Diodes DSS5160T User Manual

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

SOT23

Top View

60V LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(sat)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

C

B

E

Device Symbol Pin-Out Top

B

DSS5160T

C

E

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS5160T-7 ZP9 7 8mm 3,000

Notes: 1. No purposefully added lead.

3. For packaging details, go to our website at http://www.diodes.com

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

Marking Information

DSS5160T

Document number: DS35532 Rev. 1 - 2

ZP9

www.diodes.com

ZP9 = Product Type Marking Code

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January 2012

© Diodes Incorporated

θ

θ

DSS5160T

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range

Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25.

5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Thermal Characteristics

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

P

D

R

JA

R

JA

, T

T

J

STG

-80 V

-60 V

-5 V

-1 A

-2 A

-300 mA

-1 A

725 mW
172

°C/W

79 °C/W

-55 to +150 °C

T

10

V

CE(sat)

Limit

=25°C

amb

15mm x 15mm

1oz FR4

1

100m

DC
1s

10m

100ms

1ms

100µs

1m

Collector Current (A)

C

100µ

- I

0.1 1 10 100

10ms

-VCE Collector-Emitter Voltage (V)

Safe Operating A rea

180

T

=25°C

amb

160
140
120

D=0.5

100

80
60

D=0.2

40
20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/ W)

Pulse Width ( s)

Single Pulse

D=0.05

D=0.1

0.8

0.6

0.4

0.2

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derat ing Curve

Single Pulse

T

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

amb

=25°C

Transient Thermal Impedance

DSS5160T

Document number: DS35532 Rev. 1 - 2

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Pulse Power Dissipation

January 2012

© Diodes Incorporated

)

)

)

r

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current
Emitter-Base Cutoff Current

DC Current Gain (Note 6)

Collector-Emitter Saturation Voltage (Note 6)

Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage

Transition Frequency
Output Capacitance

Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

= 25°C unless otherwise specified

A

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

⎯ ⎯

EBO

h

FE

V

CE(sat)

R

CE(sat

V

BE(sat

V

BE(on

f

T

C

ob

t

on

t

d

t

t

off

t

s

t

f

-80

-60

-5

⎯ ⎯

⎯ ⎯

200
150
100

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

150

⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

-100

-50

-100 nA

⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V

-175

-180

-340
340

-1.1 V

-0.9 V

⎯ ⎯

15 pF
75
35
40

265
230

35

⎯

⎯

⎯

⎯

⎯

⎯

V

IC = -100μA

V

IC = -10mA

V

IE = -100μA

nA

μA

= -20V, IE = 0

V

CB

= -20V, IE = 0, TA = 150°C

V

CB

VEB = -5V, IC = 0
V

= -5V, IC = -1mA

CE

⎯

mV

mΩ

= -5V, IC = -500mA

CE

= -5V, IC = -1A

CE

= -100mA, IB = -1mA

I

C

IC = -500mA, IB = -50mA

= -1A, IB = -100mA

I

C

IE = -1A, IB = -100mA
IC = -1A, IB = -50mA
VCE = -5V, IC = -1A

= -10V, IC = -50mA,

V

MHz

CE

f = 100MHz

VCB = -10V, f = 1MHz
ns
ns
ns

V

= -10V, IC = -0.5A,

CC

ns

= IB2 = -25mA

I

B1

ns
ns

DSS5160T

DSS5160T

Document number: DS35532 Rev. 1 - 2

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C CUR

REN

T

G

N

C

O

C

TOR

T

TER

T

TER TUR

N-O

N VOLTAG

T

TER

TURATIO

OLTAG

C

PACIT

N

C

800

1

DSS5160T

700

600

FE

500

400

300

200

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

AI

h, D

100

0

1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

Fig. 5 Typical DC Current Gain vs. Collector Current

C

1.2

E (V)

V = -5V

CE

1.0

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

V = -5V

CE

I/I = 10

0.1

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

-V ,

0.001

CB

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.1 1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

Fig. 6 Typical Collector-Emitter Saturation Voltage

C

vs. Collecto r Cu r re nt

1.2

E (V)

I = 10

/I

CB

T = -55°C

A

N V

1.0

0.8

0.6

SA

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

0.2

BE(ON)

-V , BASE-EMI

T = 150°C

A

0

0.1 1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 7 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

180

150

f = 1MHz

0.2

A

0

0.1 1 10 100 1,000

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Base-Emitter Saturation Voltage

vs. Collecto r Cu r re nt

120

E (pF)
A

90

A

60

C

ibo

30

C

0

obo

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 9 Typical Capacitance Characteristics

DSS5160T

Document number: DS35532 Rev. 1 - 2

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Package Outline Dimensions

K

J

A

H

F

D

G

Suggested Pad Layout

Y

Z

X

DSS5160T

Dim Min Max Typ

A 0.37 0.51 0.40

C

B

K1

L

E

M

C

B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55
M 0.085 0.18 0.11

α

Dimensions Value (in mm)

SOT23

0° 8° -

All Dimensions in mm

Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35

DSS5160T

Document number: DS35532 Rev. 1 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporat ed does not assume an y liabi lity arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
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out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in

the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to p erfo rm can be re asonabl y expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices­or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorpor ated products in such safety-critical, life
support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DSS5160T

DSS5160T

Document number: DS35532 Rev. 1 - 2

6 of 6

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January 2012

© Diodes Incorporated