Diodes DSS5240V User Manual

θ

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DSS4240V)

• Low Collector-Emitter Saturation Voltage, V

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Repetitive Collector Current (Note 3) Peak Pulse Collector Current Base Current (DC) Peak Base Current

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

1, 2, 5, 6

654

3

123

-40 V

-5 V

-1.8 A

-2 A

-3 A

-300 mA

-1 A

V V V

I

CRP

I

CBO

CEO

EBO

I

C

CM

I

B

BM

4

DSS5240V

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS5240V

Document number: DS31673 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Operated under pulse conditions: duty cycle ≤ 20%, pulse width tp ≤ 30ms.

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

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R

JA

T

, T

J

STG

600 mW 208

-55 to +150

°C/W

°C

March 2009

(BR)

)

r

P, P

O

R

PATIO

N

C

O

CTO

R CUR

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current Emitter Cutoff Current

V V V

I

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

NEW PRODUCT

Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage

V

CE(SAT)

R

CE(SAT

V

BE(SAT

V

BE(ON

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

CBO

CEO

EBO

CBO

CES

EBO

-40

-5

⎯ ⎯

-40

300 300

h

FE

250 160

50

⎯ ⎯ ⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

⎯

t

off

t

⎯

s

t

f

150

⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

-100

-50

-100 nA

⎯

800

⎯ ⎯ ⎯ ⎯

⎯

-120

-145

⎯

-250

⎯

-530

⎯

250 mΩ

-1.1 V

⎯ ⎯

60 20

40 167 140

27

10

V

IC = -100μA, IE = 0

V

IC = -10mA, IB = 0

V

IE = -100μA, IC = 0

nA

VCB = -40V, IE = 0

μA

V VCE = -40V, VBE = 0 V

⎯

V V

⎯ ⎯ ⎯

⎯

V V V I I

mV

I I IC = -1A, IB = -100mA IC = -1A, IB = -100mA

-1 V

15 pF

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

V

VCB = -10V, f = 1.0MHz

MHz

VCE = -10V, IC = -50mA, f = 100MHz

ns ns ns

V

ns

I ns ns

DSS5240V

= -40V, IE = 0, TA = 150°C

CB

= -5V, IC = 0

EB

= -5V, IC = -1mA

CE

= -5V, IC = -100mA

CE

= -5V, IC = -500mA

CE

= -5V, IC = -1A

CE

= -5V, IC = -2A

CE

= -100mA, IB = -1mA

C

= -500mA, IB = -50mA

C

= -1A, IB = -100mA

C

= -2A, IB = -200mA

C

= -5V, IC = -1A

CE

= -10V

CC

= -1A, IB1 = IB2 = -50mA

C

Pw = 1ms

Pw = 10ms

(mW)

500

(A)

1

400

300

DISSI

200

WE

D

100

R = 208°C/W

θ

JA

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1 Power Dissipation vs.

Ambient Temperature (Note 4)

DSS5240V

Document number: DS31673 Rev. 2 - 2

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0.1

Pw = 100ms

DC

LLE

0.01

C

-I ,

0.001

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 4)

March 2009

C CUR

R

T

G

C

O

CTO

R

T

TER

T

TER TURN-O

OLTAG

T

TER

TURATIO

N VOLTAG

C

PAC

TANC

F

1,200

V = -5V

1,000

AIN

800

EN

600

T = 150°C

A

T = 85°C

A

CE

-EMI

1

I/I = 10

CB

0.1

T = 150°C

A

T = 85°C

VOLTAGE (V)

A

LLE

T = 25°C

400

FE

h, D

200

A

T = -55°C

A

0.01

SATURATION

CE(SAT)

-V ,

T = -55°C

A

T = 25°C

A

DSS5240V

NEW PRODUCT

0

1 10 100 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1,000

1.2

E (V)

V = -5V

CE

T = -55°C

A

T = 25°C

A

T = 85°C

A

N V

1.0

0.8

0.6

0.4

0.2

T = 150°C

A

BE(ON)

0

-V , BASE-EMI

0.1 10 100 1,000 10,000

1

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

200

f = 1MHz

0.001

0.1 1,000

1 10 100 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.2

E (V)

1.0

I = 10

/I

CB

0.8

T = -55°C

A

0.6

SA

-V , BASE-EMI

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

0.2

A

0

0.1 10 100 10,000

BE(SAT)

11,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

160

)

E (p

120

I

80

A

C

ibo

40

C

0

obo

0.1 1 10 100 V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

DSS5240V

Document number: DS31673 Rev. 2 - 2

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March 2009

T

R

T T

HER

R

TANC

Y

1

0.1

0.01

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

E

ESIS

MAL

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , PULSE DURATION TIME (s)

1

Fig. 8 Transient Thermal Response (Note 4)

NEW PRODUCT

Ordering Information (Note 6)

Part Number Case Packaging

DSS5240V-7 SOT-563 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 158°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DSS5240V

R

θθJA

10,0001,000

Marking Information

MZP8

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZP8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)

Package Outline Dimensions

K

DSS5240V

Document number: DS31673 Rev. 2 - 2

A

SOT-563

B

C

Dim Min Max Typ

A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60

D

G

D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60

M

L 0.10 0.30 0.20 M 0.10 0.18 0.11

All Dimensions in mm

H

L

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March 2009

DSS5240V

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

NEW PRODUCT

harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.

G

Z

Y

X

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.2 G 1.2 X 0.375 Y 0.5

C1 1.7 C2 0.5

DSS5240V

Document number: DS31673 Rev. 2 - 2

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March 2009