Features
• Ultra Small Package
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
SOT963
Top View
DST3946DPJ
COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT963
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)
6
Q1
Device Schematic
4
5
Q2
2
31
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DST3946DPJ-7 T7 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
T7
www.diodes.com
T7 = Product Type Marking Code
1 of 9
November 2012
© Diodes Incorporated
θ
Maximum Ratings - NPN (Q1) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Maximum Ratings - PNP (Q2) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
DST3946DPJ
60 V
40 V
6.0 V
200 mA
-40 V
-40 V
-5.0 V
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
2 of 9
www.diodes.com
P
D
R
JA
T
, T
J
STG
300 mW
417 °C/W
-55 to +150 °C
November 2012
© Diodes Incorporated
T
R
T T
H
R
R
T
C
P
P
T
RAN
N
T P
OWER
P, P
OWER
PATIO
N
DST3946DPJ
1
E
AN
ESIS
MAL
E
ANSIEN
r(t),
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
t , PULSE DURA TION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 370°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
Fig. 1 Transie nt Therma l Response
1,000
(W)
100
Single Pulse
R (t) = r(t) *
θ
JA
R = 370°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.4
0.3
(W)
10
SIE
0.2
DISSI
EAK
1
D
0.1
(pk),
0.1
0.00001 0.001 0.1 10 1,000
t , PULSE DURA TION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Pow er Dissipat ion vs. A m bient Temperat ur e
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
3 of 9
www.diodes.com
November 2012
© Diodes Incorporated
)
)
r
C
O
CTO
R C
U
R
REN
T
C C
URR
N
T
G
N
Electrical Characteristics - NPN (Q1) (@T
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Storage Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
0.14
0.12
(A)
0.10
I = 1mA
B
0.08
0.06
LLE
0.04
C
I,
0.02
Characteristic Symbol Min Max Unit Test Condition
I = 2mA
B
I = 0.8mA
B
I = 0.6mA
B
I = 0.4mA
B
I = 0.2mA
B
I = 1.2mA
B
I = 1.4mA
B
I = 1.6mA
B
I = 1.8mA
B
= +25°C, unless otherwise specified.)
A
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
h
FE
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
t
d
t
t
⎯
s
t
⎯
f
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
1.0 10
0.5 8.0 x 10
100 400
1.0 40
300
⎯
⎯
⎯
⎯
⎯
50 nA
50 nA
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0 pF
8.5 pF
⎯
35 ns
35 ns
200 ns
50 ns
400
300
AI
E
200
FE
h, D
100
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
V
= 30V, V
CE
V
= 30V, V
CE
= 100µA, V
I
C
I
= 1.0mA, VCE = 1.0V
C
= 10mA, VCE = 1.0V
I
C
⎯
I
= 50mA, V
C
= 100mA, VCE = 1.0V
I
C
= 10mA, IB = 1.0mA
I
C
V
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
V
= 50mA, IB = 5.0mA
I
C
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
kΩ
-4
= 10V, IC = 1.0mA,
V
CE
f = 1.0kHz
⎯
μS
V
= 20V, IC = 10mA,
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
CE
f = 100MHz
V
= 3.0V, IC = 10mA,
CC
V
= - 0.5V, IB1 = 1.0mA Rise Time
BE(off)
= 3.0V, IC = 10mA,
V
CC
I
= IB2 = 1.0mA Fall Time
B1
MHz
DST3946DPJ
= 3.0V
EB(OFF
= 3.0V
EB(OFF
= 1.0V
CE
= 1.0V
CE
V = 5V
CE
0
012 345
V , COLLECTOR-EMITTER VOLT AGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.1 1 10 100 1,000
Fig. 5 Typical DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (mA)
C
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
4 of 9
www.diodes.com
November 2012
© Diodes Incorporated
C
O
CTO
R
T
T
R
C
O
CTO
R
T
T
R
T
TER TURN-O
OLTAG
2
T
TER
TURATIO
N VOLTAG
C
O
C
TOR
CUR
REN
T
DST3946DPJ
1
I/I = 10
CB
E
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
0.01
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
C
T = 150°C
T = 125°C
A
T = -55°C
A
A
T = 85°C
A
T = 25°C
A
vs. Collector Current
1.1
E (V)
1.0
V = 5V
CE
1
I/I = 20
CB
E
-EMI
VOLTAG E (V)
0.1
LLE
SATURATION
CE(SAT)
V,
0.01
0.1 1 10 100 1,000
Fig. 7 Typical Collector-Emitter Saturation Voltage
I , COLLECTOR CURRENT (mA)
C
T = 125°C
A
T = -55°C
A
T = 150°C
A
T = 25°C
A
T = 85°C
vs. Collector Current
1.
