Features
• Ultra Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
SOT89
Top View
B
Device Schematic Pin-Out Top
DSS5540X
40V LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.055 grams (approximate)
C
E
C
C
B
E
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS5540X-13 ZPS54 13 12mm 2,500
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, please go to our website at http://www.diodes.com
Marking Information
YWW
ZPS54
ZPS54 = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)
DSS5540X
Document number: DS31653 Rev. 2 - 2
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October 2010
© Diodes Incorporated
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Repetitive Peak Pulse Collector Current (Note 4)
Continuous Collector Current
Peak Pulse Base Current
Continuous Base Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
BM
I
B
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C
Power Dissipation (Note 6) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Pulse width ≤ 10ms; Duty cycle ≤ 0.2
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 PCB with 1inch
2
copper pad layout.
2.4
R
R
T
, T
J
DSS5540X
JA
JA
STG
-40 V
-40 V
-6 V
-10 A
-5 A
-4 A
-2 A
-1 A
0.9 W
139 °C/W
2 W
62.5 °C/W
-55 to +150 °C
2.0
N (W)
1.6
1.2
DISSI
Note 6
0.8
D
Note 5
0.4
0
050100150200
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
°
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
DSS5540X
Document number: DS31653 Rev. 2 - 2
D = 0.9
t , PULSE DURATION TIME (s)
1
Fig. 2 Transi ent Thermal Response
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R (t) = r(t) *
θ
JA
R = 135°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
October 2010
© Diodes Incorporated