Diodes DSS4240V User Manual

θ

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Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DSS5240V)

• Low Collector-Emitter Saturation Voltage, V

• Surface Mount Package Suited for Automated Assembly

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current

Top View

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

LOW V

NPN SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

CE(SAT)

Bottom View Device Schematic Pin Out Configuration

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.003 grams (approximate)

654

123

40 V
40 V

5 V
2 A
3 A

300 mA

1 A

3

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

1, 2, 5, 6

4

DSS4240V

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DSS4240V

Document number: DS31672 Rev. 2 - 2

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

T

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600 mW

R

JA

, T

J

STG

208

-55 to +150

°C/W

°C

March 2009

© Diodes Incorporated

(BR)

(BR)

(BR)

)

)

)

r

P

P

O

R

PATIO

N

C

O

C

T

O

R CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage

Collector Cutoff Current

V
V
V

I

Collector Cutoff Current
Emitter Cutoff Current

I

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage

NEW PRODUCT

Base-Emitter Turn On Voltage

V

CE(SAT)

R

CE(SAT

V

BE(SAT

V

BE(ON

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

600

40

CBO

I

CES
EBO

CBO
CEO
EBO

40

5

⎯ ⎯
⎯ ⎯

⎯ ⎯

300

FE

200

300

h

75

⎯

⎯

⎯

⎯
⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

obo

f

T

t

on

t

d

t

t

off

t

⎯

s

t

⎯

f

150

⎯
⎯
⎯

⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯

⎯ ⎯

70
20

50
310
270

40

10

V

IC = 100μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 100μA, IC = 0

nA

100

50
100 nA
100 nA

⎯

900

⎯

⎯

75
100
190
400

190 mΩ

1.2 V

1.1 V

10 pF

⎯
⎯
⎯
⎯
⎯
⎯

VCB = 40V, IE = 0

μA

V
VCE = 40V, VEB = 0
V

V
V

⎯

V
V
I
I

mV

I
I
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
V

VCB = 10V, f = 1.0MHz

MHz

VCE = 10V, IC = 50mA, f = 100MHz

ns
ns
ns

V

ns

I
ns
ns

DSS4240V

= 40V, IE = 0, TA = 150°C

CB

= 5V, IC = 0

EB

= 5V, IC = 1mA

CE

= 5V, IC = 500mA

CE

= 5V, IC = 1A

CE

= 5V, IC = 2A

CE

= 100mA, IB = 1mA

C

= 500mA, IB = 50mA

C

= 1A, IB = 100mA

C

= 2A, IB = 200mA

C

= 5V, IC = 1A

CE

= 10V, IC = 1A,

CC

= IB2 = 50mA

B1

Pw = 10ms

Pw = 1ms

March 2009

© Diodes Incorporated

500

(A)

(mW)

400

300

DISSI

200

WE
,

D

100

R = 208°C/W

θ

JA

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1 Power Dissipation vs.

Ambient Tem perature ( No te 3)

DSS4240V

Document number: DS31672 Rev. 2 - 2

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1

EN

0.1

Pw = 100ms

DC

LLE

0.01

C

I,

0.001

0.1 1 10 100
V , COLLECTOR-EMITTER VOLT AGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

C C

U

R

R

N

T

G

N

C

O

C

T

O

R

T

TER

2

T

TER TURN-O

OLTAG

T

TER

TURATIO

OLTAG

CAPACITANC

F

1,200

1,000

AI

800

E

600

400

FE

h, D

200

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V = 5V

CE

-EMI

VOLTAGE (V)

LLE

0.01

SATURATION

CE(SAT)

V,

0.1

1

I/I = 10

CB

T = 150°C

A

T = 85°C

A

DSS4240V

T = 25°C

A

T = -55°C

A

NEW PRODUCT

0

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1,000

1.

E (V)

N V

1.0

0.8

V = 5V

CE

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.2

T = 150°C

A

BE(ON)

0

V , BASE-EMI

0.1 10 100 1,000 10,000

1

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collecto r Cu r re nt

180

0.001

0.1 1,000

1 10 100 10,000

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Curr ent

1.2

E (V)

N V

1.0

0.8

I = 10

T = -55°C

A

/I

CB

0.6

SA

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

0.2

A

0

0.1 10 100 10,000

BE(SAT)

V , BASE-EMI

11,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

150

f = 1MHz

)

120

E (p

90

60

C

ibo

30

C

0

obo

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

DSS4240V

Document number: DS31672 Rev. 2 - 2

3 of 5

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March 2009

© Diodes Incorporated

T

R

T T

HER

R

TANC

Y

1

0.1

0.01

D = 0.7
D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

E

ESIS

MAL

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , PULSE DURA TION TIME (s)

1

Fig. 8 Transient Thermal Response (Note 3)

NEW PRODUCT

Ordering Information (Note 6)

Part Number Case Packaging

DSS4240V-7 SOT-563 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 180°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DSS4240V

R

θθJA

1,000

Marking Information

ZN8

M

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

Package Outline Dimensions

K

DSS4240V

Document number: DS31672 Rev. 2 - 2

A

SOT-563

B

C

Dim Min Max Typ

A 0.15 0.30 0.20
B 1.10 1.25 1.20

D

G

C 1.55 1.70 1.60
D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60
K 0.55 0.60 0.60

M

L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

H

L

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March 2009

© Diodes Incorporated

DSS4240V

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

NEW PRODUCT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

G

Z

Y

X

C2

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 2.2
G 1.2
X 0.375

Y 0.5
C1 1.7
C2 0.5

DSS4240V

Document number: DS31672 Rev. 2 - 2

5 of 5

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March 2009

© Diodes Incorporated