Diodes DST847BPDP6 User Manual
COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• Ultra Small Package
SOT-963
DST847BPDP6
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)
6
Q1
Device SchematicTop View
4
5
Q2
2
31
Ordering Information
Device Packaging Shipping
DST847BPDP6-7 SOT-963 10,000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
TC
TC = Product Type Marking Code
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
1 of 8
www.diodes.com
January 2010
© Diodes Incorporated
θ
T
R
T T
HER
R
TANC
P
P
T
RAN
N
T P
OWER
P
P
OWER
P
TIO
N
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
D = 0.7
E
D = 0.5
D = 0.3
DST847BPDP6
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
T
, T
J
STG
50(-50) V
45(-45) V
6.0(-5.0) V
100 (-100) mA
250 mW
500 °C/W
-55 to +150 °C
1,000
(W)
100
SIE
10
ESIS
0.1
D = 0.1
MAL
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 370°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.00001
t , PULSE DURA TION TIME (s)
1
Fig. 1 Transi ent Thermal Respo nse
0.4
Single Pulse
R (t) = r(t) *
θ
JA
R = 370°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.3
(W)
Note 3
A
0.2
1
DISSI
EAK
0.1
,
0.1
D
(pk),
0.01
0.00001 0.001 0.1 10 1,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Pow er Dissipat ion vs. Ambient Temperat ur e
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
2 of 8
www.diodes.com
January 2010
© Diodes Incorporated
(BR)
Electrical Characteristics – Q1 NPN Transistor @T
Characteristic (Note 4) Symbol Min Typical Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
Notes: 4. Short duration pulse test used to minimize self-heating effect
V
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
f
FE
T
cbo
CBO
50
50
45
6
-
100
200
-
-
-
-
580
100
-
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
3 of 8
www.diodes.com
= 25°C unless otherwise specified
A
150
150
65
8.35
-
220
300
50
122
760
880
650
725
175
1.5
- V
- V
- V
- V
15 nA
-
470
125
300
1000
1100
750
800
-
mV
mV
mV
- MHz
- pF
IC = 10μA, IB = 0
IC = 10μA, IB = 0
IC = 1mA, IB = 0
IE = 1μA, IC = 0
= 30V
V
CB
I
= 10μA, V
C
I
= 2.0mA, V
C
= 10mA, IB = 0.5mA
I
C
= 100mA, IB = 5.0mA
I
C
= 10mA, IB = 0.5mA
I
C
I
= 100mA, IB = 5.0mA
C
= 2.0mA, V
I
C
= 10mA, V
I
C
= 5V, I
V
CE
f = 100MHz
VCB = 10V, f = 1.0MHz
DST847BPDP6
= 5V
CE
= 5V
CE
= 5V
CE
= 5V
CE
= 10mA,
C
January 2010
© Diodes Incorporated
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