
ESD_Contact
V
ESD_Air
T
OP
T
STG
DT1140-04LP
P
R
6 A
60 W
6 V
+20/-16 kV
+20/-18 kV
-55 to +85 ºC —
-55 to +150 °C —
D
JA
350 mW
360 °C/W
I/O to VSS, 8/20µs
I/O to VSS, 8/20µs
I/O to VSS
I/O to VSS
I/O to VSS
Electrical Characteristics (@T
Characteristic Symbol Min T
Reverse Working Voltage
Reverse Current (Note 6)
Reverse Breakdown Voltage
Forward Clamping Voltage
Holding Voltage
Reverse Clamping Voltage (Note 7)
Reverse Clamping Voltage (Note 7)
Trigger Voltage
ESD Clamping Voltage
Dynamic Reverse Resistance
Dynamic Forward Resistance
Channel Input Capacitance
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
DT1140-04LP
Document number: DS36293 Rev. 2 - 2
= +25°C, unless otherwise specified.)
A
V
V
R
R
V
V
C
RWM
I
R
BR
V
F
V
H
V
C
V
C
TRIG
ESD
DIF-R
DIF-F
I/O
— — 5.5 V
— — 0.5 A
6 — — V
-1.0 -0.85 — V
5.5 — — V —
— 6.4 — V
— 9 10 V
— — 9.5 V —
— 9 — V
— 0.25 —
— 0.25 —
— 0.5 0.65 pF
) waveform.
pp
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Max Unit Test Conditions
IR=1mA, , I/O to VSS
VR = 5V, I/O to VSS
IR = 1mA, I/O to VSS
IF = -15mA, I/O to VSS
IPP = 1A, I/O to VSS, 8/20µs
IPP = 6A, I/O to VSS, 8/20µs
TLP, 10A, tp = 100 ns, I/O to VSS
TLP, 10A, tp = 100 ns, I/O to VSS
TLP, 10A, tp = 100 ns, VSS to I/O
V
= 2.5V, VSS = 0V, f = 1MHz
I/O
September 2013
© Diodes Incorporated
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