E (V)
Gain = 10
A
1.0
0.9
N V
0.8
0.7
0.6
0.5
0.4
BE(ON)
0.3
V , BASE-EMI
0.1 1 10 100 1,000
Fig. 8 Typical Base-Emitter Turn-On Voltage
10
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
I , COLLECTOR CURRENT (mA)
C
vs. Collector Curr ent
T = 25°C Single,
A
Non-Repetitive Pulse
0.8
SA
0.6
0.4
0.2
0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
T = 85°C
A
I , COLLECTOR CURRENT (mA)
C
A
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
(A)
1
P = 1ms
DC
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
P = 100ms
W
P = 10ms
W
V , COLLECTOR EMITTER CURRENT (V)
CE
Fig. 10 Safe Operation Area (NPN)
W
P = 100µs
W
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
5 of 9
www.diodes.com
November 2012
© Diodes Incorporated
)
)
r
C
O
CTO
R
C
U
R
R
T
C C
U
R
R
N
T
GAIN
Electrical Characteristics - PNP (Q2) (@T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Storage Time
Notes: 7. Short duration pulse test used to minimize self-heating effect.
0.20
0.16
(A)
EN
I = -1.2mA
0.12
0.08
LLE
C
0.04
-I ,
Characteristic Symbol Min Max Unit Test Condition
I = -2mA
B
I = -1mA
B
I = -0.8mA
B
I = -0.6mA
B
I = -0.4mA
B
I = -0.2mA
B
B
I = -1.4mA
B
I = -1.6mA
B
I = -1.8mA
B
= +25°C, unless otherwise specified.)
A
BV
BV
BV
I
I
CBO
h
V
CE(sat)
V
BE(sat)
C
C
h
CBO
CEO
EBO
CEX
I
BL
FE
obo
ibo
h
h
h
oe
f
T
t
d
t
t
t
ie
re
fe
s
f
-40
-40
-5.0
⎯
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
2.0 12
0.1 10 x 10
100 400
3.0 60
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-50 nA
-50 nA
-50 nA
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5 pF
10 pF
⎯
35 ns
35 ns
225 ns
75 ns
400
350
300
250
E
200
150
FE
h, D
100
50
V
V
V
⎯
V
V
kΩ
-4
⎯
μS
MHz
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
DST3946DPJ
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
V
= -30V, V
CE
V
= -30V, IE = 0
CE
V
= -30V, V
CE
= -100µA, V
I
C
I
= -1.0mA, VCE = -1.0V
C
= -10mA, VCE = -1.0V
I
C
I
= -50mA, V
C
= -100mA, VCE = -1.0V
I
C
= -10mA, IB = -1.0mA
I
C
I
= -50mA, IB = -5.0mA
C
= -10mA, IB = -1.0mA
I
C
= -50mA, IB = -5.0mA
I
C
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
= 10V, IC = 1.0mA,
V
CE
f = 1.0kHz
V
= -20V, IC = -10mA,
CE
f = 100MHz
V
= -3.0V, IC = -10mA,
CC
V
= 0.5V, IB1 = -1.0mA Rise Time
BE(off)
= -3.0V, IC = -10mA,
V
CC
I
= IB2 = -1.0mA Fall Time
B1
EB(OFF
EB(OFF
= -1.0V
CE
= -1.0V
CE
V = 5V
CE
= -3.0V
= -3.0V
0
01 2 3 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 11 Typical Collector Current
vs. Collecto r -Em i t te r Voltage
0
0.1 1 10 100 1,000
Fig. 12 Typical DC Current Gain vs. Collector Current
-I , COLLECTOR CURRENT (mA)
C
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
6 of 9
www.diodes.com
November 2012
© Diodes Incorporated
C
O
CTO
R
T
T
R
C
O
CTO
R
T
T
R
2
T
TER TURN-O
OLTAG
2
T
TER
TURATIO
N VOLTAG
C
O
C
TOR
CUR
RENT
DST3946DPJ
1
I/I = 10
CB
E
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
-V ,
0.01
1 10 100 1,000
Fig. 13 Typical Collector-Emitter Saturation Voltage
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
-I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
1.
E (V)
Gain = 10
1
I/I = 20
CB
E
-EMI
T = 150°C
LLE
CE(SAT)
VOLTAGE (V)
0.1
SATURATION
T = 125°C
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
A
-V ,
0.01
0.1 1 10 100 1,000
Fig. 14 Typical Collector-Emitter Saturation Voltage
-I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
1.
E (V)
Gain = 10
1.0
N V
0.8
0.6
0.4
BE(ON)
0.2
-V , BASE-EMI
0.1 1 10 100 1,000
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
T = 85°C
A
-I , COLLECTOR CURRENT (mA)
C
A
Fig. 15 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
(A)
1
DC
0.1
P = 100ms
W
P = 10ms
W
T = 25°C Single,
A
Non-Repetitive Pulse
P = 1ms
W
P = 100µs
W
LLE
0.01
C
-I ,
1.0
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
SA
0.8
0.6
0.4
0.2
0.1 1 10 100 1,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 16 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.001
0.1 1 10 100
-V , COLLECTOR EMITTER CURRENT (V)
CE
Fig. 17 S af e O peration Area (PNP)
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
7 of 9
www.diodes.com
November 2012
© Diodes Incorporated
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
A1
D
e1
L
E
e
b (6 places)
A
c
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05 -
C 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y1
Y (6X)
X (6X)
CC
Dimensions Value (in mm)
C 0.350
X 0.200
Y 0.200
Y1 1.100
DST3946DPJ
SOT963
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
8 of 9
www.diodes.com
November 2012
© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DST3946DPJ
DST3946DPJ
Document number: DS32040 Rev. 2 - 2
9 of 9
www.diodes.com
November 2012
© Diodes Incorporated
Loading...