Features
• Ultra Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
SOT89
Top View
B
Device Schematic Pin-Out Top
DSS5540X
40V LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.055 grams (approximate)
C
E
C
C
B
E
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS5540X-13 ZPS54 13 12mm 2,500
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, please go to our website at http://www.diodes.com
Marking Information
YWW
ZPS54
ZPS54 = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)
DSS5540X
Document number: DS31653 Rev. 2 - 2
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
θ
θ
P, P
OWER
PATIO
T
R
T
T
H
R
R
TANC
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Repetitive Peak Pulse Collector Current (Note 4)
Continuous Collector Current
Peak Pulse Base Current
Continuous Base Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
BM
I
B
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C
Power Dissipation (Note 6) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Pulse width ≤ 10ms; Duty cycle ≤ 0.2
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 PCB with 1inch
2
copper pad layout.
2.4
R
R
T
, T
J
DSS5540X
JA
JA
STG
-40 V
-40 V
-6 V
-10 A
-5 A
-4 A
-2 A
-1 A
0.9 W
139 °C/W
2 W
62.5 °C/W
-55 to +150 °C
2.0
N (W)
1.6
1.2
DISSI
Note 6
0.8
D
Note 5
0.4
0
050100150200
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
°
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
E
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
DSS5540X
Document number: DS31653 Rev. 2 - 2
D = 0.9
t , PULSE DURATION TIME (s)
1
Fig. 2 Transi ent Thermal Response
2 of 5
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R (t) = r(t) *
θ
JA
R = 135°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
October 2010
© Diodes Incorporated
)
)
r
C
O
CTO
R CUR
R
N
T
C
CUR
R
T G
DSS5540X
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
BV
BV
BV
I
I
CBO
CEO
EBO
CBO
EBO
-40
-40
-6
⎯ ⎯
⎯ ⎯
⎯ ⎯
250
DC Current Gain (Note 6)
h
FE
200 350
150
50
⎯ ⎯
⎯ ⎯
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
⎯
⎯
⎯
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Collector Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
R
CE(sat
V
BE(sat)
V
BE(on
f
T
C
c
t
on
t
d
t
t
off
t
s
t
⎯
f
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
60
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100 nA
-50
-100 nA
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
-120
-170
-160
-70
-165
-150
-340
-375
-30 -75
-1.1
-1.2
-1.0 V
⎯ ⎯
105 pF
63
15
48
280
232
48
⎯
⎯
⎯
⎯
⎯
⎯
V
IC = -100μA
V
IC = -10mA
V
IE = -100μA
= -30V, IE = 0
V
CB
μA
= -30V, IE = 0, TA = 150°C
V
CB
VEB = -5V, IC = 0
V
= -2V, IC = -0.5A
CE
= -2V, IC = -1A
V
CE
⎯
mV
mΩ
V
= -2V, IC = -2A
V
CE
= -2V, IC = -5A
V
CE
I
= -0.5A, IB = -5mA
C
= -1A, IB = -10mA
I
C
= -2A, IB = -200mA
I
C
= -4A, IB = -200mA
I
C
= -5A, IB = -500mA
I
C
IC = -5A, IB = -500mA
I
= -4A, IB = -200mA
C
= -5A, IB = -500mA
I
C
VCE = -2V, IC = -2A
MHz
VCE = -10V, IC = -0.1A, f = 100MHz
VCB = -10V, IE = 0A, f = 1MHz
ns
ns
ns
ns
= -10V, IC = -2A,
V
CC
I
= -IB2 = -200mA
B1
ns
ns
2.2
2.0
1.8
(A)
1.6
E
1.4
1.2
1.0
0.8
LLE
0.6
C
I,
0.4
0.2
0
012 345
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = -5mA
B
I = -4mA
B
I = -3mA
B
I = -2mA
B
I = -1mA
B
Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
1,000
V = -1V
CE
800
T = 150°C
A
AIN
T = 125°C
600
EN
400
FE
h, D
200
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
Fig. 4 Typical DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (A)
C
DSS5540X
Document number: DS31653 Rev. 2 - 2
3 of 5
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October 2010
© Diodes Incorporated
C
O
C
T
O
R
T
TER
T
T
R TUR
N
O
N VOLTAG
T
TER
TURATIO
N VOLTAG
CAPACITANC
DSS5540X
1
I/I = 10
CB
1.0
E (V)
V = -2V
CE
0.8
-EMI
0.1
-
0.6
T = -55°C
A
VOLTAGE (V)
T = 150°C
LLE
0.01
SATURATION
CE(SAT)
V,
T = 125°C
A
A
T = -55°C
A
T = 25°C
A
0.001
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
Fig. 5 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Curr ent
1.2
E (V)
I = 10
1.0
/I
CB
T = 85°C
A
E
BE(ON)
V , BASE-EMI
0.4
0.2
0
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.8
T = -55°C
A
0.6
SA
BE(SAT)
V , BASE-EM I
T = 25°C
A
T = 125°C
A
T = 85°C
A
0.4
T = 150°C
0.2
0
0.0001 0.001 0.01 0.1 1 10
A
I , COLLECTOR CURRENT (A)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
E (pF)
100
10
0.1 1 10 100
V , REVERSE VOLT AGE (V)
R
Fig. 8 Typical Capa ci t ance Characteristi cs
C
ibo
C
obo
Package Outline Dimensions
D1
E
B1
B
8
°
e1
(
4
X
)
D
DSS5540X
Document number: DS31653 Rev. 2 - 2
0
0
2
.
0
R
C
SOT89
Dim Min Max
A 1.40 1.60
H
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.43
L
e
D 4.40 4.60
D1 1.52 1.83
E 2.29 2.60
e 1.50 Typ
e1 3.00 Typ
A
H 3.94 4.25
L 0.89 1.20
All Dimensions in mm
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October 2010
© Diodes Incorporated
DSS5540X
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporat ed does not assume an y liabi lity arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorpor ated products in such safety-critical, life
support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
Y3
Y
X (3x)
X1
X2 (2x)
Y2
Dimensions Value (in mm)
X 0.900
X1 1.733
Y1
Y4
C
IMPORTANT NOTICE
LIFE SUPPORT
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
DSS5540X
Document number: DS31653 Rev. 2 - 2
5 of 5
www.diodes.com
October 2010
© Diodes Incorporated
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