Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (DSS9110Y)
• Ultra Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green Device" (Note 2)
SOT-363
Top View Device Symbol
100V LOW V
B
DSS8110Y
NPN SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
C
E
CCE
CCB
Pin-Out Top
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS8110Y-7 ZN5 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZN5
ZN5 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
DSS8110Y
Document number: DS31679 Rev. 2 - 2
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
N
C
O
CTO
R CUR
RENT
T
R
T T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
I
Base Current – Continuous
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.7
0.6
R
, T
T
J
CBO
CEO
EBO
I
CM
I
10
C
B
JA
STG
DSS8110Y
120 V
100 V
5 V
1 A
3 A
0.3 A
625 mW
200
-55 to +150
°C/W
°C
Pw = 100µs
(W)
0.5
0.4
DISSI
0.3
0.2
D
R = 200°C/W
0.1
θ
JA
0
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Pow er Dissipat ion vs. A m bient Temperature
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
(A)
1
DC
Pw = 100ms
0.1
Pw = 10ms
Pw = 1ms
LLE
0.01
C
I,
0.001
°
D = 0.9
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emit ter Voltage
R (t) = r(t) *
θ
JA
R = 180°C/W
P(pk)
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
t
θθJA
1
t
2
1,000
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 3 Transi ent Thermal Respo nse
DSS8110Y
Document number: DS31679 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
)
)
)
C
O
CTO
R
C
U
R
RENT
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
BV
BV
BV
I
CBO
I
CES
I
EBO
CBO
CEO
EBO
120
100
5
⎯
⎯
⎯ ⎯
⎯ ⎯
ON CHARACTERISTICS (Note 5)
150
DC Current Gain
h
FE
150
100
80
⎯
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
R
V
V
CE(sat
BE(sat
BE(on
⎯ ⎯
⎯ ⎯
⎯ ⎯
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
C
obo
f
T
⎯ ⎯
100
1.2
⎯ ⎯
⎯ ⎯
⎯ ⎯
100
⎯
50
⎯
100 nA
100 nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
500
⎯
⎯
40
120
200
200 mΩ
1.05 V
0.9 V
7.5 pF
⎯ ⎯
500
V
IC = 100μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100μA, IC = 0
nA
μA
V
mV
= 80V, IE = 0
V
CB
= 80V, IE = 0, TA = 150°C
V
CB
VCE = 80V, V
V
= 4V, IC = 0
EB
= 10V, IC = 1mA
V
CE
= 10V, IC = 250mA
V
CE
V
= 10V, IC = 500mA
CE
= 10V, IC = 1A
V
CE
= 100mA, IB = 10mA
I
C
I
= 500mA, IB = 50mA
C
= 1A, IB = 100mA
I
C
BE
= 0
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
V
= 10V, IC = 1A
CE
VCB = 10V, f = 1.0MHz
MHz
VCE = 10V, IC = 50mA, f = 100MHz
DSS8110Y
1.0
(A)
I = 5mA
B
0.8
I = 4mA
B
0.6
0.4
LLE
C
I,
0.2
0
0246810
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 3mA
B
I = 2mA
B
I = 1mA
B
Fig. 4 Typical Collector Current
h , DC CURRENT GAIN
400
300
200
FE
100
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
vs. Collector-Emitter Volta ge
DSS8110Y
Document number: DS31679 Rev. 2 - 2
3 of 5
www.diodes.com
October 2010
© Diodes Incorporated
C
O
C
TOR
T
TER
T
TER TUR
O
OLTAG
T
TER
TURATIO
N VOLTAG
1
I/I = 10
CB
-EMI
VOLTAGE (V)
0.1
LLE
T = 150°C
SATURATION
CE(SAT)
V,
T = 125°C
A
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
E (V)
N V
N-
1.2
1.0
0.8
0.6
0.4
0.2
V = 10V
CE
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
DSS8110Y
0.01
0.0001
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V)
I = 10
/I
CB
V , BASE-EMI
BE(ON)
0
0.0001
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1.0
0.8
T = -55°C
A
0.6
SA
V , BASE-EMI
T = 25°C
A
T = 125°C
A
T = 85°C
A
0.4
T = 150°C
0.2
0
0.1 1 10 100 1,000
BE(SAT)
A
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Package Outline Dimensions
K
J
DSS8110Y
Document number: DS31679 Rev. 2 - 2
A
SOT-363
Dim Min Max
B C
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
H
M
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
D
L
F
M 0.10 0.22
0° 8°
α
All Dimensions in mm
4 of 5
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October 2010
© Diodes Incorporated
DSS8110Y
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
DSS8110Y
Document number: DS31679 Rev. 2 - 2
5 of 5
www.diodes.com
October 2010
© Diodes Incorporated
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