Diodes DSS5240Y User Manual
C
C
C
C
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Ultra Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green Device" (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Top View Device Symbol
40V LOW V
DSS5240Y
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
C
B
E
Top View
Pin Out Configuration
E
B
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS5240Y-7 ZP8 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016
Code W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZP8
ZP8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
YM
M = Month (ex: 9 = September)
DSS5240Y
Document number: DS31683 Rev. 2 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
T
R
T
T
H
R
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
I
Base Current (DC)
Peak Base Current
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.8
R
T
, T
J
CBO
CEO
EBO
I
C
CM
I
B
BM
JA
10
STG
DSS5240Y
Pw = 100µs
-40 V
-40 V
-5 V
-2 A
-3 A
-300 mA
-1 A
625 mW
200
-55 to +150
°C/W
°C
(A)
0.6
N (W)
0.4
1
0.1
DISSI
LLE
RC/W
°
0.2
D
0
050100150200
= 200
θ
JA
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Safe Operating Area
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
MAL
E
0.01
ANSIEN
r(t),
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 177°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 100,000
t , PULSE DURA TION TIME (s)
1
Fig. 3 Transient Thermal Response
DSS5240Y
Document number: DS31683 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
Loading...