Diodes DSS5240V User Manual

θ

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DSS4240V)

• Low Collector-Emitter Saturation Voltage, V

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Repetitive Collector Current (Note 3)
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

1, 2, 5, 6

654

3

123

-40 V

-40 V

-5 V

-1.8 A

-2 A

-3 A

-300 mA

-1 A

V
V
V

I

CRP

I

I

CBO

CEO

EBO

I

C

CM

I

B

BM

4

DSS5240V

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS5240V

Document number: DS31673 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Operated under pulse conditions: duty cycle ≤ 20%, pulse width tp ≤ 30ms.

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

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R

JA

T

, T

J

STG

600 mW
208

-55 to +150

°C/W

°C

March 2009

© Diodes Incorporated

(BR)

(BR)

(BR)

)

)

)

r

P, P

O

R

PATIO

N

C

O

CTO

R CUR

RENT

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current
Emitter Cutoff Current

V
V
V

I

I

I

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

NEW PRODUCT

Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage

V

CE(SAT)

R

CE(SAT

V

BE(SAT

V

BE(ON

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

CBO

CEO

EBO

CBO

CES

EBO

-40

-5

⎯ ⎯

⎯ ⎯

⎯ ⎯

-40

300
300

h

FE

250
160

50

⎯
⎯
⎯
⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

⎯

t

off

t

⎯

s

t

f

150

⎯
⎯

⎯

⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

-100

-50

-100 nA

-100 nA

⎯

800

⎯
⎯
⎯
⎯

⎯

-120

-145

⎯

-250

⎯

-530

⎯

250 mΩ

-1.1 V

⎯ ⎯

60
20

40
167
140

27

10

V

IC = -100μA, IE = 0

V

IC = -10mA, IB = 0

V

IE = -100μA, IC = 0

nA

VCB = -40V, IE = 0

μA

V
VCE = -40V, VBE = 0
V

⎯

V
V

⎯
⎯
⎯

⎯

V
V
V
I
I

mV

I
I
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA

-1 V

15 pF

⎯
⎯
⎯
⎯
⎯
⎯

V

VCB = -10V, f = 1.0MHz

MHz

VCE = -10V, IC = -50mA, f = 100MHz

ns
ns
ns

V

ns

I
ns
ns

DSS5240V

= -40V, IE = 0, TA = 150°C

CB

= -5V, IC = 0

EB

= -5V, IC = -1mA

CE

= -5V, IC = -100mA

CE

= -5V, IC = -500mA

CE

= -5V, IC = -1A

CE

= -5V, IC = -2A

CE

= -100mA, IB = -1mA

C

= -500mA, IB = -50mA

C

= -1A, IB = -100mA

C

= -2A, IB = -200mA

C

= -5V, IC = -1A

CE

= -10V

CC

= -1A, IB1 = IB2 = -50mA

C

Pw = 1ms

Pw = 10ms

(mW)

500

(A)

1

400

300

DISSI

200

WE

D

100

R = 208°C/W

θ

JA

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1 Power Dissipation vs.

Ambient Temperature (Note 4)

DSS5240V

Document number: DS31673 Rev. 2 - 2

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0.1

Pw = 100ms

DC

LLE

0.01

C

-I ,

0.001

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 4)

March 2009

© Diodes Incorporated