Diodes DSS4540X User Manual
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Features
• Complementary PNP Type Available (DSS5540X)
• Ultra Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Repetitive Collector Current (Note 3)
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
R
O
T
C
E
L
L
O
C
2,4
C
1
SE
BA
3
E
T
I
M
T
E
Device Schematic Pin Out Configuration
R
V
CBO
V
CEO
V
EBO
I
C
I
CRM
I
CM
I
B
I
BM
4
E
3
2
C
B
1
40 V
40 V
6 V
4 A
5 A
10 A
1 A
2 A
DSS4540X
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Power Dissipation (Note 5) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS4540X
Document number: DS31592 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Operated under pulsed conditions: pulse width ≤ 10ms; duty cycle ≤ 0.2.
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
T
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0.9 W
R
JA
139 °C/W
2 W
R
JA
, T
J
STG
62.5 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
r
C
O
CTO
R C
URREN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cut-Off Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
V
V
V
R
CBO
CEO
EBO
I
CBO
I
⎯ ⎯
CES
I
⎯ ⎯
EBO
h
FE
CE(SAT)
CE(SAT
V
BE(SAT)
V
BE(ON
f
T
C
c
t
⎯
on
t
⎯
d
t
⎯
t
⎯
off
t
⎯
s
t
⎯
f
40
40
6
⎯ ⎯
⎯ ⎯
300
300
250
100
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
70
⎯ ⎯
4.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 nA
50
100 nA
100 nA
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
90
120
80 150
160 290
185 355
37 71
1.1
1.2
1.1 V
⎯ ⎯
75 pF
135
60
75
670
570
100
⎯
⎯
⎯
⎯
⎯
⎯
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
= 30V, IE = 0
V
CB
μA
= 30V, IE = 0, TA = 150°C
V
CB
VCE = 30V, VBE = 0V
VEB = 5V, IC = 0
V
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
CE
⎯
mV
mΩ
V
= 2V, IC = 2A
CE
= 2V, IC = 5A
V
CE
I
= 0.5A, IB = 5mA
C
= 1A, IB = 10mA
I
C
= 2A, IB = 200mA
I
C
= 4A, IB = 200mA
I
C
= 5A, IB = 500mA
I
C
IC = 5A, IB = 500mA
I
= 4A, IB = 200mA
C
= 5A, IB = 500mA
I
C
VCE = 2V, IC = 2A
= 10V, IC = 0.1A,
V
MHz
CE
f = 100MHz
V
= 10V, IE = 0A,
CB
f = 1MHz
ns
V
CC
ns
I
B1 =
ns
ns
V
= 10V, IC = 2A,
CC
ns
I
= IB2 = 40mA
B1
ns
= 10V, IC = 2A,
40mA
DSS4540X
3.5
1.6
1.2
Note 5
0.8
D
0.4
P , POWER DIS SIPATION (W)
Note 4
(A)
3.0
2.5
2.0
1.5
LLE
1.0
C
I,
I = 10mA
B
I = 8mA
B
I = 6mA
B
I = 4mA
B
I = 2mA
B
0.5
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature
DSS4540X
Document number: DS31592 Rev. 2 - 2
°
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0
01 2345
V , COLLECTOR-EMITTER VOLTAG E (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
December 2008
© Diodes Incorporated
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