Diodes DST847BDJ User Manual
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• Ultra Small Package
SOT-963
DST847BDJ
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)
Device SchematicTop View
Ordering Information
Device Packaging Shipping
DST847BDJ-7 SOT-963 10,000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
DST847BDJ
Document number: DS32035 Rev. 1 - 2
TA
1 of 5
www.diodes.com
TA = Product Type Marking Code
January 2010
© Diodes Incorporated
θ
T
R
T T
HER
R
TANC
P
P
T
R
T P
OWER
P
P
OWER
PATIO
N
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
D = 0.7
E
D = 0.5
D = 0.3
DST847BDJ
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
T
, T
J
STG
50 V
45 V
6.0 V
100 mA
300 mW
417 °C/W
-55 to +150 °C
1,000
(W)
100
ANSIEN
10
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.000001 0.0001 0.001 0.01 0.1 1 10 100 10,000
0.00001
D = 0.9
t , PULSE DURA TION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 370°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
1,000
Fig. 1 Transient Thermal Response
0.4
Single Pulse
R (t) = r(t) *
θ
JA
R = 370°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.3
(W)
Note 3
0.2
DISSI
EAK
1
,
0.1
D
(pk),
0.1
0.00001 0.001 0.1 10 1,000
t , PULSE DURA TION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Pow er Dissipat ion vs. A m bient Temperat ur e
DST847BDJ
Document number: DS32035 Rev. 1 - 2
2 of 5
www.diodes.com
January 2010
© Diodes Incorporated
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