Diodes DSS4320T User Manual
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Features
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• Complimentary PNP Type Available (DSS5320T)
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Repetitive Peak Pulse Current (Note 3)
Continuous Collector Current
Base Current
= 25°C unless otherwise specified
A
Top View
DSS4320T
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
B
E
20 V
20 V
5 V
5 A
3 A
2 A
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Operated under pulse conditions: Pulse width ≤ 100ms, duty cycle ≤ 0.25.
4. Device mounted on FR-4 PCB; with minimum recommended pad layout.
R
T
, T
J
JA
STG
600 mW
209 °C/W
-55 to +150 °C
DSS4320T
Document number: DS31621 Rev. 2 - 2
1 of 5
www.diodes.com
November 2008
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
C
O
C
T
O
R
C
U
R
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
800
I
CBO
I
⎯ ⎯
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(SAT)
R
CE(SAT
V
BE(SAT)
V
BE(ON
f
T
C
ob
⎯ ⎯
⎯ ⎯
20
20
5
220
220
220
200
150
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
100
⎯ ⎯
10
100
50
100 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
70
120
230
70 210
310
35 105
1.1 V
1.2 V
1.2 V
⎯ ⎯
35 pF
nA
μA
= 20V, IE = 0
V
CB
= 20V, IE = 0, TA = 150°C
V
CB
VEB = 5V, IC = 0
V
I
= 100μA
C
V
I
= 10mA
C
V
I
= 100μA
E
V
= 2V, IC = 0.1A
CE
= 2V, IC = 0.5A
CE
⎯
mV
mΩ
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 2V, IC = 3A
V
CE
= 0.5A, IB = 50mA
I
C
= 1A, IB = 50mA
I
C
= 2A, IB = 40mA
I
C
= 2A, IB = 200mA
I
C
= 3A, IB = 300mA
I
C
= 2A, IB = 200mA
I
E
= 2A, IB = 40mA
I
C
= 3A, IB = 300mA
I
C
VCE = 2V, IC = 1A
= 5V, IC = 100mA,
V
CE
MHz
f = 100MHz
VCB = 10V, f = 1MHz
DSS4320T
700
600
(A)
1
Pw = 100ms
Pw = 10ms
500
400
300
200
D
P , POWER DISSIPATION (W)
100
R = 209°C/W
θ
JA
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.1
LLE
0.01
C
I,
0.001
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
DC
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS4320T
Document number: DS31621 Rev. 2 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated