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DSS4220V
User Manual
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Diodes DSS4220V User Manual

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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DSS5220V)
• Low Collector-Emitter Saturation Voltage, V
• High Current Gain (h
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
Maximum Ratings @T
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Peak Base Current
) at High IC
FE
Top View
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
CE(SAT)
Bottom View Device Schematic Pin Out Configuration
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
654
123
20 V 20 V
5 V 2 A 4 A
0.3 A
0.6 A
3
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
1, 2, 5, 6
4
DSS4220V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DSS4220V
Document number: DS31659 Rev. 2 - 2
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
T
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600 mW
R
JA
, T
J
STG
208
-55 to +150
°C/W
°C
March 2009
© Diodes Incorporated
Page 2
(BR)
(BR)
(BR)
)
)
r
P
P
O
R
PAT
O
N
C
O
C
T
O
R C
U
R
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage
Collector Cutoff Current Collector Cutoff Current
Emitter Cutoff Current
V V V
I
I
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
V
CE(SAT)
Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
600
R
CE(SAT
V
BE(SAT)
V
BE(ON
C
CBO CEO EBO
CBO
CES EBO
20
5
⎯ ⎯ ⎯ ⎯
⎯ ⎯
20
220 220
h
FE
220 200 120
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
obo
f
⎯
T
t
on
t
d
t
⎯
t
⎯
off
t
⎯
s
t
⎯
f
⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯
⎯
⎯ ⎯ ⎯ ⎯
16
260
60 20
40 225 205
20
10
V
IC = 100μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100μA, IC = 0
nA
100
50 100 nA 100 nA
⎯
⎯
⎯ ⎯
⎯
55
95 180 175 355 350
175 mΩ
1.1
1.2
1.1 V
⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
VCB = 20V, IE = 0
μA
V VCE = 20V, VBE = 0 V
V V V
⎯
V V I I I
mV
I I I IC = 1A, IB = 100mA I
V
I V
pF
VCB = 10V, f = 1.0MHz
MHz
VCE = 10V, IC = 50mA, f = 100MHz
ns ns ns
V
ns
I ns ns
DSS4220V
= 20V, IE = 0, TA = 150°C
CB
= 5V, IC = 0
EB
= 2V, IC = 1mA
CE
= 2V, IC = 100mA
CE
= 2V, IC = 500mA
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 100mA, IB = 1mA
C
= 500mA, IB = 50mA
C
= 1A, IB = 50mA
C
= 1A, IB = 100mA
C
= 2A, IB = 100mA
C
= 2A, IB = 200mA
C
= 1A, IB = 50mA
C
= 1A, IB = 100mA
C
= 5V, IC = 1A
CE
= 10V
CC
= 1A, IB1 = IB2 = 50mA
C
500
Pw = 1ms
(A)
(mW) I
400
1
Pw = 10ms
300
DISSI WE
,
D
200
100
0
0
R = 208°C/W
θ
JA
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
0.1
LLE
C
I,
0.01
0.1 1 10 100
Fig. 1 Power Dissipation vs.
Ambient Tem perature ( No te 3)
DSS4220V
Document number: DS31659 Rev. 2 - 2
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Pw = 100ms
DC
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Em it t er Voltage (Not e 3)
© Diodes Incorporated
March 2009
Page 3
C CUR
R
T
G
C
O
CTO
R
T
TER
2
T
TER TURN-O
OLTAG
T
TER
TURATIO
N VOLTAG
CAP
C
T
C
1,200
1
DSS4220V
1,000
AIN
800
T = 150°C
A
T = 85°C
A
V = 2V
EN
600
T = 25°C
A
400
FE
T = -55°C
h, D
A
200
0
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1,000
1.
E (V)
V = 5V
CE
T = -55°C
A
T = 25°C
A
T = 85°C
A
N V
1.0
0.8
0.6
0.4
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
0.1 10 100 1,000 10,000
1
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Curr ent
1,000
CE
f = 1MHz
-EMI
VOLTAGE (V)
LLE
0.01
SATURATION
CE(SAT)
V,
0.1
I/I = 10
CB
T = 150°C
A
T = 85°C
A
T = 25°C
T = -55°C
A
A
0.001
0.1 1,000
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collecto r Cu r re nt
1.2
E (V)
I = 10
/I
CB
1.0
0.8
T = -55°C
A
0.6
T = 25°C
SA
0.4
0.2
A
T = 85°C
A
T = 150°C
A
0
0.1 10 100 10,000
BE(SAT)
V , BASE-EMI
11,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
E (pF) AN
I
C
ibo
A
10
C
obo
1
0.1 1 10 100 V , REVERSE VOLT AGE (V)
R
Fig. 7 Typical Capacitance Characteristics
DSS4220V
Document number: DS31659 Rev. 2 - 2
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March 2009
© Diodes Incorporated
Page 4
T
R
T
T
HER
R
TANC
1
E
ESIS
MAL
ANSIEN
r(t),
0.1
0.01
D = 0.7 D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 166°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , PULSE DURATION TIME (s)
1
Fig. 8 Transi ent Thermal Response (Note 3)
DSS4220V
Ordering Information (Note 6)
Part Number Case Packaging
DSS4220V-7 SOT-563 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN7
YM
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZN7 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
Package Outline Dimensions
K
DSS4220V
Document number: DS31659 Rev. 2 - 2
A
SOT-563
B
C
Dim Min Max Typ
A 0.15 0.30 0.20 B 1.10 1.25 1.20
D
G
C 1.55 1.70 1.60 D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60 K 0.55 0.60 0.60
M
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
H
L
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March 2009
© Diodes Incorporated
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DSS4220V
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.2 G 1.2 X 0.375 Y 0.5
C1 1.7 C2 0.5
DSS4220V
Document number: DS31659 Rev. 2 - 2
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March 2009
© Diodes Incorporated
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