Diodes DST3946DPJ User Manual

Features

• Ultra Small Package

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

SOT963

Top View

DST3946DPJ

COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT963

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0027 grams (approximate)

6

Q1

Device Schematic

4

5

Q2

2

31

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DST3946DPJ-7 T7 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DST3946DPJ

Document number: DS32040 Rev. 2 - 2

T7

www.diodes.com

T7 = Product Type Marking Code

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November 2012

θ

Maximum Ratings - NPN (Q1) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Maximum Ratings - PNP (Q2) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

V

EBO

I

C

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

V

EBO

I

C

DST3946DPJ

60 V 40 V

6.0 V

200 mA

-40 V

-5.0 V

-200 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

DST3946DPJ

Document number: DS32040 Rev. 2 - 2

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P

D

R

JA

T

, T

J

STG

300 mW 417 °C/W

-55 to +150 °C

November 2012

T

R

T T

H

R

T

C

P

T

RAN

N

T P

OWER

P, P

OWER

PATIO

N

DST3946DPJ

1

E AN

ESIS

MAL E

ANSIEN

r(t),

D = 0.7 D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

t , PULSE DURA TION TIME (s)

1

R (t) = r(t) *

θ

JA

R = 370°C/W

P(pk)

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

JA

t

θθJA

1

t

2

Fig. 1 Transie nt Therma l Response

1,000

(W)

100

Single Pulse

R (t) = r(t) *

θ

JA

R = 370°C/W

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

JA

θθJA

0.4

0.3

(W)

10

SIE

0.2

DISSI

EAK

1

D

0.1

(pk),

0.1

0.00001 0.001 0.1 10 1,000 t , PULSE DURA TION TIME (s)

1

Fig. 2 Single Pulse Maximum Power Dissipation

0

0 20 40 60 80 100 120 140 160

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 3 Pow er Dissipat ion vs. A m bient Temperat ur e

DST3946DPJ

Document number: DS32040 Rev. 2 - 2

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November 2012