θ
θ
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Features
• Ideally Suited for Automated Assembly Processes
• Ultra Low Collector-Emitter Saturation Voltage
• Complementary NPN Type Available (DSS60601MZ4)
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
Device Schematic
DSS60600MZ4
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
O
R
T
3
E
C
4
C
E
R
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
2
B
1
-100 V
-60 V
-6 V
-12 A
-6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on Polymide PCB with 330mm
2
2oz. Copper pad layout.
1 of 5
www.diodes.com
1.2 W
R
JA
R
JA
, T
T
J
STG
104 °C/W
2 W
62.5 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
r
P, P
OWER
P
T
O
N
C
O
C
TOR C
URR
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
CBO
V
CEO
V
EBO
I
CBO
I
⎯ ⎯
EBO
h
FE
V
CE(SAT)
R
CE(SAT
V
BE(SAT
V
BE(ON
f
T
C
⎯
obo
C
ibo
t
on
t
d
t
t
off
t
s
t
f
-100
-60
-6
⎯ ⎯
⎯ ⎯
150
120
100
70
⎯ ⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
DSS60600MZ4
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
⎯ ⎯
⎯
360
⎯ ⎯ V
⎯ ⎯ V
-50
-50 -70
-90 -120
-250
-350
45 60
-1.0 V
-0.9 V
⎯ ⎯
50
300
350
180
170
400
300
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
I
= -100μA
C
V
I
= -10mA
C
V
I
= -100μA
E
nA
μA
= -100V, IE = 0
V
CB
= -100V, IE = 0, TA = 150°C
V
CB
VEB = -6V, IC = 0
V
= -2V, IC = -0.5A
CE
V
= -2V, IC = -1A
CE
⎯
mV
mΩ
= -2V, IC = -2A
CE
= -2V, IC = -6A
CE
I
= -0.1A, IB = -2mA
C
= -1A, IB = -100mA
I
C
= -2A, IB = -200mA
I
C
= -3A, IB = -60mA
I
C
= -6A, IB = -600mA
I
C
= -2A, IB = -200mA
I
C
IC = 1A, IB = -100mA
VCE = -2V, IC = -1A
= -10V, IC = -100mA,
V
CE
MHz
f = 100MHz
pF
VCB = -10V, f = 1MHz
pF
V
= -5V, f = 1MHz
EB
ns
V
= -30V, IC = -750mA,
CC
ns
ns
ns
ns
ns
15mA
I
B1 = -
V
= -30V, IC = -750mA,
CC
= IB2 = -15mA
I
B1
1.6
(mW)
I
1.2
A
DISSI
0.8
10
(A)
EN
1
Pw = 100ms
0.1
Pw = 1ms
Pw = 10ms
LLE
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temperature
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
2 of 5
www.diodes.com
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VO LTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
December 2008
© Diodes Incorporated
C
O
CTO
R CUR
R
T
C CUR
R
N
T GAIN
C
O
CTO
R
T
TER
T
TER TURN-O
OLTAG
T
TER
TURAT
O
O
T
G
CAPACITANC
1.2
1,000
DSS60600MZ4
NEW PRODUCT
1.0
I = -5mA
B
(A)
EN
0.8
0.6
0.4
LLE
C
-I ,
0.2
0
048121620
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 3 Typical Collector Current
I = -4mA
B
I = -3mA
B
I = -2mA
B
I = -1mA
B
vs. Collector-Emitter Voltage
1
I/I = 10
0.1
CB
T = 150°C
A
T = 85°C
A
T = 25°C
T = -55°C
A
A
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
-V ,
T = 150°C
E
100
FE
h, D
V = -2V
CE
10
1 10 100 1,000 10,000 100,000
Fig. 4 Typical DC Current Gain vs. Collector Current
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
-I , COLLECTOR CURRENT (mA)
C
1.2
E (V)
V = -2V
CE
1.0
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
0.001
1 10 100 1,000 10,000 100,000
-I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector- Emitter Saturation Volt age
C
vs. Collector Current
1.2
I = 10
/I
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
CB
E (V)
A
L
N V
I
SA
1.0
0.8
0.6
0.4
BE(ON)
0
-V , BASE-EMI
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Turn-On Volt age
vs. Collector Current
1,000
C
ibo
E (pF)
100
C
obo
f = 1MHz
0.2
0
1 10 100 1,000 10,000 100,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
3 of 5
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December 2008
© Diodes Incorporated
G
T
H P
R
O
UCT
H
1,000
z)
(M
D
100
10
AIN-BANDWID
T
NEW PRODUCT
f,
1
0102030405060708090100
-I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
V = -10V
CE
f = 100MHz
Ordering Information (Note 6)
Part Number Case Packaging
DSS60600MZ4-13 SOT-223 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DSS60600MZ4
Marking Information
ZPS66
Y
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
ZPS66 = Product Type Marking Code
W
W
Package Outline Dimensions
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
A
A1
4 of 5
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SOT-223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
December 2008
© Diodes Incorporated
DSS60600MZ4
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
NEW PRODUCT
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y1
Y2
X2
X1
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
DSS60600MZ4
Document number: DS31589 Rev. 2 - 2
5 of 5
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December 2008
© Diodes Incorporated
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