Diodes DSS5220V User Manual
V
θ
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DSS4220V)
• Low Collector-Emitter Saturation Voltage, V
• High Current Gain (h
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
) at High IC
FE
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
CE(SAT)
Bottom View Device Schematic Pin Out Configuration
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
1, 2, 5, 6
654
3
4
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
123
-20 V
-20 V
-5 V
-2 A
-4 A
-0.3 A
-0.6 A
DSS5220
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS5220V
Document number: DS31660 Rev. 2 - 2
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
T
1 of 5
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600 mW
R
JA
, T
J
STG
208
-55 to +150
°C/W
°C
March 2009
© Diodes Incorporated
V
(BR)
(BR)
(BR)
)
)
r
P
P
O
R
PAT
O
N
C
O
C
T
O
R CUR
R
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
I
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
V
CE(SAT)
NEW PRODUCT
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
600
R
CE(SAT
V
BE(SAT)
V
BE(ON
C
CBO
CEO
EBO
CBO
CES
EBO
-20
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
-20
220
220
h
FE
220
155
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
obo
f
T
t
on
t
d
t
⎯
t
off
t
⎯
s
t
⎯
f
150
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
-100 nA
⎯
⎯
⎯
⎯
⎯
⎯
-80
⎯
-115
-220
⎯
-210
⎯
-455
⎯
-390
⎯
210 mΩ
-1.1
-1.1
⎯ ⎯
60
20
40
167
140
27
10
V
IC = -100μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -100μA, IC = 0
nA
VCB = -20V, IE = 0
μA
V
VCE = -20V, VBE = 0
V
⎯
V
V
V
V
V
⎯
⎯
⎯
⎯
⎯
I
I
I
mV
I
I
I
IC = -1A, IB = -100mA
I
V
I
-1 V
20 pF
⎯
⎯
⎯
⎯
⎯
⎯
V
VCB = -10V, f = 1.0MHz
MHz
VCE = -10V, IC = -50mA, f = 100MHz
ns
ns
ns
V
ns
I
ns
ns
DSS5220
= -20V, IE = 0, TA = 150°C
CB
= -5V, IC = 0
EB
= -2V, IC = -1mA
CE
= -2V, IC = -100mA
CE
= -2V, IC = -500mA
CE
= -2V, IC = -1A
CE
= -2V, IC = -2A
CE
= -100mA, IB = -1mA
C
= -500mA, IB = -50mA
C
= -1A, IB = -50mA
C
= -1A, IB = -100mA
C
= -2A, IB = -100mA
C
= -2A, IB = -200mA
C
= -1A, IB = -50mA
C
= -1A, IB = -100mA
C
= -5V, IC = -1A
CE
= -10V
CC
= -1A, IB1 = IB2 = -50mA
C
(mW)
I
500
400
(A)
EN
1
Pw = 10ms
Pw = 1ms
300
DISSI
LLE
WE
,
D
200
100
0
0
R = 208°C/W
θ
JA
25 50
T , AMBIENT TEMPERAT URE (°C)
A
75 100 125
150
0.1
C
-I ,
0.01
0.1 1 10 100
Fig. 1 Power Dissipation vs.
Ambient Tem perature ( No te 3)
DSS5220V
Document number: DS31660 Rev. 2 - 2
2 of 5
www.diodes.com
Pw = 100ms
DC
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
© Diodes Incorporated
March 2009
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