Diodes DSS4240T User Manual

Features
Ideal for Medium Power Amplification and Switching
Ultra Low Collector-Emitter Saturation Voltage
Complimentary NPN Type Available (DSS5240T)
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
SOT23
Top view
40V LOW V
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, "Green” Molding Compound. UL
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Weight: 0.008 grams (approximate)
Device symbol
NPN SURFACE MOUNT TRANSISTOR
CE(sat)
Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
Top View
Pin Configuration
DSS4240T
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS4240T-7 ZN2 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc‘s “Green” Policy can be found on our website at https://www.diodes.com/
3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZN2
ZN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010)
YM
M = Month (ex: 9 = September)
DSS4240T
Document number: DS31623 Rev. 4 - 2
1 of 5
www.diodes.com
November 2011
© Diodes Incorporated
θ
θ
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)
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Peak Base Current
Thermal Characteristics @T
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4) Thermal Resistance, Junction to Lead (Note 5) Operating and Storage Temperature Range
= 25°C unless otherwise specified
A
DSS4240T
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
BM
P
D
R
JA
R
JC
, T
T
J
STG
40 V 40 V
5 V 3 A 2 A
0.3 A
600 mW 209 °C/W
74.95 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current Emitter-Base Cutoff Current
BV BV BV
I
CBO
I
EBO
CBO CEO EBO
40 40
5
⎯ ⎯ ⎯ ⎯
⎯ ⎯
100
50
100 nA
V
IC = 100μA
V
IC = 10mA
V
IE = 100μA
nA
V
CB
μA
V
CB
VEB = 4V, IC = 0
= 30V, IE = 0 = 30V, IE = 0, TA = 150°C
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage
h
FE
V
CE(sat)
R
CE(sat
V
BE(sat
V
BE(on
350 300 300 150
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ V ⎯ ⎯ V
V
70
30 100
180
mV 180 320
60 200
mΩ
1.1 V
0.75 V
= 2V, IC = 0.1A
V
CE
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
I
= 100mA, IB = 1mA
C
IC = 500mA, IB = 50mA IC = 750mA, IB = 15mA IC = 1A, IB = 50mA IC = 2A, IB = 200mA
= 500mA, IB = 50mA
I
C
IC = 2A, IB = 200mA VCE = 2V, IC = 100mA
SMALL SIGNAL CHARACTERISTICS
V
= 10V, IC = 100mA,
Transition Frequency Output Capacitance
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
DSS4240T
Document number: DS31623 Rev. 4 - 2
f
T
C
ob
www.diodes.com
100
2 of 5
20 pF
CE
MHz
f = 100MHz VCB = 10V, f = 1MHz
November 2011
© Diodes Incorporated
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