θ
θ
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Features
• Complementary PNP Type Available (DSS5540X)
• Ultra Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Repetitive Collector Current (Note 3)
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
R
O
T
C
E
L
L
O
C
2,4
C
1
SE
BA
3
E
T
I
M
T
E
Device Schematic Pin Out Configuration
R
V
CBO
V
CEO
V
EBO
I
C
I
CRM
I
CM
I
B
I
BM
4
E
3
2
C
B
1
40 V
40 V
6 V
4 A
5 A
10 A
1 A
2 A
DSS4540X
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Power Dissipation (Note 5) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS4540X
Document number: DS31592 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Operated under pulsed conditions: pulse width ≤ 10ms; duty cycle ≤ 0.2.
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
T
1 of 4
www.diodes.com
0.9 W
R
JA
139 °C/W
2 W
R
JA
, T
J
STG
62.5 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
r
C
O
CTO
R C
URREN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cut-Off Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
V
V
V
R
CBO
CEO
EBO
I
CBO
I
⎯ ⎯
CES
I
⎯ ⎯
EBO
h
FE
CE(SAT)
CE(SAT
V
BE(SAT)
V
BE(ON
f
T
C
c
t
⎯
on
t
⎯
d
t
⎯
t
⎯
off
t
⎯
s
t
⎯
f
40
40
6
⎯ ⎯
⎯ ⎯
300
300
250
100
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
70
⎯ ⎯
4.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 nA
50
100 nA
100 nA
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
90
120
80 150
160 290
185 355
37 71
1.1
1.2
1.1 V
⎯ ⎯
75 pF
135
60
75
670
570
100
⎯
⎯
⎯
⎯
⎯
⎯
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
= 30V, IE = 0
V
CB
μA
= 30V, IE = 0, TA = 150°C
V
CB
VCE = 30V, VBE = 0V
VEB = 5V, IC = 0
V
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
CE
⎯
mV
mΩ
V
= 2V, IC = 2A
CE
= 2V, IC = 5A
V
CE
I
= 0.5A, IB = 5mA
C
= 1A, IB = 10mA
I
C
= 2A, IB = 200mA
I
C
= 4A, IB = 200mA
I
C
= 5A, IB = 500mA
I
C
IC = 5A, IB = 500mA
I
= 4A, IB = 200mA
C
= 5A, IB = 500mA
I
C
VCE = 2V, IC = 2A
= 10V, IC = 0.1A,
V
MHz
CE
f = 100MHz
V
= 10V, IE = 0A,
CB
f = 1MHz
ns
V
CC
ns
I
B1 =
ns
ns
V
= 10V, IC = 2A,
CC
ns
I
= IB2 = 40mA
B1
ns
= 10V, IC = 2A,
40mA
DSS4540X
3.5
1.6
1.2
Note 5
0.8
D
0.4
P , POWER DIS SIPATION (W)
Note 4
(A)
3.0
2.5
2.0
1.5
LLE
1.0
C
I,
I = 10mA
B
I = 8mA
B
I = 6mA
B
I = 4mA
B
I = 2mA
B
0.5
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature
DSS4540X
Document number: DS31592 Rev. 2 - 2
°
2 of 4
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0
01 2345
V , COLLECTOR-EMITTER VOLTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
December 2008
© Diodes Incorporated
C CUR
REN
T
G
N
C
O
CTO
R
T
TER
2
T
TER TURN-O
OLTAG
T
TER
TURATIO
OLTAG
CAPACITANC
F
G
T
H
P
R
ODU
C
T
H
NEW PRODUCT
800
700
T = 150°C
A
600
V = 2V
CE
AI
T = 85°C
A
500
T = 25°C
400
A
1
I/I = 10
CB
0.1
-EMI
VOLTAGE (V)
T = 150°C
T = 85°C
A
A
LLE
300
FE
h, D
200
T = -55°C
A
0.01
SATURATION
CE(SAT)
V,
DSS4540X
T = 25°C
A
T = -55°C
A
100
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
E (V)
V = 2V
CE
1.0
0.001
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
I = 10
E (V)
/I
CB
1.0
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collecto r Cu r re nt
1,000
f = 1MHz
)
100
E (p
C
ibo
N V
0.8
T = -55°C
A
0.6
T = 25°C
0.4
A
T = 85°C
A
T = 150°C
A
SA
0.2
0
0.001 0.01 0.1 1 10
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
z)
(M
100
10
C
obo
1
0.1 1 10 100
DSS4540X
Document number: DS31592 Rev. 2 - 2
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
3 of 4
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10
AIN-BANDWID
f,
V = 10V
CE
f = 100MHz
T
1
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
December 2008
© Diodes Incorporated
DSS4540X
Ordering Information (Note 7)
Part Number Case Packaging
DSS4540X-13 SOT89-3L 2500/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
NEW PRODUCT
E
B1
8
°
(
4
X
)
YWW
ZNS54
0
0
2
.
D1
B
D
0
R
L
e
A
C
ZNS54 = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
H
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X3
X1
Dimensions Value (in mm)
X1 1.7
Y1
X2 0.9
X3 0.4
Y1 2.7
X2
Y3
C
Y2
Y2 1.3
Y3 1.9
C 3.0
IMPORTANT NOTICE
LIFE SUPPORT
DSS4540X
Document number: DS31592 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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