Page 1
Features
• V
• I
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• Ultra Small Package
NEW PRODUCT
= 40V
CEO
= 200mA
C
SOT-963
DST3904DJ
40V DUAL NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)
Device SchematicTop View
Ordering Information
Device Packaging Shipping
DST3904DJ-7 SOT-963 10,000/Tape & Reel
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
DST3904DJ
Document number: DS32038 Rev. 2 - 2
T8
www.diodes.com
T8 = Product Type Marking Code
1 of 6
April 2010
© Diodes Incorporated
Page 2
θ
T
R
T T
HER
R
TANC
P
P
T
R
N
N
T
P
O
R
P, P
OWER
P
TIO
N
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
NEW PRODUCT
1
E
D = 0.7
D = 0.5
D = 0.3
DST3904DJ
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
T
, T
J
STG
60 V
40 V
6.0 V
200 mA
300 mW
417 °C/W
-55 to +150 °C
1,000
(W)
100
WE
SIE
A
10
ESIS
0.1
D = 0.1
MAL
ANSIEN
r(t),
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
t , PULSE DURA TION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 370°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
Fig. 1 Transie nt T hermal Response
0.4
Single Pulse
R (t) = r(t) *
θ
JA
R = 370°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
0.3
(W)
A
Note 3
0.2
DISSI
EAK
1
D
0.1
(pk),
0.1
0.00001 0.001 0.1 10 1,000
t , PULSE DURA TION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Pow er Dissipat ion vs. Ambient Temperat ur e
DST3904DJ
Document number: DS32038 Rev. 2 - 2
2 of 6
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April 2010
© Diodes Incorporated
Page 3
(BR)
(BR)
(BR)
)
)
r
C
O
CTO
R CUR
REN
T
C C
U
R
R
N
T GAIN
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Storage Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
0.14
I = 2mA
B
I = 0.8mA
B
I = 0.6mA
B
I = 0.4mA
B
I = 0.2mA
B
(A)
LLE
I,
C
0.12
0.10
0.08
0.06
0.04
I = 1.2mA
B
I = 1mA
B
I = 1.4mA
B
I = 1.6mA
B
I = 1.8mA
B
0.02
V
V
V
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
CBO
CEO
EBO
⎯
⎯
BL
FE
obo
ibo
ie
re
fe
oe
f
T
t
d
t
t
s
t
f
60
40
6.0
⎯
⎯
⎯
50 nA
50 nA
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0 pF
8.5 pF
1.0 10
0.5 8.0 x 10
100 400
1.0 40
300
⎯
⎯
⎯
⎯
⎯
35 ns
35 ns
200 ns
50 ns
400
300
E
200
FE
h, D
100
V
I
= 10μA, IE = 0
C
V
I
= 1.0mA, IB = 0
C
V
I
= 10μA, IC = 0
E
V
= 30V, V
CE
V
= 30V, V
CE
I
= 100µA, V
C
I
= 1.0mA, VCE = 1.0V
C
= 10mA, VCE = 1.0V
I
C
⎯
I
= 50mA, V
C
= 100mA, VCE = 1.0V
I
C
= 10mA, IB = 1.0mA
I
C
V
I
= 50mA, IB = 5.0mA
C
= 10mA, IB = 1.0mA
I
C
V
= 50mA, IB = 5.0mA
I
C
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
kΩ
-4
= 10V, IC = 1.0mA,
V
CE
f = 1.0kHz
⎯
μS
= 20V, IC = 10mA,
V
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
CE
f = 100MHz
V
= 3.0V, IC = 10mA,
CC
V
= - 0.5V, IB1 = 1.0mA Rise Time
BE(off)
V
= 3.0V, IC = 10mA,
CC
I
= IB2 = 1.0mA Fall Time
B1
MHz
DST3904DJ
= 3.0V
EB(OFF
= 3.0V
EB(OFF
= 1.0V
CE
= 1.0V
CE
V = 5V
CE
0
012 345
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.1 1 10 100 1,000
Fig. 5 Typical DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (mA)
C
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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© Diodes Incorporated
Page 4
C
O
CTO
R
T
T
R
C
O
CTO
R
T
T
R
T
TER TURN-O
OLTAG
2
T
TER
TURATIO
N VOLTAG
C
O
C
TOR
CUR
REN
T
NEW PRODUCT
DST3904DJ
1
I/I = 10
CB
E
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
0.01
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
C
T = 150°C
T = 125°C
A
T = -55°C
A
A
T = 85°C
A
T = 25°C
A
vs. Collector Current
1.1
E (V)
1.0
V = 5V
CE
1
I/I = 20
CB
E
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
0.01
0.1 1 10 100 1,000
Fig. 7 Typical Collector-Emitter Saturation Voltage
I , COLLECTOR CURRENT (mA)
C
T = 125°C
A
T = -55°C
A
T = 150°C
A
T = 25°C
A
T = 85°C
vs. Collector Current
1.
E (V)
Gain = 10
A
1.0
0.9
N V
0.8
0.7
0.6
0.5
0.4
BE(ON)
0.3
V , BASE-EMI
0.1 1 10 100 1,000
Fig. 8 Typical Base-Emitter Turn-On Voltage
10
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
T = 25°C Single,
A
Non-Repetitive Pulse
0.8
SA
0.6
0.4
0.2
0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
T = 85°C
A
I , COLLECTOR CURRENT (mA)
C
A
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
(A)
1
P = 1ms
DC
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
P = 100ms
W
P = 10ms
W
V , COLLECTOR EMITTER CURRENT (V)
CE
Fig. 10 Safe Operation Area (NPN)
W
P = 100µs
W
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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April 2010
© Diodes Incorporated
Page 5
Package Outline Dimensions
NEW PRODUCT
E1
A1
D
e1
L
E
e
b (6 places)
A
c
Dim Min Max Typ
SOT-963
A 0.40 0.50 0.45
A1 0 0.05 -
C 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
Suggest Pad Layout
DST3904DJ
Y1
Y (6X)
X (6X)
CC
Dimensions Value (in mm)
C 0.350
X 0.200
Y 0.200
Y1 1.100
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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© Diodes Incorporated
Page 6
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
NEW PRODUCT
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DST3904DJ
DST3904DJ
Document number: DS32038 Rev. 2 - 2
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April 2010
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