Diodes DSS5220V User Manual

V

θ

Please click here to visit our online spice models database.

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DSS4220V)

• Low Collector-Emitter Saturation Voltage, V

• High Current Gain (h

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current

) at High IC

FE

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

1, 2, 5, 6

654

3

4

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

123

-20 V

-20 V

-5 V

-2 A

-4 A

-0.3 A

-0.6 A

DSS5220

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS5220V

Document number: DS31660 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

T

1 of 5

www.diodes.com

600 mW

R

JA

, T

J

STG

208

-55 to +150

°C/W

°C

March 2009

© Diodes Incorporated

V

(BR)

(BR)

(BR)

)

)

r

P

P

O

R

PAT

O

N

C

O

C

T

O

R CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Collector Cutoff Current

Emitter Cutoff Current

V
V
V

I

I

I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

V

CE(SAT)

NEW PRODUCT

Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

R

CE(SAT

V

BE(SAT)

V

BE(ON

C

CBO
CEO
EBO

CBO

CES
EBO

-20

-5

⎯ ⎯
⎯ ⎯

⎯ ⎯

-20

220
220

h

FE

220
155

60

⎯
⎯
⎯
⎯
⎯

⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

⎯

t

off

t

⎯

s

t

⎯

f

150

⎯
⎯

⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

-100

-50

-100 nA

-100 nA

⎯
⎯
⎯
⎯

⎯

⎯

-80

⎯

-115

-220

⎯

-210

⎯

-455

⎯

-390

⎯

210 mΩ

-1.1

-1.1

⎯ ⎯

60
20

40
167
140

27

10

V

IC = -100μA, IE = 0

V

IC = -10mA, IB = 0

V

IE = -100μA, IC = 0

nA

VCB = -20V, IE = 0

μA

V
VCE = -20V, VBE = 0
V

⎯

V
V
V
V
V

⎯

⎯

⎯
⎯

⎯

I
I
I

mV

I
I
I
IC = -1A, IB = -100mA
I

V

I

-1 V

20 pF

⎯
⎯
⎯
⎯
⎯
⎯

V

VCB = -10V, f = 1.0MHz

MHz

VCE = -10V, IC = -50mA, f = 100MHz

ns
ns
ns

V

ns

I
ns
ns

DSS5220

= -20V, IE = 0, TA = 150°C

CB

= -5V, IC = 0

EB

= -2V, IC = -1mA

CE

= -2V, IC = -100mA

CE

= -2V, IC = -500mA

CE

= -2V, IC = -1A

CE

= -2V, IC = -2A

CE

= -100mA, IB = -1mA

C

= -500mA, IB = -50mA

C

= -1A, IB = -50mA

C

= -1A, IB = -100mA

C

= -2A, IB = -100mA

C

= -2A, IB = -200mA

C

= -1A, IB = -50mA

C

= -1A, IB = -100mA

C

= -5V, IC = -1A

CE

= -10V

CC

= -1A, IB1 = IB2 = -50mA

C

(mW)
I

500

400

(A)
EN

1

Pw = 10ms

Pw = 1ms

300

DISSI

LLE

WE
,

D

200

100

0

0

R = 208°C/W

θ

JA

25 50

T , AMBIENT TEMPERAT URE (°C)

A

75 100 125

150

0.1

C

-I ,

0.01

0.1 1 10 100

Fig. 1 Power Dissipation vs.

Ambient Tem perature ( No te 3)

DSS5220V

Document number: DS31660 Rev. 2 - 2

2 of 5

www.diodes.com

Pw = 100ms

DC

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

© Diodes Incorporated

March 2009

V

C CUR

RENT G

C

O

CTO

R

T

TER

2

T

TER TUR

N-O

N VOLTAG

T

TER

TURATIO

OLTAG

C

PACITANC

1,000

800

T = 150°C

A

V = -2V

CE

1

I/I = 10

CB

DSS5220

NEW PRODUCT

AIN

T = 85°C

A

600

T = 25°C

A

400

FE

h, D

200

T = -55°C

A

0

110100

-I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1.

E (V)

V = -5V

CE

1.0

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.1

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

-V ,

T = 150°C

A

T = 85°C

A

T = 25°C

T = -55°C

A

A

0.001

10,0001,000

0.1 10,0001,000

Fig. 4 Typical Collector-Emitter Saturation Voltage

110100

-I , COLLECTOR CURRENT (mA)

C

vs. Collector Current

1.2

E (V)

I = 10

/I

CB

1.0

N V

0.8

T = -55°C

A

0.6

SA

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

A

0.2

BE(ON)

0

-V , BASE-EMI
1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

1,000

10,000

f = 1MHz

T = 150°C

0.2

A

0

0.1 1 10 100 10,000

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (mA)

C

1,000

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collecto r Cu r re nt

100

E (pF)

A

10

C

ibo

C

obo

1

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

DSS5220V

Document number: DS31660 Rev. 2 - 2

3 of 5

www.diodes.com

March 2009

© Diodes Incorporated

V

T

R

T T

H

R

R

TANC

1

0.1

0.01

D = 0.7
D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

E

ESIS

MAL
E

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , PULSE DURATION TIME (s)

1

Fig. 8 Transi ent Thermal Respo nse (Note 3)

NEW PRODUCT

Ordering Information (Note 5)

Part Number Case Packaging

DSS5220V-7 SOT-563 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 145°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DSS5220

R

θθJA

10,0001,000

Marking Information

ZP7

YM

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZP7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

Package Outline Dimensions

K

DSS5220V

Document number: DS31660 Rev. 2 - 2

A

SOT-563

B

C

Dim Min Max Typ

A 0.15 0.30 0.20
B 1.10 1.25 1.20

D

G

C 1.55 1.70 1.60
D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60
K 0.55 0.60 0.60

M

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

H

L

4 of 5

www.diodes.com

March 2009

© Diodes Incorporated

V

DSS5220

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

NEW PRODUCT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

G

Z

Y

X

C2

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.2
G 1.2
X 0.375
Y 0.5

C1 1.7
C2 0.5

DSS5220V

Document number: DS31660 Rev. 2 - 2

5 of 5

www.diodes.com

March 2009

© Diodes Incorporated