θ
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Features
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• Complimentary PNP Type Available (DSS5320T)
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Repetitive Peak Pulse Current (Note 3)
Continuous Collector Current
Base Current
= 25°C unless otherwise specified
A
Top View
DSS4320T
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
B
E
20 V
20 V
5 V
5 A
3 A
2 A
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Operated under pulse conditions: Pulse width ≤ 100ms, duty cycle ≤ 0.25.
4. Device mounted on FR-4 PCB; with minimum recommended pad layout.
R
T
, T
J
JA
STG
600 mW
209 °C/W
-55 to +150 °C
DSS4320T
Document number: DS31621 Rev. 2 - 2
1 of 5
www.diodes.com
November 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
C
O
C
T
O
R
C
U
R
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
800
I
CBO
I
⎯ ⎯
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(SAT)
R
CE(SAT
V
BE(SAT)
V
BE(ON
f
T
C
ob
⎯ ⎯
⎯ ⎯
20
20
5
220
220
220
200
150
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
100
⎯ ⎯
10
100
50
100 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
70
120
230
70 210
310
35 105
1.1 V
1.2 V
1.2 V
⎯ ⎯
35 pF
nA
μA
= 20V, IE = 0
V
CB
= 20V, IE = 0, TA = 150°C
V
CB
VEB = 5V, IC = 0
V
I
= 100μA
C
V
I
= 10mA
C
V
I
= 100μA
E
V
= 2V, IC = 0.1A
CE
= 2V, IC = 0.5A
CE
⎯
mV
mΩ
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 2V, IC = 3A
V
CE
= 0.5A, IB = 50mA
I
C
= 1A, IB = 50mA
I
C
= 2A, IB = 40mA
I
C
= 2A, IB = 200mA
I
C
= 3A, IB = 300mA
I
C
= 2A, IB = 200mA
I
E
= 2A, IB = 40mA
I
C
= 3A, IB = 300mA
I
C
VCE = 2V, IC = 1A
= 5V, IC = 100mA,
V
CE
MHz
f = 100MHz
VCB = 10V, f = 1MHz
DSS4320T
700
600
(A)
1
Pw = 100ms
Pw = 10ms
500
400
300
200
D
P , POWER DISSIPATION (W)
100
R = 209°C/W
θ
JA
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
DC
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS4320T
Document number: DS31621 Rev. 2 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated
C
O
C
TOR C
URREN
T
C
C
U
R
RENT G
C
O
CTO
R
T
TER
T
TER TURN-O
OLTAG
T
TER
T
U
RATIO
OLT
G
CAPACITANC
NEW PRODUCT
DSS4320T
1.8
1.6
1.4
(A)
1.2
I = 5mA
B
I = 4mA
B
1.0
I = 3mA
0.8
0.6
LLE
0.4
C
I,
0.2
0
012345
V , COLLECTOR -EMITTER VOLTAGE ( V)
CE
B
I = 2mA
B
I = 1mA
B
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 10
CB
1,000
T = 150°C
A
T = 85°C
A
AIN
T = 25°C
A
T = -55°C
A
100
FE
h, D
10
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
C
1.2
E (V)
1.0
V = 2V
CE
V = 2V
CE
-EMI
VOLT AGE (V)
LLE
0.01
SATURA T ION
CE(SAT)
V,
0.001
1.2
E (V)
A
1.0
N V
0.8
0.6
SA
0.4
0.2
0.1
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
I = 10
/I
CB
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Turn-On V oltag e
vs. Collector Current
1,000
f = 1MHz
100
C
E (pF)
10
ibo
C
obo
0
1 10 100 1,000 10,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
DSS4320T
Document number: DS31621 Rev. 2 - 2
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November 2008
© Diodes Incorporated
GAIN
N
T
H P
R
O
UCT
H
T
R
T T
HER
R
TANC
NEW PRODUCT
DSS4320T
1,000
z)
(M
100
D
DWID
10
-BA
V = 5V
CE
T
f,
f = 100MHz
1
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 190°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 10 Transient Thermal Response
Ordering Information (Note 6)
Part Number Case Packaging
DSS4320T-7 SOT-23 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN4
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DSS4320T
Document number: DS31621 Rev. 2 - 2
ZN4 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
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© Diodes Incorporated
DSS4320T
Package Outline Dimensions
K
J
A
Dim Min Max Typ
A 0.37 0.51 0.40
C
B
H
K1
F
D
G
L
M
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
SOT-23
0° 8° -
All Dimensions in mm
Suggested Pad Layout
NEW PRODUCT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
DSS4320T
Document number: DS31621 Rev. 2 - 2
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November 2008
© Diodes Incorporated
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