Diodes DSS4240Y User Manual
CCB
CCE
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (DSS5240Y)
• Ultra Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
• Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
SOT363
Top View
40V LOW V
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
• Weight: 0.006 grams (approximate)
C
B
E
Top View
Device Schematic
DSS4240Y
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
UL Flammability Classification Rating 94V-0
42 leadframe. Solderable per MIL-STD-202, Method 208
Top View
Pin Out Configuration
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS4240Y-7 ZN8 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DSS4240Y
Document number: DS31682 Rev. 2 - 2
ZN8
YM
www.diodes.com
ZN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
1 of 5
March 2011
© Diodes Incorporated
θ
P, P
OWER
PATIO
C
O
CTO
R CUR
REN
T
T
R
T T
HER
R
T
C
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0.8
R
, T
T
J
100
CBO
CEO
EBO
I
C
CM
BM
JA
STG
DSS4240Y
40 V
40 V
5 V
2 A
3 A
0.3 A
625 mW
200
-55 to +150
°C/W
°C
ADVANCE INFORMATION
10
0.6
N (W)
(A)
1
0.4
DISSI
0.1
LLE
RC/W
°
0.2
D
0
050100150200
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
= 200
θ
JA
T , AMBIENT TEMPERATURE ( C)
A
°
C
I,
0.01
0.001
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Safe Operating Area
1
D = 0.7
E
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.9
t , PULSE DURATION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 180°C/W
JA
P(pk)
t
1
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
Fig. 3 Transient Therm al Response
DSS4240Y
Document number: DS31682 Rev. 2 - 2
2 of 5
www.diodes.com
Pw = 100µs
R
θθJA
t
2
1,000
March 2011
© Diodes Incorporated
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