Diodes DT1042-04SO User Manual
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features
Low Clamping Voltage, I/O to V
Typical 9V at 10A 100ns, TLP
Typical 7.7V at 6A 8μs/20μs
IEC 61000-4-2 (ESD): Air – +27/-19kV, Contact – ±16kV
IEC 61000-4-4 (EFT): Level-4
IEC 61000-4-5 (Lightning): ±6A
4 Channels of ESD protection
Low Channel Input Capacitance of 0.65pF Typical
TLP Dynamic Resistance: 0.25Ω
Typically Used for High Speed Ports such as USB 2.0,
IEEE1394, HDMI, Laptop and Personal Computers, Flat Panel
Displays, Video Graphics Displays, SIM Ports
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
SS
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.016 grams (approximate)
ADVANCE INFORMATION
SOT26
Top View
I/O4
Device Schematic
Vcc
Vss
I/O3
I/O2 I/O1
DT1042-04SO
e3
Ordering Information
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DT1042-04SO-7 Standard BC1 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
(Note 4)
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018
Code A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BC1
A17
YM
BC1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DT1042-04SO
Document number: DS36292 Rev. 2 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
Maximum Ratings (@T
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC 61000-4-5
Peak Pulse Power, per IEC 61000-4-5
Operating Voltage (DC)
ESD Protection – Contact Discharge, per IEC 61000-4-2
ESD Protection – Air Discharge, per IEC 61000-4-2
Operating Temperature
Storage Temperature
= +25°C, unless otherwise specified.)
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
ADVANCE INFORMATION
Electrical Characteristics (@T
I
PP_I/O
P
PP_I/O
V
DC
V
ESD_I/O
V
ESD_I/O
T
OP
T
STG
P
R
= +25°C, unless otherwise specified.)
A
±6 A
55 W
5.5 V
±16 kV
+27/-19 kV
-55 to +85 °C
-55 to +150 °C
D
θJA
DT1042-04SO
I/O to VSS, 8/20 μs
I/O to VSS, 8/20 μs
I/O to VSS
I/O to V
I/O to V
SS
SS
—
—
300 mW
417 °C/W
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage
Reverse Current (Note 6)
Reverse Current (Note 6)
Reverse Breakdown Voltage
Forward Clamping Voltage
Reverse Clamping Voltage(Note 7)
ESD Clamping Voltage
Dynamic Resistance
Channel Input Capacitance
Variation of Channel Input Capacitance
Notes: 5. Device mounted on Polymide PCB pad layout (2oz copper) as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
DT1042-04SO
Document number: DS36292 Rev. 2 - 2
VRWM
I
R(Vcc to Vss)
I
R(IO to Vss)
VBR
VF
V
C_Vcc
V
C_I/O
V
ESD_Vcc
V
ESD_I/O
R
DIF_Vcc
R
DIF_I/O
C
I/O to VSS
C
I/O
— —
— —
— —
6.2
-1.0 -0.8
—
—
—
—
—
—
—
—
— —
6.3
7.7 9 V
6.8
9
0.1
0.25
0.65 0.8 pF
0.02
www.diodes.com
pp
2 of 5
5.0 V
1.0 μA
0.5 μA
—
—
—
—
—
—
—
) waveform.
V
to VSS
CC
V
= V
R
V
R
V
V
V
V
V
Ω
Ω
pF
= 1mA, VCC to VSS
I
R
= -15mA, VCC to VSS
I
F
I
PP
I
PP
TLP, 10A, tp = 100 ns, V
TLP, 10A, tp = 100 ns, I/O to V
TLP, 10A, tp = 100 ns, V
TLP, 10A, tp = 100 ns, I/O to V
V
R
V
CC
T=+25°C , I/O_x to V
= 5V, VCC to VSS
RWM
= V
= 5V, any I/O to VSS
RWM
= 9A, VCC to VSS, 8/20 μs
= 6A, I/O to VSS, 8/20 μs
= 2.5V, VCC = 5V, f = 1MHz
= 5V, VSS = 0V, I/O = 2.5V, f =1MHz,
to V
CC
SS
SS
to VSS
CC
SS
– I/O_y to VSS
SS
September 2013
© Diodes Incorporated
per Fig. 8
,
per Fig. 8
,
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