Diodes DSS8110Y User Manual
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (DSS9110Y)
• Ultra Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green Device" (Note 2)
SOT-363
Top View Device Symbol
100V LOW V
B
DSS8110Y
NPN SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
C
E
CCE
CCB
Pin-Out Top
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS8110Y-7 ZN5 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZN5
ZN5 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
DSS8110Y
Document number: DS31679 Rev. 2 - 2
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
N
C
O
CTO
R CUR
RENT
T
R
T T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
I
Base Current – Continuous
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.7
0.6
R
, T
T
J
CBO
CEO
EBO
I
CM
I
10
C
B
JA
STG
DSS8110Y
120 V
100 V
5 V
1 A
3 A
0.3 A
625 mW
200
-55 to +150
°C/W
°C
Pw = 100µs
(W)
0.5
0.4
DISSI
0.3
0.2
D
R = 200°C/W
0.1
θ
JA
0
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Pow er Dissipat ion vs. A m bient Temperature
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
(A)
1
DC
Pw = 100ms
0.1
Pw = 10ms
Pw = 1ms
LLE
0.01
C
I,
0.001
°
D = 0.9
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emit ter Voltage
R (t) = r(t) *
θ
JA
R = 180°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
1,000
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 3 Transi ent Thermal Respo nse
DSS8110Y
Document number: DS31679 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Loading...