Diodes DSS5240Y User Manual

C
C
C
C
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free, "Green Device" (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Top View Device Symbol
40V LOW V
DSS5240Y
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
C
B
E
Top View
Pin Out Configuration
E
B
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS5240Y-7 ZP8 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016
Code W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZP8
ZP8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009)
YM
M = Month (ex: 9 = September)
DSS5240Y
Document number: DS31683 Rev. 2 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
θ
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
T
R
T
T
H
R
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
V V
V Collector Current - Continuous Peak Pulse Collector Current
I Base Current (DC) Peak Base Current
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.8
R
T
, T
J
CBO CEO EBO
I
C
CM
I
B
BM
JA
10
STG
DSS5240Y
Pw = 100µs
-40 V
-40 V
-5 V
-2 A
-3 A
-300 mA
-1 A
625 mW 200
-55 to +150
°C/W
°C
(A)
0.6
N (W)
0.4
1
0.1
DISSI
LLE
RC/W
°
0.2
D
0
050100150200
= 200
θ
JA
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Safe Operating Area
1
D = 0.7
E
D = 0.5 D = 0.3
ESIS
MAL E
0.01
ANSIEN
r(t),
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 177°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 100,000 t , PULSE DURA TION TIME (s)
1
Fig. 3 Transient Thermal Response
DSS5240Y
Document number: DS31683 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
)
)
)
r
C
O
C
TOR C
U
R
R
T
C C
URRENT G
DSS5240Y
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
-40
-40
-5
⎯ ⎯
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
Collector Cutoff Current Emitter Cutoff Current
BV BV BV
I
CBO
I
EBO
CBO CEO EBO
300
DC Current Gain (Note 5)
h
FE
260 210 100
⎯ ⎯
Collector-Emitter Saturation Voltage (Note 5)
V
CE(sat)
⎯ ⎯ ⎯ ⎯
Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage (Note 5) Base-Emitter Turn On Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
R
CE(sat
V
BE(sat
V
BE(on
C
obo
f
T
t
on
t
d
t
t
off
t
s
t
f
⎯ ⎯
100 220
⎯ ⎯
⎯ ⎯ ⎯ ⎯
-100
-50
-100 nA
450 380 325 210
-100
-110
-225
-225
-350
-220 m
-1.0 -1.1 V
-0.67 -0.75 V 25 40 pF
73 27 46
237 195
42
V
IC = -100μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -100μA, IC = 0
nA
VCB = -30V, IE = 0
μA
mV
= -30V, IE = 0, TA = 150°C
V
CB
V
= -4V, IC = 0
EB
= -2V, IC = -100mA
V
CE
= -2V, IC = -500mA
V
CE
V
= -2V, IC = -1A
CE
= -2V, IC = -2A
V
CE
= -100mA, IB = -1mA
I
C
= -500mA, IB = -50mA
I
C
IC = -750mA, IB = -15mA IC = -1A, IB = -50mA IC = -2A, IB = -200mA IC = -500mA, IB = -50mA IC = -2A, IB = -200mA V
= -2V, IC = -100mA
CE
VCB = -10V, f = 1.0MHz
MHz
VCE = -10V, IC = -50mA, f = 100MHz ns ns ns ns
= -10V
V
CC
I
= -1A, IB1 = IB2 = -50mA
C
ns ns
(A) EN
LLE
I,
2.0
1.6
I = 5mA
B
I = 4mA
B
1.2
I = 3mA
B
0.8
C
0.4
I = 2mA
B
I = 1mA
B
1,000
900 800 700
AIN
600 500 400
300
FE
h, D
200
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -2V
CE
100
0
0246 810
V , COLLECTOR-EMITTER VO LTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
DSS5240Y
Document number: DS31683 Rev. 2 - 2
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October 2010
© Diodes Incorporated
C
O
CTO
R
T
TER
C
O
CTO
R
T
TER
T
TER
TURATIO
N VOLTAG
T
TER
TURATIO
N VOLTAG
T
T
R TUR
N
O
N VOLT
G
DSS5240Y
1
I/I = 10
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
0.001
CB
0.1
T = 150°C
A
T = 125°C
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
0.0001 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V)
I = 10
1.0
/I
CB
1
I/I = 20
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
0.001
CB
0.1
T = 150°C
T = 125°C
A
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
0.0001 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)
Fig. 7 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V)
I = 20
1.0
/I
CB
0.8
T = -55°C
A
0.6
SA
V , BASE-EMI
T = 25°C
A
T = 85°C
0.4
T = 125°C
T = 150°C
0.2
0
0.0001 0.001 0.01 0.1 1 10
BE(SAT)
A
I , COLLECTOR CURRENT (A)
C
A
A
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1.2
V = 5V
E (V) A
1.0
0.8
-
CE
T = -55°C
A
0.6
E
0.4
0.2
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0.8
T = -55°C
A
0.6
SA
BE(SAT)
V , BASE-EMI
T = 25°C
A
0.4
T = 125°C
T = 150°C
0.2
0
0.0001 0.001 0.01 0.1 1 10
A
I , COLLECTOR CURRENT (A)
C
A
T = 85°C
A
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
BE(ON)
0
V , BASE-EMI
0.0001 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)
C
Fig. 10 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DSS5240Y
Document number: DS31683 Rev. 2 - 2
4 of 6
www.diodes.com
October 2010
© Diodes Incorporated
Package Outline Dimensions
K
J
A
B C
H
D
F
Suggested Pad Layout
G
Z
Y
C2
X
DSS5240Y
SOT-363
Dim Min Max
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
M
L
C2
C1
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
0° 8°
α
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5 G 1.3 X 0.42
Y 0.6 C1 1.9 C2 0.65
DSS5240Y
Document number: DS31683 Rev. 2 - 2
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October 2010
© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DSS5240Y
DSS5240Y
Document number: DS31683 Rev. 2 - 2
6 of 6
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October 2010
© Diodes Incorporated
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