Diodes DSS5160V User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DSS4160V)
• Low Collector-Emitter Saturation Voltage, V
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
CE(SAT)
Bottom View Device Schematic Pin Out Configuration
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
1, 2, 5, 6
654
3
4
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
123
-80 V
-60 V
-5 V
-1 A
-2 A
-300 mA
-1 A
DSS5160V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS5160V
Document number: DS31670 Rev. 2 - 2
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
T
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600 mW
R
JA
, T
J
STG
208
-55 to +150
°C/W
°C
March 2009
© Diodes Incorporated
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P, P
OWER
PATIO
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TOR
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URR
N
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
I
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
NEW PRODUCT
Output Capacitance
V
CE(SAT)
R
CE(SAT
V
BE(SAT
V
BE(ON
C
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
600
CBO
CEO
EBO
CBO
CES
EBO
-60
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
-80
200
h
FE
150
100
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
obo
f
T
t
on
t
d
t
t
off
t
⎯
s
t
⎯
f
150
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
-100 nA
⎯
⎯
⎯
⎯
-160
-175
⎯
-330
⎯
330 mΩ
-1.1 V
-0.9 V
⎯ ⎯
80
35
45
260
225
35
10
V
IC = -100μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -100μA, IC = 0
nA
VCB = -60V, IE = 0
μA
V
VCE = -60V, VBE = 0
V
⎯
⎯
⎯
⎯
V
V
V
I
mV
I
I
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
V
15 pF
⎯
⎯
⎯
⎯
⎯
⎯
VCB = -10V, f = 1.0MHz
MHz
VCE = -10V, IC = -50mA, f = 100MHz
ns
ns
ns
V
ns
I
ns
ns
DSS5160V
= -60V, IE = 0, TA = 150°C
CB
= -5V, IC = 0
EB
= -5V, IC = -1mA
CE
= -5V, IC = -500mA
CE
= -5V, IC = -1A
CE
= -100mA, IB = -1mA
C
= -500mA, IB = -50mA
C
= -1A, IB = -100mA
C
= -5V, IC = -1A
CE
= -10V
CC
= -0.5A, IB1 = IB2 = -25mA
C
500
(A)
(mW)
400
300
DISSI
200
D
100
R = 208°C/W
θ
JA
0
0
25 50
T , AMBIENT TEMPERA TURE (°C)
A
75 100 125
150
Fig. 1 Power Dissipation vs.
Ambient Tem perature ( No te 3)
DSS5160V
Document number: DS31670 Rev. 2 - 2
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1
E
0.1
Pw = 100ms
DC
LLE
0.01
C
-I ,
0.001
0.1 1 10 100
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Em itt er Voltage (N ot e 3)
Pw = 10ms
Pw = 1ms
March 2009
© Diodes Incorporated
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