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Features
• Ideally Suited for Automated Assembly Processes
• Ultra Low Collector-Emitter Saturation Voltage
• Complementary NPN Type Available (DSS60601MZ4)
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
Device Schematic
DSS60600MZ4
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
O
R
T
3
E
C
4
C
E
R
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
2
B
1
-100 V
-60 V
-6 V
-12 A
-6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on Polymide PCB with 330mm
2
2oz. Copper pad layout.
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1.2 W
R
JA
R
JA
, T
T
J
STG
104 °C/W
2 W
62.5 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
CBO
V
CEO
V
EBO
I
CBO
I
⎯ ⎯
EBO
h
FE
V
CE(SAT)
R
CE(SAT
V
BE(SAT
V
BE(ON
f
T
C
⎯
obo
C
ibo
t
on
t
d
t
t
off
t
s
t
f
-100
-60
-6
⎯ ⎯
⎯ ⎯
150
120
100
70
⎯ ⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
DSS60600MZ4
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
⎯ ⎯
⎯
360
⎯ ⎯ V
⎯ ⎯ V
-50
-50 -70
-90 -120
-250
-350
45 60
-1.0 V
-0.9 V
⎯ ⎯
50
300
350
180
170
400
300
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
I
= -100μA
C
V
I
= -10mA
C
V
I
= -100μA
E
nA
μA
= -100V, IE = 0
V
CB
= -100V, IE = 0, TA = 150°C
V
CB
VEB = -6V, IC = 0
V
= -2V, IC = -0.5A
CE
V
= -2V, IC = -1A
CE
⎯
mV
mΩ
= -2V, IC = -2A
CE
= -2V, IC = -6A
CE
I
= -0.1A, IB = -2mA
C
= -1A, IB = -100mA
I
C
= -2A, IB = -200mA
I
C
= -3A, IB = -60mA
I
C
= -6A, IB = -600mA
I
C
= -2A, IB = -200mA
I
C
IC = 1A, IB = -100mA
VCE = -2V, IC = -1A
= -10V, IC = -100mA,
V
CE
MHz
f = 100MHz
pF
VCB = -10V, f = 1MHz
pF
V
= -5V, f = 1MHz
EB
ns
V
= -30V, IC = -750mA,
CC
ns
ns
ns
ns
ns
15mA
I
B1 = -
V
= -30V, IC = -750mA,
CC
= IB2 = -15mA
I
B1
1.6
(mW)
I
1.2
A
DISSI
0.8
10
(A)
EN
1
Pw = 100ms
0.1
Pw = 1ms
Pw = 10ms
LLE
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temperature
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
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0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VO LTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
December 2008
© Diodes Incorporated